Datasheet
BCV63_63B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 4 August 2010 4 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
7. Characteristics
[1] Group selection will be done on TR1. Due to matched dies, h
FE
values for TR2 are the same as for TR1.
[2] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[3] V
BE
decreases by about 2 mV/K with increasing temperature.
Table 8. Characteristics
T
j
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
=30V; I
E
=0A - - 15 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 C
--5A
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA;
I
B
=0.5mA
-75300mV
V
BEsat
base-emitter
saturation voltage
I
C
=10mA;
I
B
=0.5mA
[2]
- 700 - mV
Transistor TR1
h
FE
DC current gain V
CE
=5V; I
C
=2mA
BCV63 110 - 800
BCV63B 200 - 450
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA; I
B
= 5 mA - 250 650 mV
V
BEsat
base-emitter
saturation voltage
I
C
=100mA; I
B
=5mA
[2]
- 850 - mV
V
BE
base-emitter voltage I
C
=2mA; V
CE
=5V
[3]
600 650 750 mV
I
C
=10mA; V
CE
=5V
[3]
--820mV
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f=100MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A; f=1MHz
-4-pF
Transistor TR2
h
FE
DC current gain V
CE
=700mV;
I
C
=2mA
[1]
BCV63 110 - 800
BCV63B 200 - 450
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA; I
B
= 5 mA - 250 - mV
V
BE
base-emitter voltage I
C
=2mA;
V
CE
=700mV
[3]
- 700 - mV