Datasheet

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 4 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
[1]
- −700 - mV
I
C
= −100 mA;
I
B
= −5mA
[1]
- −850 - mV
V
BE
base-emitter voltage I
C
= −2mA; V
CE
= −5V
[2]
−600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5V
[2]
--−820 mV
f
T
transition frequency V
CE
= −5V;
I
C
= −10 mA;
f=100MHz
100 - - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A
-4.5-pF
NF noise figure V
CE
= −5V;
I
C
= −200 μA; R
S
=2kΩ;
f = 1 kHz; B = 200 Hz
--10dB
Transistor TR2
V
EBS
emitter-base voltage V
CB
=0V; I
E
= −250 mA - - −1.5 V
V
CB
=0V; I
E
= −10 μA −400--mV
h
FE
DC current gain V
CE
= −5V; I
C
= −2mA
BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800
Transistors TR1 and TR2
I
C1
/I
E2
current matching I
E2
= −0.5 mA;
V
CE1
= −5V;
T
amb
≤ 25 °C 0.7 - 1.3
T
amb
≤ 150 °C 0.7 - 1.3
I
E2
emitter current 2 V
CE1
= −5V
[3]
--−5mA
Table 8. Characteristics
…continued
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit