Datasheet

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 3 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −30 V
V
CEO
collector-emitter voltage open base - −30 V
V
EBS
emitter-base voltage V
CE
=0V - −6V
I
C
collector current - −100 mA
I
CM
peak collector current - −200 mA
I
BM
peak base current - −200 mA
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 500 K/W
Table 8. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR1
I
CBO
collector-base
cut-off current
V
CB
= −30 V; I
E
=0A - - −15 nA
V
CB
= −30 V; I
E
=0A;
T
j
= 150 °C
--−5 μA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V;
I
C
= −100 μA
100 - -
V
CE
= −5V; I
C
= −2 mA 100 - 800
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −75 −300 mV
I
C
= −100 mA;
I
B
= −5mA
- −250 −650 mV