Datasheet

BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 2 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Table 3. Ordering information
Type number Package
Name Description Version
BCV61 - plastic surface-mounted package; 4 leads SOT143B
BCV61A
BCV61B
BCV61C
Table 4. Marking codes
Type number Marking code
[1]
BCV61 1M*
BCV61A 1J*
BCV61B 1K*
BCV61C 1L*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 30 V
V
CEO
collector-emitter voltage open base - 30 V
V
EBS
emitter-base voltage V
CE
=0V - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current - 200 mA
I
BM
peak base current - 200 mA
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C