Datasheet

BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 4 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
Transistor TR2
V
EBS
emitter-base voltage V
CB
=0V;
I
E
= −250 mA
--−1.8 V
V
CB
=0V;
I
E
= −10 μA
−400--mV
h
FE
DC current gain V
CE
=5V;
I
C
=2mA
BCV61 110 - 800
BCV61A 110 - 220
BCV61B 200 - 450
BCV61C 420 - 800
Transistors TR1 and TR2
I
C1
/I
E2
current matching I
E2
= −0.5 mA;
V
CE1
=5V
T
amb
≤ 25 °C 0.7 - 1.3
T
amb
≤ 150 °C 0.7 - 1.3
I
E2
emitter current 2 V
CE1
=5V
[3]
--−5mA
Table 7. Characteristics
…continued
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit