Datasheet

2004 Dec 06 4
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV29; BCV49
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current
BCV29 I
E
= 0 A; V
CB
= 30 V − − 100 nA
BCV49 I
E
= 0 A; V
CB
= 60 V − − 100 nA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= 10 V − − 100 nA
h
FE
DC current gain V
CE
= 5 V; see Fig.2
BCV29 I
C
= 1 mA 4 000 − −
I
C
= 10 mA 10 000 − −
I
C
= 100 mA 20 000 − −
I
C
= 500 mA 4 000 − −
DC current gain V
CE
= 5 V; see Fig.2
BCV49 I
C
= 1 mA 2 000 − −
I
C
= 10 mA 4 000 − −
I
C
= 100 mA 10 000 − −
I
C
= 500 mA 2 000 − −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA − − 1 V
V
BEsat
base-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA − − 1.5 V
V
BEon
base-emitter on-state voltage I
C
= 10 mA; V
CE
= 5 V − − 1.4 V
f
T
transition frequency I
C
= 30 mA; V
CE
= 5 V; f = 100 MHz − 220 − MHz