Datasheet

2004 Jan 13 4
NXP Semiconductors Product data sheet
PNP Darlington transistors BCV26; BCV46
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
BCV26 I
E
= 0; V
CB
= −30 V − − −100 nA
BCV46 I
E
= 0; V
CB
= −60 V − − −100 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −10 V − − −100 nA
h
FE
DC current gain I
C
= −1 mA; V
CE
= −5 V; (see Fig.2)
BCV26 4 000 − −
BCV46 2 000 − −
DC current gain I
C
= −10 mA; V
CE
= −5 V; (see Fig.2)
BCV26 10 000 − −
BCV46 4 000 − −
DC current gain I
C
= −100 mA; V
CE
= −5 V; (see Fig.2)
BCV26 20 000 − −
BCV46 10 000 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −100 mA; I
B
= −0.1 mA − − −1 V
V
BEsat
base-emitter saturation voltage I
C
= −100 mA; I
B
= −0.1 mA − − −1.5 V
V
BEon
base-emitter on-state voltage I
C
= −10 mA; V
CE
= −5 V − − −1.4 V
f
T
transition frequency I
C
= −30 mA; V
CE
= −5 V; f = 100 MHz − 220 − MHz
Fig.2 DC current gain; typical values.
V
CE
= −2 V.
handbook, full pagewidth
0
100000
20000
40000
60000
80000
h
FE
MGD836
−1 −10
I
C
(mA)
−10
2
−10
3