Datasheet

1999 Apr 08 3
Philips Semiconductors Product specification
PNP medium power transistor BCP69
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 91 K/W
R
th j-s
thermal resistance from junction to soldering point 10 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −25 V −−−100 nA
I
E
= 0; V
CB
= −25 V; T
j
= 150 °C −−−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5V −−−100 nA
h
FE
DC current gain I
C
= −5 mA; V
CE
= −10 V 50 −−
I
C
=−500 mA; V
CE
= −1 V; see Fig.2 85 − 375
I
C
= −1 A; V
CE
= −1 V; see Fig.2 60 −−
DC current gain I
C
= −500 mA; V
CE
= −1 V; see Fig.2
BCP69-16 100 − 250
BCP69-25 160 − 375
V
CEsat
collector-emitter saturation voltage I
C
= −1 A; I
B
= −100 mA −−−500 mV
V
BE
base-emitter voltage I
C
= −5 mA; V
CE
= −10 V −−620 − mV
I
C
= −1 A; V
CE
= −1V −−−1V
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= −5 V; f = 1 MHz − 48 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V; f = 100 MHz 40 −−MHz
DC current gain ratio of the
complementary pairs
I
C
 = 0.5 A; V
CE
 =1V −−1.6
h
FE1
h
FE2
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