Datasheet

BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 15 of 24
NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
V
CE
= 1V
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 55 C
T
amb
=25C
Fig 19. h
FE
selection -25: DC current gain as a
function of collector current; typical values
Fig 20. h
FE
selection -25: collector current as a
function of collector-emitter voltage; typical
values
V
CE
= 1V
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 100 C
I
C
/I
B
=10
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 55 C
Fig 21. h
FE
selection -25: base-emitter voltage as a
function of collector current; typical values
Fig 22. h
FE
selection -25: collector-emitter saturation
voltage as a function of collector current;
typical values
006aac707
200
100
300
400
h
FE
0
I
C
(A)
-10
-4
-10-1-10
-3
-10
-1
-10
-2
(1)
(2)
(3)
006aab404
0
I
C
(A)
V
CE
(V)
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0
−1 −5
−2 −3 −4
I
B
(mA) = −12.0
−10.8
−2.4
−3.6
−4.8
−6.0
−1.2
−9.6
−8.4
−7.2
006aac708
-0.4
-0.8
-1.2
V
BE
(V)
0.0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
006aac709
–10
–1
–10
–2
–1
V
CEsat
(V)
–10
–3
I
C
(mA)
–10
–1
–10
4
–10
3
–1 –10
2
–10
(1)
(2)
(3)