Datasheet

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 4 of 15
NXP Semiconductors
BCM857BV/BS/DS
PNP/PNP matched double transistors
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT666
[1][2]
- - 416 K/W
SOT363
[1]
- - 416 K/W
SOT457
[1]
- - 328 K/W
Table 7. Thermal characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= −30 V;
I
E
=0A
--−15 nA
V
CB
= −30 V;
I
E
=0A;
T
j
= 150 °C
--−5 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5V;
I
C
=0A
--−100 nA
h
FE
DC current gain V
CE
= −5V;
I
C
= −10 µA
- 250 -
V
CE
= −5V;
I
C
= −2mA
200 290 450
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −50 −200 mV
I
C
= −100 mA;
I
B
= −5mA
- −200 −400 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
[1]
- −760 - mV
I
C
= −100 mA;
I
B
= −5mA
[1]
- −920 - mV
V
BE
base-emitter voltage V
CE
= −5V;
I
C
= −2mA
[2]
−600 −650 −700 mV
V
CE
= −5V;
I
C
= −10 mA
[2]
--−760 mV
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=1MHz
- - 2.2 pF
C
e
emitter capacitance V
EB
= −0.5 V;
I
C
=i
c
=0A;
f=1MHz
-10-pF