Datasheet

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 7 of 15
NXP Semiconductors
BCM857BV/BS/DS
PNP/PNP matched double transistors
V
CE
= −5 V; T
amb
=25°CV
CE
= −5 V; T
amb
=25°C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Transition frequency as a function of collector
current; typical values
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values
Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
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−0.6
−0.8
−1
V
BE
(V)
−0.4
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
I
C
(mA)
−1 −10
2
−10
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10
2
10
3
f
T
(MHz)
10
V
CB
(V)
0 −10−8−4 −6−2
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4
2
6
8
C
c
(pF)
0
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V
EB
(V)
0 −6−4−2
9
11
7
13
15
C
e
(pF)
5