Datasheet

BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 3 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT666
[1][2]
- 200 mW
SOT363
[1]
- 200 mW
SOT457
[1]
- 250 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT666
[1][2]
- 300 mW
SOT363
[1]
- 300 mW
SOT457
[1]
- 380 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT666
[1][2]
- - 625 K/W
SOT363
[1]
- - 625 K/W
SOT457
[1]
- - 500 K/W