Datasheet
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 5 of 13
NXP Semiconductors
BCM62B
PNP/PNP matched double transistor
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Per transistor TR2
V
EBS
emitter-base voltage V
CB
=0V;
I
E
= 250 mA
- - 1.5 V
V
CB
=0V;
I
E
=10µA
400 - - mV
Per device
I
C1
/I
E2
current matching V
CE1
= −5V;
I
E2
= 0.5 mA;
T
amb
≤ 25 °C
[3]
1 1.1 1.2
V
CE1
= −5V;
I
E2
= 0.5 mA;
T
amb
≤ 150 °C
[3]
1.02 - 1.22
V
CE1
= −3V;
I
E2
= 0.5 mA;
T
amb
≤ 25 °C
[3]
0.95 1.05 1.15
V
CE1
= −1V;
I
E2
= 0.5 mA;
T
amb
≤ 25 °C
[3]
0.9 1 1.1
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit