Datasheet

BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 4 of 13
NXP Semiconductors
BCM62B
PNP/PNP matched double transistor
7. Characteristics
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor TR1
I
CBO
collector-base cut-off
current
V
CB
= −30 V;
I
E
=0A
--−15 nA
V
CB
= −30 V;
I
E
=0A;
T
j
= 150 °C
--−5 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5V;
I
C
=0A
--−100 nA
h
FE
DC current gain V
CE
= −5V;
I
C
= −10 µA
- 250 -
V
CE
= −5V;
I
C
= −100 µA
100 - -
V
CE
= −5V;
I
C
= −2mA
200 290 450
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −50 −200 mV
I
C
= −100 mA;
I
B
= −5mA
- −200 −400 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −10 mA;
I
B
= −0.5 mA
[1]
- −760 - mV
I
C
= −100 mA;
I
B
= −5mA
[1]
- −920 - mV
V
BE
base-emitter voltage V
CE
= −5V;
I
C
= −2mA
[2]
−600 −650 −700 mV
V
CE
= −5V;
I
C
= −10 mA
[2]
--−760 mV
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=1MHz
- - 2.2 pF
C
e
emitter capacitance V
EB
= −0.5 V;
I
C
=i
c
=0A;
f=1MHz
-10-pF
f
T
transition frequency V
CE
= −5V;
I
C
= −10 mA;
f = 100 MHz
100 175 - MHz
NF noise figure V
CE
= −5V;
I
C
= −0.2 mA;
R
S
=2kΩ;
f = 10 Hz to
15.7 kHz
- 1.6 - dB
V
CE
= −5V;
I
C
= −0.2 mA;
R
S
=2kΩ;
f = 1 kHz;
B = 200 Hz
- 3.1 - dB