Datasheet
BCM61B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 5 of 13
NXP Semiconductors
BCM61B
NPN/NPN matched double transistor
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Per transistor TR2
V
EBS
emitter-base voltage V
CB
=0V;
I
E
= −250 mA
--−1.8 V
V
CB
=0V;
I
E
= −10 µA
−400 - - mV
Per device
I
C1
/I
E2
current matching V
CE1
=5V;
I
E2
= −0.5 mA;
T
amb
≤ 25 °C
[3]
0.92 1.02 1.12
V
CE1
=5V;
I
E2
= −0.5 mA;
T
amb
≤ 150 °C
[3]
0.93 - 1.13
V
CE1
=3V;
I
E2
= −0.5 mA;
T
amb
≤ 25 °C
[3]
0.91 1.01 1.11
V
CE1
=1V;
I
E2
= −0.5 mA;
T
amb
≤ 25 °C
[3]
0.9 1 1.1
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit