Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

1

2

3

4

5

6

7

8

9

BCM61B_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 4 of 13

NXP Semiconductors

BCM61B

NPN/NPN matched double transistor

7. Characteristics

Table 7. Characteristics

T

amb

=25

°

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Per transistor TR1

I

CBO

collector-base cut-off

current

V

CB

=30V;

I

E

=0A

- - 15 nA

V

CB

=30V;

I

E

=0A;

T

j

= 150 °C

--5µA

I

EBO

emitter-base cut-off

current

V

EB

=5V; I

C

= 0 A - - 100 nA

h

FE

DC current gain V

CE

=5V;

I

C

=10µA

- 250 -

V

CE

=5V;

I

C

= 100 µA

100 - -

V

CE

=5V;

I

C

=2mA

200 290 450

V

CEsat

collector-emitter

saturation voltage

I

C

= 10 mA;

I

B

= 0.5 mA

- 50 200 mV

I

C

= 100 mA;

I

B

=5mA

- 200 400 mV

V

BEsat

base-emitter saturation

voltage

I

C

= 10 mA;

I

B

= 0.5 mA

[1]

- 760 - mV

I

C

= 100 mA;

I

B

=5mA

[1]

- 910 - mV

V

BE

base-emitter voltage V

CE

=5V;

I

C

=2mA

[2]

610 660 710 mV

V

CE

=5V;

I

C

=10mA

[2]

- - 770 mV

C

c

collector capacitance V

CB

=10V;

I

E

=i

e

=0A;

f=1MHz

- - 1.5 pF

C

e

emitter capacitance V

EB

= 0.5 V;

I

C

=i

c

=0A;

f=1MHz

-11-pF

f

T

transition frequency V

CE

=5V;

I

C

= 10 mA;

f = 100 MHz

100 250 - MHz

NF noise ﬁgure V

CE

=5V;

I

C

= 0.2 mA;

R

S

=2kΩ;

f = 10 Hz to

15.7 kHz

- 2.8 - dB

V

CE

=5V;

I

C

= 0.2 mA;

R

S

=2kΩ;

f = 1 kHz;

B = 200 Hz

- 3.3 - dB