Datasheet

BCM61B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 3 of 13
NXP Semiconductors
BCM61B
NPN/NPN matched double transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor TR1
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
Per transistor
V
EBS
emitter-base voltage V
CB
=0V - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 220 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 390 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 568 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 321 K/W