Datasheet

BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 13 of 24
NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
7. Characteristics
[1] Pulse test: t
p
 300 s;  = 0.02.
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 25 V; I
E
=0A - - 100 nA
V
CB
= 25 V; I
E
=0A;
T
j
= 150 C
--10 A
I
EBO
emitter-base cut-off
current
V
EB
= 5V; I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 10 V
I
C
= 5mA 50 - -
DC current gain V
CE
= 1V
I
C
= 500 mA
[1]
85 - 375
I
C
= 1A
[1]
60 - -
I
C
= 2A
[1]
40 - -
DC current gain V
CE
= 1V
h
FE
selection -16 I
C
= 500 mA
[1]
100 - 250
h
FE
selection -25 I
C
= 500 mA
[1]
160 - 375
V
CEsat
collector-emitter
saturation voltage
I
C
= 1A; I
B
= 100 mA
[1]
--0.5 V
I
C
= 2A; I
B
= 200 mA
[1]
0.6 V
V
BE
base-emitter voltage V
CE
= 10 V; I
C
= 5mA
[1]
--0.7 V
V
CE
= 1V; I
C
= 1A
[1]
--1V
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
=0A;
f=1MHz
-28-pF
f
T
transition frequency V
CE
= 5V; I
C
= 50 mA;
f=100MHz
40 140 - MHz