Datasheet

1999 Apr 12 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859W; BC860W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN
complements: BC849W and BC850W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC859W 4D∗ BC860W 4H∗
BC859BW 4B∗ BC860BW 4F∗
BC859CW 4C∗ BC860CW 4G∗
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC859W − −30 V
BC860W − −50 V
V
CEO
collector-emitter voltage open base
BC859W − −30 V
BC860W − −45 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C