Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsN/A PNP PNP

1

2

3

4

5

6

7

BC 856W ... BC 860W

Semiconductor Group 3

Electrical Characteristics

at T

A = 25 ˚C, unless otherwise specified.

VCollector-emitter breakdown voltage

I

C = 10 mA BC 856W

BC 857W, BC 860W

BC 858W, BC 859W

V

(BR)CE0

65

45

30

–

–

–

–

–

–

nA

µA

Collector cutoff current

V

CB = 30 V

V

CB = 30 V, TA = 150 ˚C

I

CB0

–

–

–

–

15

5

UnitValuesParameter Symbol

min. typ. max.

DC characteristics

Collector-base breakdown voltage

I

C = 10 µA BC 856W

BC 857W, BC 860W

BC 858W, BC 859W

V

(BR)CB0

80

50

30

–

–

–

–

–

–

Emitter-base breakdown voltage

I

E = 1 µA

V

(BR)EB0 5––

mV

Collector-emitter saturation voltage

1)

I

C = 10 mA, IB = 0.5 mA

I

C = 100 mA, IB = 5 mA

V

CEsat

–

–

75

250

300

650

–DC current gain

I

C = 10 µA, VCE = 5 V

BC 856 AW … BC 859 AW

BC 856 BW … BC 860 BW

BC 857 CW … BC 860 CW

I

C = 2 mA, VCE = 5 V

BC 856 AW … BC 859 AW

BC 856 BW … BC 860 BW

BC 857 CW … BC 860 CW

h

FE

–

–

–

125

220

420

140

250

480

180

290

520

–

–

–

250

475

800

Base-emitter saturation voltage

1)

I

C = 10 mA, IB = 0.5 mA

I

C = 100 mA, IB = 5 mA

V

BEsat

–

–

700

850

–

–

Collector-emitter breakdown voltage

I

C = 10 µA, VBE = 0 BC 856W

BC 857W, BC 860W

BC 858W, BC 859W

V

(BR)CES

80

50

30

–

–

–

–

–

–

Base-emitter voltage

I

C = 2 mA, VCE = 5 V

I

C = 10 mA, VCE = 5 V

V

BE(on)

600

–

650

–

750

820

1)

Pulse test: t ≤ 300 µs, D = 2 %.