Datasheet

BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 4 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
[2] V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
[3] V
BE
decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
=0A - - 15 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--5μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
E
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
=10μA-150-
V
CE
=5V; I
C
=2mA
BC848B 200 290 450
BC848W 110 - 800
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
= 0.5 mA - 90 250 mV
I
C
= 100 mA; I
B
=5mA
[1]
- 200 600 mV
V
BEsat
base-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA
[2]
-700- mV
I
C
= 100 mA; I
B
=5mA
[2]
-900- mV
V
BE
base-emitter voltage I
C
=2mA; V
CE
=5V
[3]
580 660 700 mV
I
C
=10mA; V
CE
=5V
[3]
- - 770 mV
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-2.53pF
NF noise figure V
CE
=5V; I
C
=200μA;
R
S
=2kΩ; f = 1 kHz;
B=200Hz
- 2 10 dB