Datasheet

2001 Sep 10 4
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC847BV
CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 30 V − − 15 nA
I
E
= 0; V
CB
= 30 V; T
j
= 150 °C − − 5 μA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 5 V − − 100 nA
h
FE
DC current gain I
C
= 2 mA; V
CE
= 5 V 200 − 450
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V 580 655 700 mV
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA − − 100 mV
I
C
= 100 mA; I
B
= 5 mA; note 1 − − 300 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − 755 − mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − − 1.5 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 500 mV;f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 − − MHz
handbook, full pagewidth
0
300
100
200
MBH724
10
−2
10
−1
h
FE
1
I
C
(mA)
10 10
3
10
2
V
CE
= 5 V
Fig.2 DC current gain; typical values.