Datasheet

BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 5 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
=0A --15nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--5µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
= 2 mA 200 - 450
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 100 mV
I
C
= 100 mA; I
B
=5mA
[1]
- - 300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - 755 - mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
=5V
TR1 (NPN) 580 655 700 mV
TR2 (PNP) 600 655 750 mV
C
c
collector capacitance I
E
=i
e
= 0 A; V
CB
=10V;
f=1MHz
TR1 (NPN) - - 1.5 pF
TR2 (PNP) - - 2.2 pF
C
e
emitter capacitance I
C
=i
c
= 0 A; V
EB
= 0.5 V;
f=1MHz
TR1 (NPN) - 11 - pF
TR2 (PNP) - 10 - pF
f
T
transition frequency I
C
= 10 mA; V
CE
=5V;
f = 100 MHz
100 - - MHz