Datasheet

BC847XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 5 March 2012 5 of 14
NXP Semiconductors
BC847xMB series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
=30V; I
E
=0A - - 15 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 C
--5A
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
=2mA
BC847AMB 110 - 220
BC847BMB 200 - 450
BC847CMB 420 - 800
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
= 0.5 mA - 90 200 mV
I
C
= 100 mA; I
B
=5mA
[1]
- 200 400 mV
V
BEsat
base-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA - 700 - mV
I
C
= 100 mA; I
B
=5mA
[1]
-900- mV
V
BE
base-emitter voltage I
C
=2mA; V
CE
= 5 V 580 660 700 mV
I
C
=10mA; V
CE
= 5 V - - 770 mV
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
--1.5pF
C
e
emitter capacitance V
EB
=0.5V; I
C
=i
c
=0A;
f=1MHz
-11- pF
NF noise figure I
C
= 200 A; V
CE
=5V;
R
S
=2k; f = 1 kHz;
B=200Hz
- 2 10 dB