Datasheet
BC847XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 5 March 2012 3 of 14
NXP Semiconductors
BC847xMB series
45 V, 100 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
-200mA
I
BM
peak base current single pulse;
t
p
1ms
-100mA
P
tot
total power dissipation T
amb
25 C
[1][2]
-250mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 55 +150 C
T
stg
storage temperature 65 +150 C