Datasheet

2002 Nov 22 6
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC817DPN
handbook, halfpage
0
400
600
200
300
500
100
MHC324
−10
−1
−1 −10
h
FE
−10
2
I
C
(mA)
−10
3
(1)
(2)
(3)
Fig.6 DC current gain as a function of collector
current; typical values.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
TR2 (PNP) V
CE
= −1 V.
handbook, halfpage
0 −10
V
CE
(V)
−1000
0
−200
−400
−600
−800
−2
I
C
(mA)
−4 −6 −8
MHC325
(10)
(6)
(5)
(4)
(1)
(2)
(3)
(9)
(8)
(7)
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −7 mA.
(2) I
B
= −6.3 mA.
(3) I
B
= −5.6 mA.
(4) I
B
= −4.9 mA.
(5) I
B
= −4.2 mA.
(6) I
B
= −3.5 mA.
(7) I
B
= −2.8 mA.
(8) I
B
= −2.1 mA.
(9) I
B
= −1.4 mA.
(10) I
B
= −0.7 mA.
TR2 (PNP)