Datasheet

2002 Nov 22 4
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC817DPN
handbook, halfpage
0
500
100
200
300
400
MBL747
10
−1
11010
2
I
C
(mA)
h
FE
10
3
(3)
(1)
(2)
Fig.2 DC current gain as a function of collector
current; typical values.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
TR1 (NPN) V
CE
= 1 V.
handbook, halfpage
010
1000
0
200
400
600
800
2468
V
CE
(V)
I
C
(mA)
MBL748
(1) (2) (3) (4) (5)
(6)
(7)
(8)
(9)
(10)
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 15 mA.
(2) I
B
= 13.5 mA.
(3) I
B
= 12 mA.
(4) I
B
= 10.5 mA.
(5) I
B
= 9 mA.
(6) I
B
= 7.5 mA.
(7) I
B
= 6 mA.
(8) I
B
= 4.5 mA.
(9) I
B
= 3 mA.
(10) I
B
= 1.5 mA.
TR1 (NPN)