Datasheet

2002 Nov 22 2
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC817DPN
FEATURES
• High current (500 mA)
• 600 mW total power dissipation
• Replaces two SOT23 packaged transistors on same
PCB
area.
APPLICATIONS
• General purpose switching and amplification
• Complementary driver
• Half and full bridge driver.
DESCRIPTION
NPN/PNP transistor pair in a SOT457 (SC-74) plastic
package.
MARKING
TYPE NUMBER MARKING CODE
BC817DPN N4
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
MAM445
132
TR1
TR2
6
4
5
Top view
123
654
Fig.1 Simplified outline (SOT457) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 45 V
I
C
collector current (DC) 500 mA
I
CM
peak collector current 1 A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 45 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 1 A
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 370 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 600 mW