DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DPN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2002 Aug 09 2002 Nov 22
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor FEATURES BC817DPN QUICK REFERENCE DATA • High current (500 mA) SYMBOL • 600 mW total power dissipation VCEO collector-emitter voltage 45 V IC collector current (DC) 500 mA ICM peak collector current 1 A • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS PARAMETER MAX. UNIT PINNING • General purpose switching and amplification PIN • Complementary driver • Half and full bridge driver.
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to note 1 ambient VALUE UNIT 208 K/W Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN MBL747 500 MBL748 1000 IC handbook, halfpage handbook, halfpage hFE (mA) 800 (1) 400 (1) (2) (3) (4) (5) (6) (7) (8) 600 300 (9) (2) 400 200 (10) (3) 200 100 0 10−1 1 10 102 0 103 2 0 4 6 IC (mA) 8 10 VCE (V) TR1 (NPN) TR1 (NPN) VCE = 1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.2 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN MBL749 103 handbook, halfpage MBL750 1200 VBE (mV) handbook, halfpage 1000 VCEsat (mV) (1) 800 (2) 102 600 (1) (3) 400 (2) (3) 10 10−1 1 10 102 200 10−1 103 1 IC (mA) TR1 (NPN) IC/IB = 10. TR1 (NPN) VCE = 1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN MHC324 600 hFE (1) 500 MHC325 −1000 IC (mA) handbook, halfpage handbook, halfpage (1) (2) (3) −800 (4) (5) 400 (6) −600 300 (7) (2) (8) −400 (9) 200 (3) −200 100 0 −10−1 −1 −10 −102 (10) 0 −103 IC (mA) −2 0 −4 −6 −8 −10 VCE (V) TR2 (PNP) TR2 (PNP) VCE = −1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN MHC326 −103 handbook, halfpage MHC327 −1200 VBE (mV) handbook, halfpage VCEsat (mV) −1000 −102 −800 (1) (2) (2) −600 (3) −10 (1) −400 −1 −10−1 −1 −10 −102 (3) −200 −10−1 −103 IC (mA) −1 TR2 (PNP) IC/IB = 10. TR2 (PNP) VCE = −1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.
NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
