Datasheet

74HC_HCT541 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 15 April 2014 9 of 19
NXP Semiconductors
74HC541; 74HTC541
Octal buffer/line driver; 3-state
[1] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
[2] t
t
is the same as t
THL
and t
TLH
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W):
P
D
=C
PD
 V
CC
2
 f
i
 N+ (C
L
 V
CC
2
 f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
 (C
L
 V
CC
2
 f
o
) = sum of outputs.
t
t
transition time see Figure 6
[2]
V
CC
= 2.0 V - 14 60 75 90 ns
V
CC
= 4.5 V - 5 12 15 18 ns
V
CC
= 6.0 V - 4 10 13 15 ns
C
PD
power dissipation
capacitance
per package;
V
I
=GNDtoV
CC
[3]
-37- - - pF
74HCT541
t
pd
propagation delay An to Yn; see Figure 6
[1]
V
CC
= 4.5 V - 15 28 35 42 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - ns
t
en
enable time OEn to Yn; see Figure 7
[1]
V
CC
= 4.5 V - 21 35 44 53 ns
t
dis
disable time OEn to Yn; see Figure 7
[1]
V
CC
= 4.5 V - 21 35 44 53 ns
t
t
transition time V
CC
= 4.5 V; see Figure 6
[2]
- 5 12 15 18 ns
C
PD
power dissipation
capacitance
per package;
V
I
=GNDtoV
CC
 1.5 V
[3]
-39- - - pF
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for test circuit, see Figure 8.
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Max (85 C) Max (125 C)