Datasheet

1997 Nov 25 11
Philips Semiconductors Product specification
Phase-locked-loop with VCO 74HC/HCT4046A
VCO section
Voltages are referenced to GND (ground = 0 V)
R
I
input resistance
SIG
IN
, COMP
IN
800 kΩ 3.0 V
I
at self-bias
operating point;
∆ V
I
= 0.5 V;
see Figs 12, 13
and 14
250 kΩ 4.5
150 kΩ 6.0
SYM-
BOL
PARAMETER
T
amb
(°C)
UNIT
TEST CONDITIONS
74HC V
CC
(V)
V
I
OTHER
+25 −40 to +85 −40 to +125
min. typ. max. min. max. min. max.
V
IH
HIGH level
input voltage
INH
2.1 1.7 2.1 2.1 V 3.0
3.15 2.4 3.15 3.15 4.5
4.2 3.2 4.2 4.2 6.0
V
IL
LOW level
input voltage
INH
1.3 0.9 0.9 0.9 V 3.0
2.1 1.35 1.35 1.35 4.5
2.8 1.8 1.8 1.8 6.0
V
OH
HIGH level
output voltage
VCO
OUT
2.9 3.0 2.9 2.9 V 3.0 V
IH
or
V
IL
−I
O
=20µA
4.4 4.5 4.4 4.4 4.5 −I
O
=20µA
5.9 6.0 5.9 5.9 6.0 −I
O
=20µA
V
OH
HIGH level
output voltage
VCO
OUT
3.98 4.32 3.84 3.7 V 4.5 V
IH
or
V
IL
−I
O
= 4.0 mA
5.48 5.81 5.34 5.2 6.0 −I
O
= 5.2 mA
V
OL
LOW level
output voltage
VCO
OUT
0 0.1 0.1 0.1 V 3.0 V
IH
or
V
IL
I
O
=20µA
0 0.1 0.1 0.1 4.5 I
O
=20µA
0 0.1 0.1 0.1 6.0 I
O
=20µA
V
OL
LOW level
output voltage
VCO
OUT
0.15 0.26 0.33 0.4 V 4.5 V
IH
or
V
IL
I
O
= 4.0 mA
0.16 0.26 0.33 0.4 6.0 I
O
= 5.2 mA
V
OL
LOW level output
voltage C1
A
,C1
B
0.40 0.47 0.54 V 4.5 V
IH
or
V
IL
I
O
= 4.0 mA
0.40 0.47 0.54 6.0 I
O
= 5.2 mA
±I
I
input leakage
current
INH, VCO
IN
0.1 1.0 1.0 µA 6.0 V
CC
or
GND
R1 resistor range 3.0 300 kΩ 3.0 note 1
3.0 300 4.5
3.0 300 6.0
SYM-
BOL
PARAMETER
T
amb
(°C)
UNIT
TEST CONDITIONS
74HC V
CC
(V)
V
I
OTHER
+25 −40 to +85 −40 to +125
min. typ. max. min. max. min. max.