Datasheet

74HC_HCT132 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 3 — 30 August 2012 6 of 20
NXP Semiconductors
74HC132; 74HCT132
Quad 2-input NAND Schmitt trigger
11. Dynamic characteristics
[1] t
pd
is the same as t
PHL
and t
PLH
.
[2] t
t
is the same as t
THL
and t
TLH
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W):
P
D
=C
PD
 V
CC
2
 f
i
 N+ (C
L
 V
CC
2
 f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
 (C
L
 V
CC
2
 f
o
) = sum of outputs.
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see Figure 6.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
74HC132
t
pd
propagation delay nA, nB to nY; see Figure 5
[1]
V
CC
= 2.0 V - 36 125 155 190 ns
V
CC
= 4.5 V - 13 25 31 38 ns
V
CC
= 5.0 V; C
L
=15pF - 11 - - - ns
V
CC
= 6.0 V - 10 21 26 32 ns
t
t
transition time see Figure 5
[2]
V
CC
= 2.0 V - 19 75 95 110 ns
V
CC
= 4.5 V - 7 15 19 22 ns
V
CC
= 6.0 V - 6 13 16 19 ns
C
PD
power dissipation
capacitance
per package; V
I
=GNDtoV
CC
[3]
-24- - -pF
74HCT132
t
pd
propagation delay nA, nB to nY; see Figure 5
[1]
V
CC
= 4.5 V - 20 33 41 50 ns
V
CC
= 5.0 V; C
L
=15pF - 17 - - - ns
t
t
transition time V
CC
= 4.5 V; see Figure 5
[2]
- 7 15 19 22 ns
C
PD
power dissipation
capacitance
per package;
V
I
=GNDtoV
CC
 1.5 V
[3]
-20- - -pF