Datasheet

Electrical Characteristics: (T
C
= +25°C unless otherwise noted.)
Parameter
Symbol Min Typ Max Unit
Peak Forward Blocking Voltage, (T
J
= +125°C)
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
V
DRM
50
200
400
600
800
−
−
−
−
−
−
−
−
−
−
V
Peak Forward or Reverse Blocking Current,
(Rated V
DRM
or V
RRM
)T
J
= +25°C
T
J
= +125°C
I
DRM
, I
RRM
−
−
−
−
10
2
μA
mA
Forward “ON” Voltage, (I
TM
= 50A, Note 2) V
TM
− − 1.8 V
Gate Trigger Current (Continuous DC), T
C
= +25°C
(Anode Voltage = 12Vdc, R
L
= 100Ω) T
C
= −40°C
I
GT
−
−
−
25
40
75
mA
Gate Trigger Voltage (Continuous DC)
(Anode Voltage = 12Vdc, R
L
= 100Ω, T
C
= −40°C)
V
GT
− 1 1.5 V
Gate Non−Trigger Voltage
(Anode Voltage = Rated V
DRM
, R
L
=100Ω, T
J
= +125°C)
V
GD
0.2 − − V
Holding Current
(Anode Voltage = 12Vdc, T
C
= −40°C)
I
H
− 35 40 mA
Turn−On Time
(I
TM
= 25A, I
GT
= 50mAdc)
t
gt
− 1.5 2 μs
Turn−Off Time (V
DRM
= rated voltage)
(I
TM
=25A, I
R
= 25A)
(I
TM
=25A, I
R
= 25A, T
J
= +125°C)
t
q
−
−
15
35
−
−
μs
Critical Rate of Rise of Off−State Voltage
(Gate Open, Rated V
DRM
, Exponential Waveform)
dv/dt − 50 − V/μs
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
Anode/Tab
Gate
.147 (3.75)
Dia Max