Datasheet

Electrical Characteristics: (T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V
(BR)GSS
I
G
= –1.0µA, V
DS
= 0 –30 – – V
Gate Reverse Current I
GSS
V
GS
= –20V, V
DS
= 0 – – –1.0 nA
Gate 1 Leakage Current I
G1SS
V
G1S
= –20V, V
DS
= 0, T
A
= +100°C – – –0.5 µA
Gate–Source Cutoff Voltage V
GS(off)
V
DS
= 15V, I
D
= 10mA –1.0 – –6.0 V
ON Characteristics
Zero–Gate Voltage Drain Current I
DSS
V
DS
= 15V, V
GS
= 0, Note 1 5.0 – 15 mA
Small–Signal Characteristics
Forward Transfer Admittance |y
fs
| V
DS
= 15V, V
GS
= 0, f = 1kHz 4500 – 7500 µmhos
Input Admittance Re(y
is
) 100MHz V
DS
= 15V, V
GS
= 0 – – 100 µmhos
400MHz – – 1000 µmhos
Output Admittance |y
os
| V
DS
= 15V, V
GS
= 0, f = 1kHz – – 50 µmhos
Output Conductance Re(y
os
) 100MHz V
DS
= 15V, V
GS
= 0 – – 75 µmhos
400MHz – – 100 µmhos
Forward Transconductance Re(y
fs
) V
DS
= 15V, V
GS
= 0, f = 400MHz 4000 – – µmhos
Input Capacitance C
iss
V
DS
= 15V, V
GS
= 0, f = 1.0MHz – – 4.5 pF
Reverse Transfer Capacitance C
rss
V
DS
= 15V, V
GS
= 0, f = 1.0MHz – – 1.0 pF
Input Susceptance I
M
(Yis) 100MHz V
DS
= 15V, V
GS
= 0 – – 3.0 mmho
400MHz – – 12.0 mmho
Functional Characteristics
Noise Figure NF 100MHz
V
DS
= 15V, I
D
= 5mA,
i
Ω
– – 2.0 dB
400MHz
R
i
G
= 1k
Ω
– – 4.0 dB
Common Source Power Gain G
ps
100MHz
V
DS
= 15V, I
D
= 5mA,
i
Ω
18 – – dB
400MHz
R
i
G
= 1k
Ω
10 – – dB
Output Susceptance I
M
(Yos) 100MHz V
DS
= 15V, V
GS
= 0 – – 1000 µmhos
400MHz – – 4000 µmhos
Note 1. tp = 100ms, Duty Cycle = 10%.