Datasheet

NTE2328 (NPN) & NTE2329 (PNP)
Silicon Complementary Transistors
Audio Power Output
TO3PBL Type Package
Features:
D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (T
A
= +25°C unless otherwise specified)
Collector−Base Voltage, V
CBO
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector−Emitter Voltage, V
CEO
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter−Base Voltage, V
EBO
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25°C), P
C
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
CBO
V
CB
= 200V, I
E
= 0 − − 5.0 μA
Emitter Cutoff Current I
EBO
V
BE
= 5V, I
C
= 0 − − 5.0 μA
Collector−Emitter Breakdown Voltage V
(BR)CEO
I
C
= 50mA, I
B
= 0 200 − − V
DC Current Gain h
FE1
V
CE
= 5V, I
C
= 1A 55 − 160
h
FE2
V
CE
= 5V, I
C
= 8A 35 60 −
Collector−Emitter Saturation Voltage V
CE(sat)
I
C
= 10A, I
B
= 1A − 1.5 3.0 V
Base−Emitter Voltage V
BE
V
CE
= 5V, I
C
= 8A − 1.0 1.5 V
Transistion Frequency f
T
V
CE
= 5V, I
C
= 1A − 25 − MHz
Collector Output Capacitance C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz − 470 − pF