Datasheet

Electrical Characteristics (Cont’d): (T
A
= 25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d)
BaseEmitter Saturation Voltage
NTE123A
V
BE(sat)
I
C
= 150mA, I
B
= 15mA, Note 1
0.6 1.2 V
I
C
= 500mA, I
B
= 50mA, Note 1 2.0 V
NTE159M I
C
= 150mA, I
B
= 15mA, Note 1 1.3 V
I
C
= 500mA, I
B
= 50mA 2.6 V
Small–Signal Characteristics
Current GainBandwidth Product
NTE123A
f
T
I
C
= 20mA
V
CE
= 20V, f = 100MHz,
300 MHz
NTE159M I
C
= 50mA
Note 2
200 MHz
Output Capacitance C
obo
V
CB
= 10V, I
E
= 0, f = 100kHz 8 pF
Input Capactiance
NTE123A
C
ibo
V
BE
= 0.5V
I
C
= 0, f = 100kHz
25 pF
NTE159M V
BE
= 2V 30 pF
Input Impedance (NTE123A Only) h
ie
I
C
= 1mA V
CE
= 10V, f = 1kHz 2.0 8.0
k
I
C
= 10mA 0.25 1.25 k
Voltage Feedback Ratio
h
re
I
C
= 1mA V
CE
= 10V, f = 1kHz 8 x 10
4
(NTE123A Only)
I
C
= 10mA 4 x 10
4
SmallSignal Current Gain
h
fe
I
C
= 1mA V
CE
= 10V, f = 1kHz 50 300
(NTE123A Only)
I
C
= 10mA 75 375
Output Admittance (NTE123A Only) h
oe
I
C
= 1mA V
CE
= 10V, f = 1kHz 5 35 µmhos
I
C
= 10mA 25 200 µmhos
CollectorBase Time Constant
(NTE123A Only)
rbC
c
I
E
= 20mA, V
CB
= 20V, f = 31.8MHz
150 ps
Noise Figure (NTE123A Only) NF I
C
= 100µA, V
CE
= 10V, R
S
= 1k,
f = 1kHz
4 dB
Real Part of CommonEmitter High
Frequency Input Impedance
(NTE123A Only)
Re(h
ie
) I
C
= 20mA, V
CE
= 20V, f = 300MHz 60
Switching Characteristics
NTE123A
Delay Time
t
d
V
CC
= 30V, V
BE(off)
= 500mV,
10 ns
Rise Time t
r
I
C
= 150mA, I
B1
= 15mA
25 ns
Storage Time t
s
V
CC
= 30V, I
C
= 150mA,
225 ns
Fall Time t
f
I
B1
= I
B2
= 15mA
60 ns
NTE159M
TurnOn Time
t
on
V
CC
= 30V, I
C
= 150mA,
26 45 ns
Delay Time t
d
I
B1
= 15mA
6 10 ns
Rise Time t
r
20 40 ns
TurnOff Time t
off
V
CC
= 6V, I
C
= 150mA,
70 100 ns
Storage Time t
s
I
B1
= I
B2
= 15mA
50 80 ns
Fall Time t
f
20 30 ns
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.