PAMS Technical Documentation RAE-5 Series PDA 3. RF+System Module KL8 Issue 1 04/02 Copyright 2002. Nokia Corporation. All Rights Reserved.
PAMS RAE-5 3.
PAMS Technical Documentation RAE-5 3. RF+System Module KL8 CONTENTS –Troubleshooting Page No Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RAE-5 Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–6 3–9 RAE-5 Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . List of Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RAE-5 PAMS 3. RF+System Module KL8 Technical Documentation External RF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 – 35 POWER block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 – 35 Use of CCONT ADC channels . . . . . . . . . . . . . . . . . . . . . . . 3 – 36 AUDIO_RFI block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 – 36 RFI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 – 56 RF connector and antenna switch . . . . . . . . . . . . . . . . . . . . . . 3 – 56 RF–System interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 – 56 Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 – 60 Transmit power Timing . . . . . . . . . . . . . . . . . .
PAMS RAE-5 3.
PAMS RAE-5 Technical Documentation HW IC ICE INL IO IR IrDA JTAG KL8 LCD LEAD LEAD2 LMM MAD MAD2 MAD2PR1 MAD2WD1 MADLinda MBUS MCU MFI MMC MMU MPU NTC PCI PCM PCR PDA PHF PLL PMM PPM PUP PWB PWM R&D RAM RF RFI ROM RTC SCU SCR SDRAM SIM SIMIF SIR Issue 1 04/02 3. RF+System Module KL8 Hardware Integrated Circuit In–Circuit Emulator Integral non–linearity Input/Output Infrared Infrared Data Association Joint Test Action Group, commonly used as a synonym for boundary scan (IEEE 1149.
PAMS RAE-5 3.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation RAE-5 Structure This document specifies the system HW part of RAE-5* GSM900/GSM1800 Dual Band Communicator. The KL8 module contains both the system hardware and the RF components. The system part of the KL8 module functions as a combined CMT baseband and PDA engine.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Technical Summary of System Part The RAE-5 system hardware is based on a special version of the MAD2 ASIC called MADLinda. MADLinda carries out all the signal processing and operation controlling tasks of the phone as well as all PDA tasks. To be able to run simultaneously both CMT and PDA applications, MADLinda (ROM1) has a 52MHz ARM9 core.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation of the in–phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals. Data transmission between the COBBA_GJP and the MADLinda is implemented using serial connections. Digital speech processing is executed by the MADLinda ASIC. External audio is connected to RAE-5 through system connector’s XMIC and XEAR lines.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Electrical Characteristics Power Supply Table 2. Operating voltages and power consumptions Name Parameter Min VIN Voltage 3.4 VBATT Voltage 3.0 Typ 3.6 Max Unit 18 V Charging voltage 4.8 V Voltage directly from main battery –to Vcore req. and RF part, 450 mA Notes typical for whole KL8 VB Voltage 3.0 3.6 4.8 V Filtered battery voltage – to VBB req. and to UI VB_CCONT Voltage 3.0 3.6 4.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 2. Operating voltages and power consumptions (continued) Name Parameter Min Typ Max Unit Notes VREF Voltage 1.478 1.500 1.523 V Reference voltage to COBBA_GJP and RF (VREF_2) (CCONT VREF) Current 150 A Available from CCONT, Current 36 A Consumption in system HW 2) VCP and VSIM together max 30mA 4) Total current from CCONT VR1–VR6 max 330mA rms System Connector Table 3.
PAMS RAE-5 3. RF+System Module KL8 Table 3. Electrical Technical Documentation characteristics of the system connector (X450) signals (continued) Pin Name Parameter 6 XMIC Input AC impedance Min Typ 2.2 Max. input signal 7 kΩ 1 Vpp 1.55 V Accessory muted (not for headset) Output DC level 2.5 2.8 V Accessory unmuted Bias current 100 600 µA Output LOW 0 0.22*VBB V 2 mA MBUS Pullup resistance 4.7 kΩ Series resistance 270 Ω to VBB Input LOW 0 0.3*VBB V 0.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 4. Battery Connector (X100) Electrical Specifications Pin Name Min 3 BTEMP 0 0 4 BGND Typ (continued) Max Unit Notes 1.4 V Battery temperature indication Phone has 100k 5% pull–up resistor, Battery package has NTC pull down resistor: @+25C 47k 5%, B=4050 3% kW Fast power up (in production) V Battery ground – connected directly to system HW GND 1 0 0 Backup battery connector Table 5.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 7. SIM Connector (X101) Electrical Specifications Pin Signal Name SIM Contact Parameter Min CLK (C3) Vout HIGH Vout HIGH Typ (continued) Max Unit Notes 4.0 VSIM V 5V SIM Card 2.8 VSIM V 3V SIM Card Type 1 SIMCLK Vout LOW 0.4 Frequency 3.25 Trise/Tfall 5 VSIM VPP (C6) 3V/5V SIM Card 3V/5V SIM Card ns 3V/5V SIM Card 25 Series Resistance O V MHz W 47 Supply Voltage 4.8 5.0 5.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation UI Signals Table 9. UI Connector Pin Signal Name 27, 28, 29 VB 15 FLVPP From/To Parameter Minimum Type Main battery Nominal 3.0 Maximum Unit 4.8 V VPROG not UI signal pins 15 and 16 connected in UL8 MADLinda (Prog_IO) pins 15 and 16 connected in UL8 17 VBB 2.7 1, 8, 21, 25, 30, 34, 41, 66, 70 GND 0 49 COL0 I/O MADLinda (Prog IO) (Prog_IO) Output high ”1” 2.85 0.8*VBB V V Output current 2 mA 0.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 9. UI Connector Pin Signal Name From/To Parameter (continued) Minimum Type Series resistance 69 67 65 64 32, 63 ROW1 Nominal (Refer to ROW0) Keyboard row MADLinda (Prog_IO) (Refer to ROW0) Keyboard row I/O MADLinda (Prog_IO) (Refer to ROW0) Keyboard row I/O MADLinda (Prog_IO) (Refer to ROW0) Keyboard row I/O MADLinda (Prog IO / (Prog_IO UIF) Output high ”1” ROW2 ROW3 ROW4 ROW5LCDCD 0.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 9. UI Connector Pin Signal Name From/To Parameter (continued) Minimum Type Nominal Output current Series resistance 10 LCDPWM O MADLinda (PWM) Output high ”1” Series resistance BACKPWM O MADLinda (PWM) Output high ”1” 0 V O MADLinda (GPIO) LCDRSTX O MADLinda (GPIO) KBLIGHTS O MADLinda (GPIO) LCDDa0 O MADLinda (LCD) 24 38 20 LCDDa1 50.7 kHz V Output high ”1” 200 W 231 Hz 0.8*VBB V Output low ”0” 0.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 9.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 9. UI Connector Pin Signal Name (continued) From/To Parameter Minimum Nominal COBBA_GJP Maximum Output swing Vpp 2.36 2.5 EARP/N Offset –50 Type 47 EARN O SPKP 45, 46 SPKN Unit V 50 Load resistance 43, 44 Maximum Function (signal details NO TAG) mV W 32 Audio Amp Output level 1.8 Vrms HF Speaker Audio Amp Output level 1.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 10. AC and DC Characteristics of signals between RF and System blocks (continued) Signal name SCLK From MADLinda To HAGAR Parameter Minimum Typical RFC VCTCXO VCTCXO MADLinda RXQP RXREF HAGAR HAGAR COBBA_GJP COBBA_GJP COBBA_GJP HAGAR V Output low ”0” 0 0.22*VBB V 2 mA Voltage 3.25 0.046 2.254 bits Load resistance (dynamic) 10 kW Load resistance (static) 1 MW Frequency 13 Signal amplitude 0.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 10. AC and DC Characteristics of signals between RF and System blocks (continued) Signal name From TXQP/TXQN COBBA_GJP To HAGAR Parameter Minimum Typical Maximum Unit Function Differential voltage swing 1.022 1.1 1.18 Vpp DC level 1.165 1.2 1.235 V Differential quadrature phase TX baseband signal for the TX I/Q modu modulator Differential offset voltage (corrected) +/– 2.0 mV Diff. offset voltage temp.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Functional Description Modes of Operation There are three main operation modes in the system when power is on: – Running – Idle – Deep Sleep Note that phone can be either on or off in each of power on states. Power OFF Too low Battery voltage or Battery removed Battery voltage high enough Reset Power Up Interrupt Interrupt Idle (VCXO ON) Running (VCXO ON) No tasks to run Deep Sleep (VCXO OFF) Deep Sleep conditions met Figure 3.
PAMS RAE-5 Technical Documentation 3. RF+System Module KL8 Power Control and Reset In normal operation the system HW is powered from the main battery. An external charger can recharge the battery while also supplying power to RAE-5. The supplied charger is so called performance charger (ACP–12), which can deliver 850mA. The power management circuitry provides protection against over–voltages, charger failures and pirate chargers etc. that would otherwise cause damage to RAE-5.
VB PA MMC VPC (HAGAR) 3.0V LINEAR REG. IR LEDs Backlight Power Vacc Power Out 3.3V LINEAR REG. Audio Amp. VXOPWR SYNTHPWR RAE-5 VBATT BATTERY 3. RF+System Module KL8 Page 3 – 26 3.7V Figure 4. Power Distribution TXPA VB_CCONT VR 1 V2V VBB VR 2 VR 3 VR 4 VR 5 VR 6 VR 7 VSIM VREF V5V CCONT VXO VB 1.
PAMS RAE-5 Technical Documentation 3. RF+System Module KL8 Power up When main battery is connected to device, powering on circuitry keeps CCONT PWRONX/WDDISX pin connected to ground through10kW resistor as long as CCONT releases the PURX reset signal. This activates the CCONT immediately when battery is connected. When the CCONT is activated, it switches on internal baseband and core regulators and generates a power up reset signal PURX for MADLinda.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation The PWM pulse width is controlled by the MPU in MADLinda which sends a control value to CCONT through a serial control data bus. The main battery voltage rise is limited to a specified level by turning the switch off. Lower limit (4.8V) in CHAPS is permanently selected because only lithium batteries are supported. Charging current is monitored by measuring the voltage drop across a sensor resistor.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation HAGAR (RF) CCONT CCONT WATCHDOG HAGARRSTX SimCardRstX MADLinda COBBARSTX COBBA PURX ExtSysResetX DOC LCDRSTX FLRPX UI conn. (To CMT LCD Controller) FLASH Figure 6. Board/Module level reset scheme PURX resets the whole MADLinda. ExtSysResetX signal follows PURX activity during reset. After reset this signal can be configured as IO and thus controlled by SW with MPUGenOut8 control bit.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation System to interface In following chapters the blocks of system HW in SYSTEM part of KL8 schematics and functions related to each interface are described. The blocks include: CPU, MEMORIES, MMC, IRDA, UI, SYSCON, AUDIO_RFI and POWER. Component placement diagrams are in the A3 section.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Connection in UL8 Flex X400 UI Connector 15 16 D300 MADLinda FLVPP PROG_EN MPUGenIO1 D351 VPP D352 VPP XIP Flashes Figure 7. XIP Flash Vpp connection SDRAM Memory Synchronous DRAM is used as working memory and PDA display buffer memory. MADLinda has a separate 16 bit wide interface for SDRAM device. Interface supports also byte accesses. Supported memory clocking speeds are 13MHz and 52MHz. MADLinda can execute code also from SDRAM.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation MMC block Main components in MMC block are: – MMC connector (X001) – ESD protection zener array (V001) MMC mode type serial interface to Memory Card is controlled by the MMC interface block in MADLinda. The MMC interface includes two serial lines, command and data, and one clock line that is used to clock serial transfers in both lines. Used clock frequency is 13MHz. SPI mode Memory Cards are not supported in RAE-5. Memory Card is powered with 3.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Battery removal signal BATT_REM signal comes from the battery removal switch.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation DCE_TX DCE_RX DTR GND Spring contacts to PWB L_GND DC_jack VIN SGND MBUS XEAR CHRG_CTRL XMIC Guiding and locking holes Figure 9. External RF with switch System Connector Serial connections Serial interface signals are MBUS (DCE_DCD) [MBUS], DCE_RX [AccTxData], DCE_TX [AccRxData] and DCE_DTR [DTR]. First name is the contact name in the system connector and in square brackets is given the signal name used in schematics.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Charger controlling PWM output line, CHRG_CTRL, comes from CCONT’s PWM output (PWM_OUT). External RF External RF signal comes from RF section of KL8. RF connector in system connector includes switch for external/internal signal routing. When external RF plug is not connected to the system connector, RF signal is connected to coaxial antenna cable connector (X499).
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation 3.0V VMMC supply voltage for Memory Card is generated with linear regulator (N103) from filtered battery voltage (VB). Regulator is controlled with the MMC_PWR signal from MADLinda MPUGenIO5. Accessory power output (VACC) through the system connector’s DCE_DTR line is generated with 3.0 volts linear regulator (N104) from filtered battery voltage (VB).
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation COBBA_GJP is a combined AUDIO– and RF–codec for phones with serial RF TxIQ & RxIQ data lines and serial control interface.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Figure 10 describes the audio connections in system HW. Audio accessories Headset Carkit MADLinda System connector COBBA_GJP XEAR HF SGND HFCM XMIC MIC1N GND MIC3N MIC1P HookDet MIC3P HeadDet AUXOUT UI connector Earpiece EARP EARN MBIAS MIC2N MIC2P MPUGenOut 0 DSP PCM DSP PCM SerMFI (control of COBBA) COBBA[x] CCONT Audio Amp. HF–Speaker EAD Figure 10.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Introduction to RF of KL8 Maximum ratings Table 12. Maximum ratings of RF block Parameter Rating Max battery voltage (VBATT), idle mode 4.2 V Max battery voltage during call, highest power level 4.2 V Regulated supply voltages (VXO, VSYN_1, VSYN_2, VTX, VRX) 2.8 +/– 3% V PLL charge pump supply voltage (VCP) 4.8 +/– 0.2 V Voltage reference (VREF_2) 1.5 +/– 1.5% V Voltage reference (RXREF) 1.2 +/– 0.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation can be controlled individually with 2.8 V logic directly or through control register. The regulator IC is located in the system block of the transceiver. Use of the regulators is illustrated in the power distribution diagram Figure 12. VREF_2 from CCONT IC and RXREF from COBBA IC are used as the reference voltages for HAGAR RF–IC, VREF_2 (1.5V) for bias reference and RXREF (1.2V) for RX ADC’s reference.
PAMS RAE-5 Technical Documentation 3. RF+System Module KL8 4.7 V regulator in VCP line The function of the regulator is to be a DC switch. The RESET line controls regulator’s output and makes sure that there is no Vchp voltage if the reset is active (low).
1.76 A PA Vpc (Hagar) VXOENA SYNPWR VR 2 vrx VR VR VR 3 4 5 vsyn_2 vsyn_1 vtx 2 mA 6 mA VR 7 V5V vcp 20 mA LNA VCTCXO +buff. VR 6 COBBA analog 4V7 Reg VREF vref_2 HAGAR bias ref 20 mA VCO HAGAR RF–IC RX / TX parts PLL 1 mA TXP PAMS Issue 1 04/02 RX: 53 mA TX: 100 mA Technical Documentation Figure 12. Power distribution diagram VR 1 vxo RAE-5 VBATT 3. RF+System Module KL8 BATTERY Power distribution diagram Page 3 – 42 3.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation RF characteristics Table 15. Main RF characteristics Item Values / E–GSM Values / DCS1800 Receive frequency range 925 ... 960 MHz 1805 ... 1880 MHz Transmit frequency range 880 ... 915 MHz 1710 ... 1785 MHz Duplex spacing 45 MHz 95 MHz Channel spacing 200 kHz 200 kHz 174 374 Power class 4 1 Number of power levels 15 16 Number of RF channels Transmitter characteristics Table 16.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Output power is measured from the external antenna connector. In the dual– slot mode the power levels of adjacent time slots must be individually and arbitrarily controllable. Receiver characteristics Table 19. Receiver characteristics Item Type LO frequencies Typical 3 dB bandwidth Sensitivity Page 3 – 44 Values / E–GSM Values / DCS1800 Linear, direct conversion, dual band, FDMA/TDMA 3700 ... 3840 MHz 3610 ...
PAMS RAE-5 Technical Documentation 3. RF+System Module KL8 Functional descriptions RF block diagram The block diagram of the direct conversion transceiver architecture used in KL8 is shown in Figure 13. The architecture contains one RF ASIC (HAGAR), dual– band PA module, VCO and VCTCXO modules, RF filters for TX and RX, and discrete LNA stages for both receive bands.
PAMS RAE-5 TXIP TXIN TXQP TXQN 13 MHz to ASIC TXP VCXO TXC AFC 26 MHz to ASIC SHF VCO SERIAL CTRL BUS PLL f/2 f EGSM ANT SW PCN EGSM PCN External antenna (car kit) Internal antenna Mechanical switch Figure 13. Page 3 – 46 RAE-5* RF block diagram Issue 1 04/02 EGSM SAW EGSM Dual PA Buffer Diplexer PCN f/2 HAGAR f/2 f f f/2 f f f/2 VREF_2 1.5 V Technical Documentation BIAS RXREF 1.2 V RXQ RXI 3.
PAMS RAE-5 Technical Documentation 3. RF+System Module KL8 Frequency synthesizer VCO frequency is locked with PLL into stable frequency source, which is a VCTCXO–module . The VCTCXO is running at 26 MHz. The residual temperature, drift, Doppler and initial inaccuracy effects are compensated with AFC ( automatic frequency control ) voltage.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation input level) in EGSM band and over 1.5 W (6 dBm input level) in DCS1800 band into 50 ohm output . Power control circuitry consists of discrete power detector (common for EGSM and DCS1800) and error amplifier in HAGAR. There is a directional coupler connected between PA output and antenna switch. It is a dualband type and has input and outputs for both systems.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Antenna switch SWITCH (SW_1, SW_2) Table 20. Electrical specification Parameter Min. Terminating impedance Typ. Max. Unit 50 ohm VSWR 1.8 Permissible input power 3.0 PEAK 2.4 2.8 V 0.2 V Control current (TX–mode) 10 mA (RX–mode) 10 uA Max. Unit Control voltage : HI LO 2,7 W 0 TX–FILTERS Table 21. TX_1 to ANT Electrical specifications Parameter Min. Passband Terminating impedance Typ.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 24. ANT to RX_2 Electrical specifications Parameter Min. Passband Typ. 1805 Terminating impedance Max. Unit 1880 MHz 50 VSWR, RX_2 and ANT (1805...1880 MHz) ohm 2.0 Permissible input power 11 dBm Receiver blocks RX EGSM900/DCS1800 DUALBAND SAW FILTER Unbalanced inputs and outputs Table 25. Electrical specifications Parameter Min. Typ. Max. Unit Filter 1 (from input 1 to output 1) Passband 925 – 960 Insertion loss 2.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation DCS1800 Pre–amplifier (LNA) Table 27. DCS1800 Pre–amplifier specifications Parameter Min. Typ. Frequency band Max. Unit/Notes 1805 – 1880 Supply voltage 2.4 MHz 2.85 Current consumption V 6.5 mA Input VSWR 1.2 1.6 Output VSWR 2.9 3.3 Gain step 32 dB, room temp. GSM/PCN IC (Hagar), RX part Table 28. GSM/PCN IC RX part Specification Parameter Supply voltage Minimum Typical Maximum Unit / Notes 2.7 2.78 2.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 30. I/Q Parameters Parameters Min I/Q Minimum Input frequency (depends on external capacitor if AC–coupled) I/Q Maximum Input frequency Typ Max Units 0 Hz 300 kHz I/Q Input Level (balanced input) 1 I/Q Baseband Input Resistance (balanced) Vpp 10 MΩ I/Q Baseband Input Capacitance (balanced) 20 I/Q Input Common–mode Voltage 1 pF 1.2 1.25 V EGSM TX saw filter Table 31. Electrical specifiations Tamb = –10 ... +80 deg.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation TX–buffer and 3dB attenuator Table 33. Electrical specifiations Parameter Min. Frequency range Typ. 880 Max. Unit 1785 MHz Input impedance 50 ohm Output impedance 50 ohm Input power GSM (880...915 MHz) 0 dBm Input power PCN (1710...1785 MHz) 2 dBm Output power GSM 5.6 dBm Output power PCN 3.3 dBm Supply voltage 2.8 V Current consumption 26 mA Dual–band power amplifier Table 34.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 36. Max. ratings, PCN (continued) Parameter Symbol Min Typ Max Unit Input impedance Zin 50 ohm Output impedance Zout 50 ohm Input power Pin 4.5 dBm Output power Pout(1) 33 dBm Output power Pout(2) 31.2 dBm Control voltage range Vpctrl 0.2 2.2 dB dBm Isolation –42 –37 Input VSWR 1.5 3 Directional coupler Table 37. Directional coupler specifications Parameter Min. Typ. Max.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 39. Electrical specifications, VCTCXO (continued) Parameter Min. Typ. Nominal frequency Max Unit/.Notes 26 Duty Cycle MHz 40 Start up time output level within 90% and output frequency limits +/–0.05ppm from the final value 60 % , (T+) / (Ttotal) 5 ms SHF PLL in HAGAR Table 40.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Connections Antenna One common antenna resonating on both bands is used. The antenna is located in the cover part. The RF connection between the KL8 module and the antenna is a coaxial cable. RF connector and antenna switch There are two antenna connectors in KL8 module. One is the connector for external (car kit) antenna and it has an integrated mechanical switch function. This connector is integrated with the system connector.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 44. AC and DC Characteristics of signals between RF and System blocks Signal name VBATT From Battery To PA Parameter Voltage Minimum Typical Maximum Unit 3.1 3.7 4.8 V 3500 mA 1.523 V 150 uA 2.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 44. AC and DC Characteristics of signals between RF and System blocks (continued) Signal name TXP From MADLind da To HAGAR Parameter Minimum Typical RFC RXIP COBBA VCTCXO HAGAR VCTCXO MADLind da COBBA 2.0 2.85 V Logic low ”0” 0 0.5 V Load Resistance 10 220 kohm 20 pF 2.254 V Voltage 0.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Table 44. AC and DC Characteristics of signals between RF and System blocks (continued) Signal name TXIP/ TXIN From COBBA To HAGAR Parameter Minimum Typical Maximum Unit Function Differential voltage swing (x0.75) 1.226 1.32 1.416 Vpp DC level 1.165 1.2 1.235 V Differential offset voltage (corrected) +/–2.0 mV Differential in–phase TX baseband signal f the th TX I/Q modd for ulator.
PAMS RAE-5 3. RF+System Module KL8 Technical Documentation Timings Transmit power Timing one burst 542.8 us or two bursts Pout TXC TXP Modulator power unknown min 340us Control writings 4 1 3 7 5 Figure 14. Transmitter control timing diagram for all kind of TX bursts Synthesizer clocking Synthesizers are controlled via serial control bus, which consists of SDATA, SCLK and SENA1 signals. These lines form a synchronous data transfer line. SDATA is for the data bits, SCLK is 3.
