User Guide

PAMS
Technical Documentation
RAE-3
8. Troubleshooting
Page 8 – 29
Issue 1 06/01
2.8 Memory Tests
2.8.1 Test in boot up
FLASHes 0 (D351), 1 (D352) and 2 D(353):
– manufacturer and device id are read from each of the flashes then compared
to value stored in FLASH 0.
– id read program code is executed from API RAM
– If FLASH 0 is broken the phone will not boot up properly (user test code re-
sides in FLASH 0) i.e. probably not even blink CMT backlights.
– If one or more flash manufacturer and device id read fail CMT display back-
lights will blink 2 times in a loop.
SDRAM (D350):
– Data bus test:
• Test will detect if lines are stuck at high or low state
• Test will detect any bridging faults
– Address bus test:
• data is written to certain addresses and read back and verified
– tested lines: address bus, data bus, SDRRASX, SDRCASX, SDRWEX and
SDRCLK
– SDRDQMU, SDRDQML and SDRCKE functionality is tested only partly
– If either of these tests fail CMT display backlights will blink 3 times in a loop
Serial FLASH (D354):
– Id is read and id bits (3–5) are compared to value 0x30
– If the test fails CMT display backlights will blink 4 times in a loop
– tested lines: SEPI, SEPO and SEPClk
SEPCSX (low) and EXT_SYS_RESETX (high) tested partly
– problems found with test SW:
• id read fails and CMT backlights blink but serial flash is ok ⇒ prob-
lem is in MADLinda