PAMS Technical Documentation RAE–2 Series PDA Phone Chapter 2 –Transceiver BS8– Baseband Block Original 02/99 Copyright 1999 Nokia Mobile Phones. All rights reserved.
PAMS RAE–2 Baseband Technical Documentation AMENDMENT RECORD SHEET Amendment Date Number 11/98 Page 2– 2 Inserted By Comments Original Original 02/99
PAMS Technical Documentation RAE–2 Baseband CONTENTS –Baseband Page No Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2– 5 Technical Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2– 5 Technical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . .
PAMS RAE–2 Baseband Technical Documentation Audio control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PDA Tones . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CMT Alert Signal Generation . . . . . . . . . . . . . . . . . . . . . . . . External audio connections . . . . . . . . . . . . . . . . . . . . . . . . . . Analog audio accessory detection . . . . . . . . . . . . . . . . . . . . Headset detection . . . . . . . . . . . . . . . . .
PAMS RAE–2 Baseband Technical Documentation Introduction This document contains the specification to the Baseband section of the BS8 module. The BS8 module carries out almost all CMT functions of RAE–2. BS8 can be divided into two functional sections; BaseBand (BB) and RF. Some of CMT baseband circuits are implemented to both BS1 and BS2 modules. The Baseband module BS8 comprises four ASICs (CHAPS, CCONT, COBBA–GJ and MAD2) that perform the baseband functions of the module.
PAMS RAE–2 Baseband Technical Documentation The baseband is running from a 2.8V power rail, which is supplied by the power controlling ASIC. In the CCONT ASIC there are 6 individually controlled regulator outputs for RF–section and two outputs for the baseband. In addition there is one +5V power supply output (V5V) for flash programming voltage and for other purposes where a higher voltage is needed. The CCONT contains also a SIM interface, which supports both 3V and 5V SIM–cards.
PAMS RAE–2 Baseband Technical Documentation The COBBA supports three microphone inputs and two earphone outputs. The inputs can be taken from an internal microphone, a headset microphone or from an external microphone signal source. The output for the internal earphone is a dual ended type output capable of driving a dynamic type speaker. Input and output signal source selection and gain control are performed inside the COBBA according to control messages from the MAD.
PAMS RAE–2 Baseband Technical Documentation Technical Specifications Maximum Ratings Parameter Rating Battery voltage, idle mode –0.3 ... 4.1V without charger Charger input voltage –5.0 ... 16V Operating temperature range –25C to +70 C Storage temperature range –40C to +85 C DC Characteristics Supply voltages Line Symbol Minimum Typical / Nominal Maximum Unit / Notes Supply battery voltage 3.0 3.6 4.1 V Battery powerup voltage (HW) 2.9 3.0 3.1 V Battery cut off voltage (HW) 2.
PAMS RAE–2 Baseband Technical Documentation Connectors External Connections from Baseband section of BS8 module This section describes the external electrical connections and interface levels on the baseband section of the BS8 module. The electrical interface specifications are collected into tables that cover a connector or a defined interface each. Connectors to other modules of the product Bottom Connector The bottom connector has spring type of connections.
PAMS RAE–2 Baseband Technical Documentation Table 2. Baseband signals of the bottom connector (X170) Pin Name Min 1 L_GND 0 2 VIN 7.25 3 CHRG_ CTRL Typ 7.6 Max Unit 0 V Supply ground 7.95 V Unloaded ACP–7 Charger (5kohms load) 16.9 V Peak charger output voltage (5kohms load) Loaded charger output voltage (10ohms load) 3.25 3.6 3.95 V 320 370 420 mA 7.1 8.4 9.3 V Unloaded ACP–9 Charger 3.6 3.95 V Loaded charger output voltage (10ohms load) 720 800 850 mA 0 0.
PAMS RAE–2 Baseband Technical Documentation The bottom connector has mounting holes for a fastening to a shielding frame located between the PDA and CMT modules. The bottom connector has spring type connections to the CMT and the PDA module. The bottom connector includes the following parts: – DC connector for external plug–in charger and a desktop charger – System connector for accessories. – Connector for external RF signal. This connector is equipped with throw–over–switch.
PAMS RAE–2 Baseband Technical Documentation Table 3. Battery Connector Electrical Specifications (X160) Pin Name Min Typ Max Unit Notes 1 VBATT 3.0 3.6 4.1 V Battery voltage 2 BSI 0 2.85 V Battery size indication CMT has 180kohm pull up resistor. SIM Card removal detection (Threshold is 2.4V@VBB=2.8V) 17.1 18 18.9 kohm Field Test Battery (4.1V) 21.8 22 22.2 kohm BBS–5 Service battery (No cells) 31.35 33 34.65 kohm BLN–3 Li–ion battery (4.
PAMS RAE–2 Baseband Technical Documentation Table 4. SIM Connector Electrical Specifications (X150) Pin Name Parameter Min 4 GND GND 0 3, 5 VSIM 5V SIM Card 4.8 3V SIM Card 2.8 5V Vin/Vout 6 DATA Max Unit Notes 0 V Ground 5.0 5.2 V Supply voltage 3.0 3.2 4.0 ”1” VSIM 0 ”0” 0.5 2.8 ”1” VSIM 0 ”0” 0.5 5V SIM Card 4.0 ”1” VSIM 3V SIM Card 2.8 ”1” VSIM 3V Vin/Vout 2 1 SIMRST SIMCLK Typ Frequency 3.
PAMS RAE–2 Baseband Technical Documentation Board to Board Connector pin 1 pin 25 All interfaces (except RF antenna signal) from the BS8 module to the X190 other RAE–2 modules are routed over a 50–pins board to board conpin 50 pin 26 nector. The interfaces can be divided into several groups; CMT–UI, CMT–HF audio, CMT–PDA, MMC– Figure 8. BoBo Connector PDA and supply lines for the BS1 and the BS2 modules.
PAMS RAE–2 Baseband Technical Documentation Table 5. Board to Board Connector (X190) Pin I/O Name Function Min 10 O EARP Earpiece Positive 11 O EARN Earpiece Negative 12 13 GND I PWRONx Max Unit Description / Note 50 223 mVpp Differential voltage between EARP and EARN nodes I 32kHz Typ 0 0.45 VDC Active state, min. 64ms 2.85 VDC Inactive state 0.45 VDC Pulse low level 2.
PAMS RAE–2 Baseband Technical Documentation Table 5. Board to Board Connector (X190) Pin I/O Name 30 O LCDCD 31 O LCDRSTx 32 O 33 34 LCDCSx GND O GENSCLK Function CMT LCD Command / Data S l t Select CMT LCD Reset CMT LCD Chip Select Min (continued) Typ Max Unit Description / Note 0 0.5 VDC Low, Command 2.1 2.85 VDC High, Data 0 0.5 VDC Low, Reset active 2.1 2.85 VDC High, Reset inactive 0 0.5 VDC Low, active 2.1 2.85 VDC High, inactive 0 0.5 VDC Low 2.
PAMS RAE–2 Baseband Technical Documentation Table 5. Board to Board Connector (X190) Pin I/O Name 45 I/O MMC_CMD Function Memory Card Command / Address / Response, Bidirectional (continued) Min Typ Max Unit Description / Note 0 0 0.45 VDC Low, Data to the card 2.3 2.8 2.85 VDC High, Data to the card, pulled up with 10kohm resistor to MMC_VSYS in CMT module 0.
PAMS RAE–2 Baseband Technical Documentation phone requires a bias voltage to operate. The bias voltage is generated from the VCOBBA supply with a transistor which is driven by the MAD general I/O signal (MCUGenOut5). Table 6. Microphone signals (B250) Pin Name 6 MICP Min Typ Max Unit 3.2 20 mVpp Notes Differential voltage between MICP and MICN RF– Baseband interface The interface signals between the BB and the RF section are shown in next the table as a logical interface.
PAMS RAE–2 Baseband Technical Documentation Table 7. AC and DC Characteristics of RF/BB signals (continued) Signal name AFC RFC RXIP/RXIN From To COBBA VCTCXO VCTCXO MAD SUMMA COBBA Parameter Minimum Typical 2.254 0.046 Resolution 11 bits Load resistance (dynamic) 10 kohm Load resistance (static) 1 Mohm 500 uVrms Settling time 0.5 ms Frequency 13 Signal amplitude 0.5 Load resistance 10 Load capacitance 5 Output level 1.0 Vpp 10 pF 50 1344 mVpp 600 ohm 1 pF 0.
PAMS RAE–2 Baseband Technical Documentation Table 7. AC and DC Characteristics of RF/BB signals (continued) Signal name TXP TXC From To Parameter Minimum Maximum Unit MAD SUMMA Logic high ”1” 2.1 2.85 V Logic low ”0” 0 0.5 V COBBA SUMMA Voltage Min 0.12 0.18 V Voltage Max 2.27 2.
PAMS RAE–2 Baseband Technical Documentation Functional Descriptions Power Management VCP VSYN VTX VRX VREF SYNPWR RF SUPPLIES PA SUPPLY 13MHz CLK VCO RF BASEBAND HF–amp VREF HF COBBA SIMCONN CCONT VCOBBA SCOTTY VCORE MAD MAD + MEMORIES PWRKEYx VSIM VBB PURX PHASER CMT UI BATT.CONN VBATT CHAPS BS1 BS8 Li–ion Battery 3.6V LIM AGND GND VIN BS2 BOTTOM CONNECTOR CHARGER IF Figure 9.
PAMS RAE–2 Baseband Technical Documentation The charging control ASIC called CHAPS provides protection against overvoltages, charger failures and pirate chargers etc. that would otherwise cause damage to the phone. Battery identification Battery types are identified by a pulldown resistor inside the battery pack. The MCU can identify the battery by reading the BSI line DC–voltage level with a CCONT A/D converter. Also the PDA needs to know whether the battery is connected or not.
PAMS RAE–2 Baseband Technical Documentation Vcc 0.85 0.05 Vcc 0.55 0.05 Vcc SIMCARDDETX SIGOUT GND Figure 11. SIMCardDetX detection levels Battery charging The electrical specifications define the idle voltages generated by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the charger input. At the phone end there is no difference between a plug–in charger or a desktop charger.
PAMS RAE–2 Baseband Technical Documentation charging to a phone with an empty battery. The startup circuit charges the battery until the battery voltage level 3.0V (+/– 0.1V) is reached. Then the CCONT releases the PURX reset signal and the program execution starts. The charging mode is changed from startup charging to PWM charging that is controlled by the MCU software. If the battery voltage reaches 3.55V (3.
PAMS RAE–2 Baseband Technical Documentation VCH VCH
PAMS RAE–2 Baseband Technical Documentation the VREF. The MCU calculates the battery temperature by reading the BTEMP line DC–voltage level with a CCONT A/D–converter. BVOLT VREF BATTERY CMT BSI 100k 10k BTEMP RT NTC CCONT BTEMP 27p 10n BGND MAD Figure 15. Standard battery BTEMP connection Based on 47k ± 5 % NTC with B = 4090 ±1.5 %. Without any alignment, with that and 1 % pull–up resistor, ± 2.5 _C accuracy is achieved between – 20 and +60 _C (± 3.5 _C @ –40 ... +85 _C). Table 10.
PAMS RAE–2 Baseband Technical Documentation between 3V and 5V and controlled by the SIMPwr line from MAD to CCONT. The COBBA analog parts are powered from a dedicated 2.8V supply VCOBBA. The CCONT supplies also 5V for RF and for flash VPP. Table 11.
PAMS RAE–2 Baseband Technical Documentation The lower core voltage is used only with MAD c07 technology in near future. There are two jumper resistors (R151 and R152, see the BS8 schematics) in baseband for selecting between normal or lower MAD core voltage. Switched mode supply VSIM There is a switched mode supply for SIM–interface. SIM voltage is selected via serial IO.
PAMS RAE–2 Baseband Technical Documentation driven power up. If the PWRONX is low when the 62 ms delay expires, the PURX is released and the SLEEPX control goes to MAD. If the PWRONX is not low when 62 ms expires, the PURX will not be released, and CCONT will go to power off ( digital section will send power off signal to analog parts). SLEEPX PURX PWRONX VR1,VR6 VBB (2.8V) Vchar 1 2 3 1:Power switch pressed ==> Digital voltages on in CCONT (VBB) 2: CCONT digital reset released.
PAMS RAE–2 Baseband Technical Documentation SLEEPX PURX VXO Vbat VR6 VR1 VBB (2.8V) Vchar Vref 1 2 3 1: Battery voltage over 3.0==>Digital voltages to CCONT (VBB) 2: CCONT digital reset released. VCXO turned on 3: 62ms delay before PURX released Figure 18. Power up with charger Service Request State (SRS) If CMT is powered off, the PDA has a possibility to startup the CMT to SERVICE REQUEST (SRS) state by using PWRONx line. The PDA can do it by pulling the PWRONx line to the low (”0”) state.
PAMS RAE–2 Baseband Technical Documentation PDA CMT 1k ROW0 MAD PWRKEYx VBAT 200k / 2k pwroff / pwron SCOTTY inactive: ”HighZ” active: ”0” 10k PWRONx 0 1 2 PWRONX CCONT 3 ROW0 CMT is powered by PWRKEYx: PWRONx (CCONT pin 29) VBB 0s 0 t 62ms 1 2 3 CMT is powered by PWRONx: ROW0 PWRONx (CCONT pin 29) VBB t 0s 62ms 0: –CCONT PWRONx input goes to ”0”. CCONT start power on se quency and releases BB regulator (VBB → 2.8V).
PAMS RAE–2 Baseband Technical Documentation Sleep Mode In the sleep mode all the regulators except the baseband VBB and the SIM card VSIM regulators are off. Sleep mode is activated by the MAD after MCU and DSP clocks have been switched off. The voltage regulators for the RF section are switched off and the VCXO power control, VCXOPwr is set low. In this state only the 32 kHz sleep clock oscillator in CCONT is running.
PAMS RAE–2 Baseband Technical Documentation limit, the MCU initiates a power down procedure and disconnects the SIM power. Then the MCU outputs a system reset signal and resets the DSP. If there is no charger connected, the MCU writes a short delay to CCONT watchdog and resets itself. After the set delay the CCONT watchdog expires, which activates the PURX and all regulators are switched off and the phone is powered down by the CCONT.
PAMS RAE–2 Baseband Technical Documentation crophone or from an external microphone signal source. The microphone signals from different sources are connected to separate inputs at the COBBA–GJ. Inputs for the microphone signals are differential type. The MIC3 input is used for a headset microphone that can be connected directly to the system connector.
PAMS RAE–2 Baseband Technical Documentation 2.8 V Baseband 47k 22k HookDet MAD 22k HeadDet 1u CCONT 100n EAD 2.8 V 47k 2k2 AUXOUT 1m 10m 450ohm/ 100M 47R HF XEAR 22p 10m 450ohm/ 100M 47R SGND HFCM 22p 330R COBBA 450ohm/ 100M 33n XMIC MIC1N MIC1P 22p 33n 33n MIC3N MIC3P 33n Figure 21.
PAMS RAE–2 Baseband Technical Documentation Analog audio accessory detection The XEAR signal line comprises a 47 kW pullup in the transceiver and 10 kW pulldown to SGND in the accessory. The XEAR is pulled down when an accessory is connected, and pulled up when disconnected. The XEAR is connected to the HookDet line (in MAD), an interrupt is given due to both connection and disconnection. There is filtering between XEAR and HookDet to prevent audio signal giving unwanted interrupts.
PAMS RAE–2 Baseband Technical Documentation Internal audio connections The speech coding functions are performed by the DSP in the MAD2 and the coded speech blocks are transferred to the COBBA–GJ for digital to analog conversion, down link direction. In the up link direction the PCM coded speech blocks are read from the COBBA–GJ by the DSP. There are two separate interfaces between the MAD2 and COBBA–GJ: a parallel bus and a serial bus.
PAMS RAE–2 Baseband Technical Documentation Digital control All the baseband functions are controlled by the MAD2 ASIC, which consists of a MCU, a system ASIC and a DSP. In addition to the internal RAM/ROM memory, the MAD2 has an external RAM memory and external FLASH and EEPROM type of memories.
PAMS RAE–2 Baseband Technical Documentation 13MHz internal clock for the MCU and system logic blocks and a 13MHz clock for the DSP, where it is multiplied to 45.5MHz DSP clock. The system clock can be stopped for a system sleep mode by disabling the VCXO supply power from the CCONT regulator output. The CCONT provides a 32kHz sleep clock for internal use and to the MAD2, which is used for the sleep mode timing. The sleep clock is active when there is a battery voltage available i.e.
PAMS RAE–2 Baseband Technical Documentation MAD2 memory configuration MAD2 contains 12 kb RAM memory, 68 kb ROM memory.
PAMS RAE–2 Baseband Technical Documentation MCU Memory Map The MAD2 supports a maximum of 4GB internal and 4MB external address space. The external memories use address lines MCUAd0 to MCUAd21 and 8–bit/16–bit databus. The BUSC bus controller supports 8– and 16–bit access for byte, double byte, word and double word data. Access wait states (0, 1 or 2) and used databus width can be selected separately for each memory block. Table 13.
PAMS RAE–2 Baseband Technical Documentation The flash memory has a power down pin that is kept low during the power up phase of the flash to ensure that the device is powered up in the correct state, read only. The power down pin is utilized in the system sleep mode by connecting the ExtSysResetX to the flash power down pin to minimize the flash power consumption during the sleep. SRAM Memory The work memory is a static ram of size 2Mbits (256kx8bit) in a shrink TSOP32 package.
PAMS RAE–2 Baseband Technical Documentation Flash Programming RAE–2 Flashing connections the RAE–2 has two entities which can be programmed: PDA and CMT. There are four different interfaces from outside to the RAE–2 which can be used to transmit software code to the RAE–2.
PAMS RAE–2 Baseband Technical Documentation In the DCT3 type the CMT programming bootstrap code is used for starting SW downloading. The bootstrap code resides in the small internal ROM of the MAD. The bootstrap code is a small part of the download code and is used only for downloading more code into the RAM. Data on CMT Flash is divided on two parts: – CMT SW code – PPM The idea is that first the CMT SW code is programmed and after that the PPM is programmed in same method.
PAMS RAE–2 Technical Documentation Baseband Security The phone flash program and IMEI code are software protected using an external security device that is connected between the phone and a PC. The security device uses the phone given IMEI number, the software version number and a 24bit hardware random serial number that is read from the COBBA and calculates a flash authority identification number that is stored into the phone EEPROM.
PAMS RAE–2 Baseband Technical Documentation [This page intentionally left blank] Page 2– 46 Original 02/99
