PAMS Technical Documentation NSB–6 Series Transceivers System Module Issue 1 06/2000 E Nokia Mobile Phones Ltd.
NSB–6 System Module PAMS Technical Documentation CONTENTS Transceiver NSB–6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Interconnection Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 6 7 System Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAMS Technical Documentation NSB–6 System Module Audio control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PCM serial interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 25 Digital Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MAD2 WD1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 26 Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSB–6 System Module PAMS Technical Documentation Schematic Diagrams: UP9 (Section 10 at the back of the binder) Connection between RF and BB modules (Version 12.03 Edit 12) layout 12 A–1 Baseband Block Interconnections (Version 12.03 Edit 12) for layout 12 A–2 Circuit Diagram of Power Supply (Version 12.03 Edit 16) for layout 12 A–3 Circuit Diagram of MAD Block (Version 12.03 Edit 14) for layout 12 A–4 Circuit Diagram of CPU Block (Version 12.
PAMS Technical Documentation NSB–6 System Module This page intentionally left blank. Issue 1 06/2000 E Nokia Mobile Phones Ltd.
NSB–6 System Module PAMS Technical Documentation Transceiver NSB–6 Introduction The NSB–6 is a dual band transceiver unit designed for the GSM900 (including EGSM) and GSM1900 networks. It is both GSM900 phase 2 power class 4 transceiver (2W) and GSM1900 power class 1 (1W) transceiver. The transceiver consists of System/RF module (UP9), Display module (UX7) and assembly parts. The transceiver has a full graphic display and the user interface is based on a Jack style UI with two soft keys.
NSB–6 System Module PAMS Technical Documentation Interconnection Diagram LCD module Keyboard module 14 9 6 4 SIM Battery Radio Module 2 2 Issue 1 06/2000 Charger UP9 Antenna Slide (mic.) 2+2 2 3 IR Link Earpiece E Nokia Mobile Phones Ltd.
NSB–6 System Module PAMS Technical Documentation System Module Baseband Module The baseband architecture supports a power saving function called ”sleep mode”. This sleep mode shuts off the VCTCXO, which is used as system clock source for both RF and baseband. During the sleep mode the system runs from a 32 kHz crystal. The phone is waken up by a timer running from this 32 kHz clock supply. The sleeping time is determined by some network parameters.
PAMS Technical Documentation NSB–6 System Module Technical Summary The baseband module consists four ASICs; CHAPS, CCONT, COBBA– GJP and MAD2WD1, which take care of the baseband functions of the engine. The baseband is running from a 2.8V power rail, which is supplied by a power controlling ASIC CCONT. MAD2WD1 supply voltages are VBB and VCORE (V2V), VBB feeds I/O pins so that MAD2WD1 is externally fully compatible with old versions.
NSB–6 System Module PAMS Technical Documentation External and Internal Signals and Connections This section describes the external electrical connection and interface levels on the baseband. The electrical interface specifications are collected into tables that covers a connector or a defined interface. DC (charger) connector DC (charger) connector is physically integrated in the same component with the accessory interface connector. DC connector has both jack and contact pads for desk stand.
NSB–6 System Module PAMS Technical Documentation Name Min BTEMP Typ Max Unit Notes 0 1.4 V Battery temperature indication Phone has a 100k (+–5%) pullup resistor, Battery package has a NTC pulldown resistor: 47k+–5%@+25C , B=4050+–3% 2.1 3 V Phone power up by battery (input) 20 ms Power up pulse width 2.85 V Battery power up by phone (output) 200 ms Power up pulse width 0 1 kohm Local mode initialization (in production) 0 0 V Battery ground 5 10 1.
NSB–6 System Module PAMS Technical Documentation Power Distribution In normal operation the baseband is powered from the phone‘s battery. The battery consists of one Lithium–Ion cell. An external charger can be used for recharging the battery and supplying power to the phone. The baseband contains parts that control power distribution to whole phone excluding those parts that use continuous battery supply. The battery feeds power directly to the CCONT and UI (buzzer and display and keyboard lights).
NSB–6 System Module PAMS Technical Documentation MAD LIM VOUT RSENSE 2A 1u 30V 100k ICHAR VIN VCH GND PWM VBAT CHARGER TRANSCEIVER CHAPS 0R22 22k PWM_OUT MAD CCONTINT VCHAR CCONT 1n 10k GND L_GND Startup Charging When a charger is connected, the CHAPS is supplying a startup current minimum of 130mA to the phone. The startup current provides initial charging to a phone with an empty battery. Startup circuit charges the battery until the battery voltage level is reaches 3.0V (+/– 0.
NSB–6 System Module PAMS Technical Documentation The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic HIGH on the CHAPS (N101) VLIM input pin. VLIM is fixed low in hardware. When the switch in output overvoltage situation has once turned OFF, it stays OFF until the the battery voltage falls below VLIM and PWM = LOW is detected. The switch can be turned on again by setting PWM = HIGH. VCH VCH
NSB–6 System Module PAMS Technical Documentation Battery Removal During Charging Output overvoltage protection is also needed in case the main battery is removed when charger connected or charger is connected before the battery is connected to the phone. With a charger connected, if VOUT exceeds VLIM, CHAPS turns switch OFF until the charger input has sunken below Vpor (nominal 3.0V, maximum 3.4V). MCU software will stop the charging (turn off PWM) when it detects that battery has been removed.
NSB–6 System Module PAMS Technical Documentation PWM When a charger is used, the power switch is turned ON and OFF by the PWM input. PWM rate is 1Hz. When PWM is HIGH, the switch is ON and the output current Iout = charger current – CHAPS supply current. When PWM is LOW, the switch is OFF and the output current Iout = 0. To prevent the switching transients inducing noise in audio circuitry of the phone soft switching is used.
NSB–6 System Module PAMS Technical Documentation Vcc 0.85 0.05 Vcc 0.55 0.05 Vcc SIMCARDDETX SIGOUT GND Battery Temperature The battery temperature is measured with a NTC inside the battery pack. The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU can calculate the battery temperature by reading the BTEMP line DC– voltage level with a CCONT (N100) A/D–converter. Pin Name Min 3 BTEMP Max Unit Notes 0 1.
NSB–6 System Module PAMS Technical Documentation Supply Voltage Regulators The heart of the power distrubution is the CCONT. It includes all the voltage regulators and feeds the power to the whole system. The baseband digital parts are powered from the VBB regulator which provides 2.8V baseband supply. The baseband regulator is active always when the phone is powered on. The VBB baseband regulator feeds MAD and memories, COBBA digital parts and the LCD driver in the UI section.
NSB–6 System Module PAMS Technical Documentation Regulators output voltage characteristics: Characteristics Condition Min Typ Max Unit Output current VR1–VR6 Vout@2.8V 100 mA Output current VR7 Depends on external BJT Vout@2.8V 150 mA Output current VR7BASE Base current limit Vout@2.8V –10 mA Output current VBB On Current limit 250mA Output current VBB Sleep Current limit 5mA Vout@2.8V 125 mA Vout@2.
NSB–6 System Module PAMS Technical Documentation Switched Mode Supply VSIM There is a switched mode supply for SIM–interface. SIM voltage is selected via serial IO. The 5V SMR can be switched on independently of the SIM voltage selection, but can’t be switched off when VSIM voltage value is set to 5V. NOTE: VSIM and V5V can give together a total of 30mA. In the next figure the principle of the SMR / VSIM–functions is shown.
PAMS Technical Documentation NSB–6 System Module CCONT’s digital parts is released when the operating voltage is stabilized ( 50 us from switching on the voltages). Operating voltage for VCXO is also switched on. The counter in CCONT digital section will keep MAD in reset for 62 ms (PURX) to make sure that the clock provided by VCXO is stable. After this delay MAD reset is relased, and VCXO –control (SLEEPX) is given to MAD.
NSB–6 System Module PAMS Technical Documentation SLEEPX PURX CCPURX PWRONX VR1,VR6 VBB (2.8V) Vchar 1 2 3 1:Power switch pressed ==> Digital voltages on in CCONT (VBB) 2: CCONT digital reset released. VCXO turned on 3: 62 ms delay to see if power switch is still pressed. Power Up by RTC RTC (internal in CCONT) can power the phone up by changing RTCPwr to logical 1. Power Up by IBI IBI can power CCONT up by giving a short pulse (10ms) through the BTEMP line.
PAMS Technical Documentation 4. NSB–6 System Module Setting the real time clock to power off the phone by a timer. The RTC generates an interrupt signal, when the alarm is gone off. The RTC interrupt signal is connected to the PWRONX line to give a power off signal to the CCONT just like the power key. The power down is controlled by the MAD.
NSB–6 System Module PAMS Technical Documentation If the battery pack is disconnect during the sleep mode, the CCONT pulls the SIM interface lines low as there is no time to wake up the MCU. Charging Charging can be performed in any operating mode.The battery type/size is indicated by a resistor inside the battery pack. The resistor value corresponds to a specific battery capacity.
NSB–6 System Module PAMS Technical Documentation Audio control PCM serial interface The interface consists of following signals: a PCM codec master clock (PCMDClk), a frame synchronization signal to DSP (PCMSClk), a codec transmit data line (PCMTX) and a codec receive data line (PCMRX). The COBBA–GJP generates the PCMDClk clock, which is supplied to DSP SIO. The COBBA–GJP also generates the PCMSClk signal to DSP by dividing the PCMDClk. The PCMDClk frequency is 512 kHz. PCMSClk frequency is 8.0 kHz.
NSB–6 System Module PAMS Technical Documentation Digital Control The baseband functions are controlled by the MAD asic, which consists of a MCU, a system ASIC and a DSP. MAD2 WD1 MAD2 WD1 contains following building blocks: – ARM RISC processor with both 16–bit instruction set (THUMB mode) and 32–bit instruction set (ARM mode) – TI Lead DSP core with peripherials: – API (Arm Port Interface memory) for MCU–DSP communication, DSP code download, MCU interrupt handling vectors (in DSP RAM) and DSP booting.
NSB–6 System Module PAMS Technical Documentation used for the sleep mode timing. The sleep clock is active when there is a battery voltage available i.e. always when the battery is connected. MAD2WD1 supply voltages are VBB and VCORE (V2V), VBB feed I/O pins so that MAD2WD1 is externally fully compatible with old versions. VCORE feed MAD2WD1 internal fuctions supplyoltage; CPU, DSP and system logic.
NSB–6 System Module PAMS Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSB–6 System Module PAMS Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSB–6 System Module PAMS Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSB–6 System Module PAMS Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSB–6 System Module PAMS Technical Documentation Pin N:o Pin Name Pin Type Connected to/from B13 PURX I CCONT Input Power Up Reset B12 CCONTInt I CCONT Input CCONT interrupt A13 Clk32k I CCONT Input Sleep clock oscillator input D10 VCC_IO A12 SIMCardClk O CCONT 2 0 SIM clock B11 SIMCardRstX O CCONT 2 0 SIM reset A11 SIMCardIOC O CCONT 2 0 SIM data in/out control D12 SIMCardPwr O CCONT 2 0 SIM power control H10 LEADVCC C13 RxPwr O 2 0 (RX regulator
NSB–6 System Module PAMS Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req. mA Reset State A5 DSPGenOut0 O CRFU 2 0 DSP general purpose output A3 FrACtrl O RF 2 0 RF front amplifier control B3 SynthEna O HAGAR 2 0 Synthesizer data enable B1 SynthClk O HAGAR 2 0 Synthesizer clock B2 SynthData O HAGAR 2 0 Synthesizer data A2 TxPA O HAGAR 2 0 Power amplifier control Issue 1 06/2000 E Nokia Mobile Phones Ltd.
NSB–6 System Module PAMS Technical Documentation Memories MAD memory configuration The MAD2WD1 used in NSB–6 contains 16 kW RAM, and 80 kW ROM memory. Memory The MCU program code resides in an external flash program memory, which size is 16Mbits (1024k x 16bit). The MCU work (data) memory size is 2048 kbits (256k x 16bit). Flash and SRAM memory chips are packed in same combo memory package.
NSB–6 System Module PAMS Technical Documentation 8–bit/16–bit databus. The BUSC bus controller supports 8– and 16–bit access for byte, double byte, word and double word data. Access wait states (0, 1 or 2) and used databus width can be selected separately for each memory block. Flash Programming The phone have to be connected to the flash loading adapter so that supply voltage for the phone and data transmission lines can be supplied from/to the adapter.
NSB–6 System Module PAMS Technical Documentation Flash Programming Sequence CCONT pin (PurX) MAD pin (FCLK (MBUS)) MAD pin 109 (FRX (FRxData)) MAD pin (FTX (FTxData)) SRAM D221 (Chip Sel) FLASH D210 (Chip Sel) CCONT pin (PurX) MAD pin (FCLK (MBUS)) MAD pin (FRX (FRxData)) MAD pin (FTX (FTxData)) COBBA GJP COBBA GJP ASIC provides an interface between the baseband and the RF–circuitry. COBBA performs analogue to digital conversion of the receive signal.
PAMS Technical Documentation NSB–6 System Module quadrature signals. A slow speed digital to analogue converter will provide automatic frequency control (AFC). COBBA is at any time connected to MAD asic with two interfaces, one for transferring TX and RX data between MAD and COBBA and one for transferring codec RX/TX samples.
NSB–6 System Module PAMS Technical Documentation Baseband Testing The MCU software enters a local mode at startup if a dummy battery is attached and the battery temperature value is high enough. This means that the fixed resistor on the BTEMP line must correspond to a temperature higher than +85 C. In the local mode the baseband can be controlled through MBUS or FBUS connections by a PC–locals software. Baseband internal connections are tested with self tests if possible.
NSB–6 System Module PAMS Technical Documentation RF Module This RF module takes care of all RF functions of EGSM/GSM1900 dualband engine. RF circuitry is located on one side of the 8 layer tranceiver– PCB. PCB area for the RF circuitry is about 15 cm2. The RF design is based on the first dualband direct conversion RF–IC ”Hagar”. So there is no intermediate frequency and that means the number of component is much lower than before and there shall be much less interference problems than previously.
NSB–6 System Module PAMS Technical Documentation RF Frequency Plan HAGAR 925–960 MHz I–signal Q–signal 1930–1990 MHz f f/2 RX f f/2 f f/2 PLL f 3520– 3980 MHz 26 MHz f/2 VCTCXO f 13 MHz f/2 880–915 MHz I–signal Q–signal 1850–1910 MHz TX DC characteristics Regulators Transceiver has a multi function power management IC at baseband section, which contains among other functions, also 7 pcs of 2.8 V regulators. All regulators can be controlled individually with 2.
NSB–6 System Module PAMS Technical Documentation Power Distribution Diagram Vpc VBATT (Hagar) VXOENA SYNPWR TXC TXP V5V 1.57 A vcp extreg 4V5 15 mA PA VCO VR 7 VR 6 20 mA COBBA analog VR 5 vtx HAGAR RF–IC 6 mA VR 3 vsyn_1 LNA VREF HAGAR bias ref PLL 1 mA 20 mA VR 4 vsyn_2 TX: 100 mA BATTERY 3.6 V Issue 1 06/2000 RX: 53 mA VR 2 vrx VR 1 vxo RX / TX parts VCTCXO 2 mA +buff. E Nokia Mobile Phones Ltd.
NSB–6 System Module PAMS Technical Documentation RF Functional Description Architecture contains one RF–IC, dualband PA module, VCO–module, VCTCXO module and discrete LNA stages for both receive bands. HAGAR RX_I RX_Q RXref 1.2V PCS Vref_2 1.5V BIAS EGSM Serial CTRL BUS ANT SW PLL SHF VCO Bias crtl AFC Low pwr crtl VCTCXO Dual PA RFC TXC TXP PCS TXIP TXIN TXQP EGSM TXQN SAW EGSM Page 42 E Nokia Mobile Phones Ltd.
NSB–6 System Module PAMS Technical Documentation Frequency synthesizer VCO frequency is locked with PLL into stable frequency source, which is a VCTCXO–module ( voltage controlled temperature compensated crystal oscillator ). VCTCXO is running at 26 MHz. Temperature effect is controlled with AFC ( automatic frequency control ) voltage. VCTCXO is locked into frequency of the base station. AFC is generated by baseband with a 11 bit conventional DAC in COBBA.
NSB–6 System Module PAMS Technical Documentation Receiver Receiver is a direct conversion, dualband linear receiver. Received RF– signal from the antenna is fed via RF–antenna switch to 1st RX dualband SAW filter and discrete LNAs (low noise amplifier), separate LNA branches for EGSM900 and GSM1900. Gain selection control of LNAs comes from HAGAR IC. Gain step is activated when RF–level in antenna is about –40 dBm.
PAMS Technical Documentation NSB–6 System Module Transmitter Transmitter chain consists of final frequency IQ–modulator, dualband power amplifier and a power control loop. I– and Q–signals are generated by baseband also in COBBA–ASIC. After post filtering (RC–network) they go into IQ–modulator in HAGAR. LO–signal for modulator is generated by VCO and is divided by 2 or by 4 depending on system mode, EGSM/GSM1900. After modulator the TX–signal is amplified and buffered.
NSB–6 System Module PAMS Technical Documentation DIR.COUPLER PA RF_OUT RF_IN K cp K PA R1 DETECTOR K K = –R1/R2 det ERROR AMPLIFIER R2 R C DOMINATING POLE TXC AGC strategy AGC–amplifier is used to maintain output level of the receiver in certain range. AGC has to be set before each received burst, this is called pre– monitoring. Receiver is switched on roughly 280 us before the burst begins, DSP measures received signal level and adjusts AGC–amplifiers via serial bus from COBBA GJP.
NSB–6 System Module PAMS Technical Documentation is only about 5 ms for the AFC–voltage to settle. When the first burst comes in system clock has to be settled into +/– 0.1 ppm frequency accuracy. The VCTCXO–module requires also 5 ms to settle into final frequency. Amplitude rises into full swing in 1...2 ms, but frequency settling time is higher so this oscillator must be powered up early enough. DC–compensation DC compensation is made during DCN1 and DCN2 operations (controlled via serial bus).
NSB–6 System Module PAMS Technical Documentation Parts list of UP9 (EDMS Issue 9.
PAMS Technical Documentation R277 R310 R311 R350 R351 R352 R353 R354 R403 R404 R510 R530 R532 R533 R541 R546 R563 R564 R565 R610 R611 R613 R614 R640 R643 R645 R670 R671 R700 R704 R730 R737 R738 R740 R741 R744 R745 R763 R764 R790 R791 R792 R800 R801 R802 R805 R806 R807 R829 1620025 1430778 1430778 1430155 1430155 1430155 1430155 1825021 1430702 1430702 1620003 1620019 1430832 1430778 1620033 1620033 1430187 1430746 1430770 1430722 1430832 1430764 1620113 1430742 1430770 1430766 1430706 1430706 1430728 14307
NSB–6 System Module R830 R831 R832 R833 R834 C101 C102 C103 C104 C105 C106 C107 C108 C113 C120 C121 C127 C128 C129 C131 C132 C133 C140 C142 C150 C151 C152 C153 C154 C165 C201 C203 C204 C205 C206 C207 C208 C209 C211 C212 C213 C221 C231 C241 C247 C248 C249 C251 C253 Page 50 1430762 1430718 1430788 1430762 1430812 2320548 2320538 2312411 2320783 2611719 2320481 2320481 2312401 2320508 2320778 2320778 2320805 2312401 2312401 2611719 2611741 2320481 2320481 2611719 2320481 2320481 2320481 2320481 2320481 26117
NSB–6 System Module PAMS Technical Documentation C257 C258 C259 C260 C262 C263 C268 C270 C276 C291 C292 C293 C296 C297 C299 C303 C304 C306 C307 C310 C330 C331 C342 C400 C401 C405 C406 C510 C511 C512 C513 C520 C521 C522 C523 C530 C531 C532 C533 C534 C535 C540 C541 C550 C557 C560 C561 C562 C564 2320783 2320783 2320783 2320481 2320783 2320783 2320481 2610207 2320481 2320546 2320546 2320546 2610207 2610207 2320546 2320744 2320744 2320598 2320598 2312401 2320481 2320779 2320560 2320481 2320805 2320544 2320805
NSB–6 System Module C600 C601 C610 C611 C612 C613 C614 C615 C620 C621 C630 C631 C640 C642 C643 C644 C645 C701 C705 C706 C707 C708 C709 C711 C712 C713 C714 C715 C716 C720 C721 C730 C731 C734 C737 C743 C746 C747 C748 C752 C758 C759 C760 C761 C765 C766 C782 C783 C785 Page 52 2320560 2320560 2320602 2320744 2320570 2320552 2320556 2320550 2320805 2320805 2320530 2320530 2320514 2320744 2320546 2320538 2320540 2320556 2320536 2320744 2320778 2320778 2320602 2320779 2320602 2320602 2320779 2320518 2312215 23205
PAMS Technical Documentation C788 C792 C793 C799 C801 C802 C803 C804 C805 C829 C830 C831 C832 C833 C834 C835 C836 C860 L103 L104 L200 L271 L272 L303 L304 L504 L553 L600 L601 L602 L631 L672 L673 L710 L739 L751 L752 L754 L755 L756 L758 L770 L800 B100 B301 G800 G830 F101 Z600 2320514 2320560 2320540 2320534 2320564 2312221 2320564 2320520 2610203 2320560 2320560 2310793 2320778 2320744 2320744 2320540 2320544 2320548 3203705 3203705 3203709 3203709 3203709 3203709 3203709 3646063 4551015 3646069 3646051 36460
NSB–6 System Module Z620 Z670 Z700 T600 T630 T700 T740 T800 V100 V101 V104 V116 V250 V251 V252 V254 V320 V321 V322 V323 V331 V332 V333 V334 V335 V336 V337 V338 V339 V340 V343 V360 V730 V800 V903 V904 V905 V907 D200 D210 N100 N101 N220 N250 N310 N400 N401 N505 N600 Page 54 4511169 4512133 4511095 3640429 3640427 3640429 3640427 3640423 1825023 4210052 4113651 4110067 4210119 4210119 4210052 4110089 4864535 4864535 4864535 4864535 4864531 4864531 4864531 4864531 4864531 4864531 4864531 4864531 4864531 48645
PAMS Technical Documentation N702 S300 S330 X300 A001 M300 4350247 5219015 5209001 5409099 9510569 9854352 9854375 Issue 1 06/2000 Rf9205e4.2 pw amp 900/1900mhz SM, sw push button spst 5v s.key SM, sw tact spst 12v 50ma side k SM, slide conn 2pol spr p2 12v0. RF shield assy dmc02666 PC board UX7V PC board UP9 E Nokia Mobile Phones Ltd. NSB–6 System Module KEY 12V0.1A 4.5x4.5x1.6 d 140/pa 94.8x40x1.
NSB–6 System Module PAMS Technical Documentation This page intentionally left blank. Page 56 E Nokia Mobile Phones Ltd.
