PAMS Technical Documentation NSE–6 Series Transceivers Chapter 3 System Module Original 08/98
NSE–6 System Module PAMS Technical Documentation CONTENTS Transceiver NSE–6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Interconnection Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . System Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAMS Technical Documentation Headset Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internal Audio Connections . . . . . . . . . . . . . . . . . . . . . . . . 4–wire PCM Serial Interface . . . . . . . . . . . . . . . . . . . . . . . Alert Signal Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MAD2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSE–6 System Module PAMS Technical Documentation Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF baseband signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Synthesizer control timing . . . . . . . . . . . . . . . . . . . . . . . . . . . Transmitter power switching timing diagram . . . . . . . . . . . Synthesizer clocking . . . . . . . . . . . . . .
PAMS NSE–6 Technical Documentation System Module Transceiver NSE–6 Introduction The NSE–6 is a radio transceiver unit designed for the GSM network. It is a GSM phase 2 power class 4 transceiver providing 15 power levels with a maximum output power of 2 W. The transceiver is a true 3 V transceiver. The transceiver consists of System/RF module (US8), Keyboard module (UK8) and assembly parts. The transceiver has full graphic display and two soft key based user interface. The antenna is internal.
NSE–6 PAMS System Module Technical Documentation Interconnection Diagram Keyboard module UK8 Display 14 9 6 SIM 4 Battery System/RF 2 Antenna Module 2 US8 Earpiece 2 Vibra 2 Mic Page 3 – 6 6 IR Module 3+3 Charger Original 08/98
PAMS NSE–6 System Module Technical Documentation System Module External and Internal Connectors Suppply Voltages and Power Consumption Connector Line Symbol Minimum Typical / Nominal Maximum/ Peak Unit / Notes Charging VIN 7.1 8.4 9.3 V/ Travel charger, ACT–1 Charging VIN 7.25 7.6 7.95 V/ Travel charger.
NSE–6 PAMS System Module Technical Documentation Contacts Description The transceiver electronics consist of the Radio Module ie. RF + System blocks, the keyboard PCB, the display module and audio components. The keypad and the display module are connected to the Radio Module with connectors. System blocks and RF blocks are interconnected with PCB wiring. The Transceiver is connected to accessories via charger connector (includes jack and plates), headset connector and IR–link.
PAMS NSE–6 System Module Technical Documentation Baseband Module Block Diagram TX/RX SIGNALS RF SUPPLIES PA SUPPLY 13MHz SYSTEM CLOCK CLK COBBA SUPPLY CCONT COBBA SIM BB SUPPLY 32kHz CLK SLEEP CLOCK UI MAD + VBAT MEMORIES BATTERY CHAPS BASEBAND DC–jack Technical Summary The baseband module consists of four asics, CHAPS, CCONT, COBBA– GJ and MAD2, which take care of the baseband functions of NSE–6. The baseband is running from a 2.
NSE–6 PAMS System Module Technical Documentation The interface between the baseband and the RF section is handled by a specific asic. The COBBA asic provides A/D and D/A conversion of the in–phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals to and from the UI section.
PAMS NSE–6 System Module Technical Documentation Charging Connector Contact Line Symbol Function DC–jack side contact (DC–plug ring) L_GND Charger ground DC–jack center pin VIN Charger input voltage DC–jack side contact (DC–plug jacket) CHRG_CTRL Charger control output (from phone) Pin Name Min Typ Max Unit 2, b VIN 7.25 7.6 7.95 V 16.9 V Unloaded ACP–7 Charger (5kohms load) Peak output voltage (5kohms load) 3.25 3.6 3.
NSE–6 PAMS System Module Pin Name 3 XEAR Technical Documentation Min Typ 16 Max Unit Notes 47 Ω Output AC impedance (ref. SGND) 10 µF Series output capacitance Ω Load AC impedance to SGND (Headset) 150 300 1.0 22 16 Vpp Maximum output level (no load) 626 mV Output signal level 1500 Ω Load DC resistance to SGND (Headset) V DC voltage (47k pull–up to VBB) 2.8 Service connections Pin Name Min J124 MBUS 0 2.
PAMS NSE–6 System Module Technical Documentation Battery Connector The electrical specifications for the battery connector is shown in NO TAG. The BSI contact on the battery connector is used to detect when the battery is to be removed to be able to shut down the operations of the SIM card before the power is lost if the battery is removed with power on. The BSI contact in the battery pack is 0.7mm shorter than the supply power contacts to give enough time for the SIM shut down.
NSE–6 PAMS System Module Technical Documentation SIM Card Connector Pin Name Parameter Min 4 GND GND 0 3, 5 VSIM 5V SIM Card 4.8 3V SIM Card 5V Vin/Vout 6 DATA Max Unit Notes 0 V Ground 5.0 5.2 V Supply voltage 2.8 3.0 3.2 4.0 ”1” VSIM V SIM data 0 ”0” 0.5 2.8 ”1” VSIM 0 ”0” 0.5 5V SIM Card 4.0 ”1” VSIM 3V SIM Card 2.8 ”1” VSIM 3V Vin/Vout 2 1 SIMRST SIMCLK Typ Frequency Trise/Tfall max 1us 3.
PAMS NSE–6 System Module Technical Documentation Buzzer Signal Maximum output current Input high level Input low level Level (PWM) range, % Frequency range, Hz BuzzPWM / BUZZER 2mA 2.5V 0.2V 0...50 (128 linear steps) 440...
NSE–6 PAMS System Module Technical Documentation Functional Description Power Distribution In normal operation the baseband is powered from the phone‘s battery. The battery consists of three Nickel Metal Hydride cells. There is also a possibility to use batteries consisting of one Lithium–Ion cell. An external charger can be used for recharging the battery and supplying power to the phone.
PAMS NSE–6 System Module Technical Documentation Battery charging The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the charger input. At phone end there is no difference between a plug–in charger or a desktop charger. The DC–jack pins and bottom connector charging pads are connected together inside the phone. MAD LIM VOUT 0R22 RSENSE 1.
NSE–6 PAMS System Module Technical Documentation Battery Overvoltage Protection Output overvoltage protection is used to protect phone from damage. This function is also used to define the protection cutoff voltage for different battery types (Li or Ni). The power switch is immediately turned OFF if the voltage in VOUT rises above the selected limit VLIM1 or VLIM2. Parameter Symbol LIM input Min Typ Max Unit Output voltage cutoff limit (during transmission or Li– battery) VLIM1 LOW 4.4 4.
PAMS NSE–6 System Module Technical Documentation Battery Removal During Charging Output overvoltage protection is also needed in case the main battery is removed when charger connected or charger is connected before the battery is connected to the phone. With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS turns switch OFF until the charger input has sunken below Vpor (nominal 3.0V, maximum 3.4V).
NSE–6 PAMS System Module Technical Documentation Different PWM Frequencies ( 1Hz and 32 Hz) When a travel charger (2– wire charger) is used, the power switch is turned ON and OFF by the PWM input when the PWM rate is 1Hz. When PWM is HIGH, the switch is ON and the output current Iout = charger current – CHAPS supply current. When PWM is LOW, the switch is OFF and the output current Iout = 0. To prevent the switching transients inducing noise in audio circuitry of the phone soft switching is used.
PAMS NSE–6 System Module Technical Documentation Battery Identification Different battery types are identified by a pulldown resistor inside the battery pack. The BSI line inside transceiver has a 100k pullup to VBB. The MCU can identify the battery by reading the BSI line DC–voltage level with a CCONT (N100) A/D–converter. BVOLT BATTERY VBB 2.8V TRANSCEIVER BTEMP 100k BSI Rs 10k CCONT BSI 10n BGND MAD SIMCardDetX The battery identification line is used also for battery removal detection.
NSE–6 PAMS System Module Technical Documentation Battery Temperature The battery temperature is measured with a NTC inside the battery pack. The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU can calculate the battery temperature by reading the BTEMP line DC– voltage level with a CCONT (N100) A/D–converter. BVOLT BATTERY TRANSCEIVER VREF 1.
PAMS NSE–6 System Module Technical Documentation The RTC backup is rechargable polyacene battery, which has a capacity of 50uAh (@3V/2V) The battery is charged from the main battery voltage by the CHAPS when the main battery voltage is over 3.2V. The charging current is 200uA (nominal).
NSE–6 PAMS System Module Technical Documentation Switched Mode Supply VSIM There is a switched mode supply for SIM–interface and 5V regulator, which supplies to RF section. SIM voltage is selected via serial IO. The 5V SMR can be switched on independently of the SIM voltage selection, but can’t be switched off when VSIM voltage value is set to 5V. NOTE: VSIM and V5V can give together a total of 30mA. In the next figure the principle of the SMR / VSIM–functions is shown.
PAMS NSE–6 Technical Documentation System Module Power up with a charger When the charger is connected CCONT will switch on the CCONT digital voltage as soon as the battery voltage exeeds 3.0V. The reset for CCONT’s digital parts is released when the operating voltage is stabilized ( 50 us from switching on the voltages). Operating voltage for VCXO is also switched on. The counter in CCONT digital section will keep MAD in reset for 62 ms (PURX) to make sure that the clock provided by VCXO is stable.
NSE–6 PAMS System Module Technical Documentation Power Up by IBI IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr is an internal signal from the CCONT digital section. Acting Dead If the phone is off when the charger is connected, the phone is powered on but enters a state called ”acting dead”. To the user the phone acts as if it was switched off.
PAMS NSE–6 Technical Documentation System Module The battery voltage, temperature, size and current are measured by the CCONT controlled by the charging software running in the MAD. The power management circuitry controls the charging current delivered from the charger to the battery. Charging is controlled with a PWM input signal, generated by the CCONT. The PWM pulse width is controlled by the MAD and sent to the CCONT through a serial data bus.
NSE–6 PAMS System Module Technical Documentation Audio control The audio control and processing is taken care by the COBBA–GJ, which contains the audio and RF codecs, and the MAD2, which contains the MCU, ASIC and DSP blocks handling and processing the audio signals. A detailed audio specification can be found from document MAD COBBA Bias + EMC Preamp Premult. MIC2 MICP/N Headset connector Slide DSP Pre & LP MIC3 EMC + Acc. Interf. MCU Multipl.
PAMS NSE–6 System Module Technical Documentation External Audio Connections The external audio connections are presented in figure below. A headset can be connected directly to the system connector. The headset microphone bias is supplied from COBBA AUXOUT output and fed to microphone through XMIC line. The 330ohm resistor from SGND line to AGND provides a return path for the bias current. 2.8 V Baseband 47k 22k HookDet MAD 22k HeadDet 1M CCONT 1u EAD 100n 2.
NSE–6 PAMS System Module Technical Documentation Analog Audio Accessory Detection In XEAR signal there is a 47 kW pullup in the transceiver and 6.8 kW pull–down to SGND in accessory. The XEAR is pulled down when an accessory is connected, and pulled up when disconnected. The XEAR is connected to the HookDet line (in MAD), an interrupt is given due to both connection and disconnection. There is filtering between XEAR and HookDet to prevent audio signal giving unwanted interrupts.
PAMS NSE–6 System Module Technical Documentation Internal Audio Connections The speech coding functions are performed by the DSP in the MAD2 and the coded speech blocks are transferred to the COBBA–GJ for digital to analog conversion, down link direction. In the up link direction the PCM coded speech blocks are read from the COBBA–GJ by the DSP. There are two separate interfaces between MAD2 and COBBA–GJ: a parallel bus and a serial bus.
NSE–6 PAMS System Module Technical Documentation Alert Signal Generation A buzzer is used for giving alerting tones and/or melodies as a signal of an incoming call. Also keypress and user function response beeps are generated with the buzzer. The buzzer is controlled with a BuzzerPWM output signal from the MAD. A dynamic type of buzzer must be used since the supply voltage available can not produce the required sound pressure for a piezo type buzzer.
PAMS NSE–6 System Module Technical Documentation – AccIF(Accessory Interface) – SCU (Synthesizer Control Unit for controlling 2 separate synthesizer) – UIF (Keyboard interface, serial control interface for COBBA PCM Codec, LCD Driver and CCONT) – SIMI (SimCard interface with enhanched features) – PUP (Parallel IO, USART and PWM control unit for vibra and buzzer) The MAD2 operates from a 13 MHz system clock, which is generated from the 13Mhz VCXO frequency.
NSE–6 PAMS System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
PAMS NSE–6 System Module Technical Documentation Pin N:o Pin Name Pin Type J2 JTDO O K1 GND K2 JTRst I Input, pulldown pulldown PD0201 JTAG reset K4 JTClk I Input pulldown PD0201 JTAG Clock K3 JTDI I Input, pullup pullup PR0201 JTAG data in L1 JTMS I Input, pullup pullup PR0201 JTAG mode select L2 VCC IO VCC in 3325c10 Power L3 CoEmu0 I/O 2 Input, pullup pullup PR0201 DSP/MCU emulation port 0 L4 CoEmu1 I/O 2 Input, pullup pullup PR0201 DSP/MCU emulation po
NSE–6 PAMS System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
PAMS NSE–6 System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSE–6 PAMS System Module Technical Documentation Pin N:o Pin Name P15 SCVCC P16 RFClk P17 RFClkGnd N15 SIMCardDetX N16 SCGND N17 BuzzPWM M15 LEADVCC M16 VibraPWM M17 GND L14 MCUGenIO3 I/O EEPROM 2 Input, pullup pullup PR1001 WP L15 MCUGenIO2 I/O EEPROM 2 Input, pullup pullup PR1001 SCL L16 EEPROMSelX O MCU EEPROM 2 1 L17 AccTxData I/O 4 Tri– State K17 VCC K14 GenDet I Input General purpose interrupt K15 HookDet I Input Non–MBUS accessory connecti
PAMS NSE–6 System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSE–6 PAMS System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from B14 PCMRxData I COBBA Input Receive data, RX A14 PCMDClk I COBBA Input Transmit clock, CLKX C13 PCMSClk I COBBA Input Transmitframe sync, FSX B13 COBBADAX I COBBA Input Data available acknowledge A13 GND C12 COBBAWrX O COBBA 2 1 COBBA write strobe B12 COBBARdX O COBBA 2 1 COBBA read strobe A12 COBBAClk O COBBA 4 1 COBBA clock, 13 MHz D11 COBBAAd3 O COBBA 2
PAMS NSE–6 System Module Technical Documentation Pin N:o Pin Name Pin Type D7 VCC A6 DSPGenOut4 O B6 DSPGenOut3 O C6 DSPGenOut2 A5 Connected to/from Drive req.
NSE–6 PAMS System Module Technical Documentation Memories The MCU program code resides in an external flash program memory, which size is 16 Mbits (1024kx16bit). The MCU work (data) memory size is 2Mbits (128kx16bit). A serial EEPROM is used for storing the system and tuning parameters, user settings and selections, a scratch pad and a short code memory. The EEPROM size is 256kbits (32kx8bit).
PAMS NSE–6 Technical Documentation System Module Flash Programming The preprogrammable phone has to be connected to the flash loading adapter (FLA–5) via modular cable (XCM–5). When FLA–5 switches supply voltage to the service box (JBU–5), a short pulse (IBI pulse) is generated to the power supply circuit via BTEMP line. The power supply circuit (N100) switches power on and releases MCU (MAD2) from reset state (power up reset, PURX rises up to 1 (2.8 V).
NSE–6 PAMS System Module Technical Documentation Real Time Clock Requirements for a real time clock implementation are a basic clock (hours and minutes), a calender and a timer with alarm and power on/off –function and miscellaneous calls. The RTC will contain only the time base and the alarm timer but all other functions will be implemented with the MCU software. The RTC needs a power backup to keep the clock running when the phone battery is disconnected.
PAMS NSE–6 System Module Technical Documentation IBI Accessories All accessories which can be connected between the transceiver and the battery or which itself contain the battery, are called IBI accessories. Either the phone or the IBI accessory can turn the other on, but both possibilities are not allowed in the same accessory. Phone Power–on by IBI IBI accessory can power the phone on by pulling the BTEMP line up to 3 V.
NSE–6 PAMS System Module Technical Documentation RF Module This RF module takes care of all RF functions of the engine. RF circuitry is located on one side (B–side) of the 6 layer PCB. PCB area for the RF circuitry is about 40 x 50 mm. EMC leakage is prevented by using a metal B–shield, which screens the whole engine. The metal gasket is used between the PCB and the shield.
PAMS NSE–6 Technical Documentation System Module Power Distribution Diagram The power supply is based on the ASIC circuit CCONT. The chip consists of regulators and control circuits providing functions like power up, reset and watchdog. External buffering is required to provide more current on some blocks. The MCU and the CCONT circuits control charging together, detection being carried out by the CCONT and higher level intelligent control by the MCU.
1.35 A PA NSE–6 VBATT BATTERY System Module Page 3 – 48 3.6 V TXP VXOENA SYNPWR RXPWR TXPWR VR 1 VR 2 VR 3 VR 4 VR 5 VR 6 VR 7 VREF V5V 0.1 mA 18 mA VCTCXO BUFFER CRFU, SUMMA PLLs VSYN_2 51 mA CRFU, SUMMA VRX VREF_1 VREF_2 19.5 mA VCOs BUFFERS VSYN_1 VTX PLUSSA CRFU COBBA ANAL. 1 mA CHARGE PUMPs VCP PAMS Original 08/98 VXO NOT USED Technical Documentation 84 mA 2.
PAMS NSE–6 Technical Documentation System Module DC Characteristics Regulators Transceiver has got a multi function power management IC, which contains among other functions, also 7 pcs of 2.8 V regulators. All regulators can be controlled individually with 2.8 V logic directly or through control register. In GSM direct controls are used to get fast switching, because regulators are used to enable RF–functions. Use of the regulators can be seen in the power distribution diagram. CCONT also provides 1.
NSE–6 PAMS System Module Technical Documentation tor. Phase detector compares this signal to reference signal, which is divided with reference divider from VCTCXO output. Output of the phase detector is connected into charge pump, which charges or discharges integrator capacitor in the loop filter depending on the phase of the measured frequency compared to reference frequency. Loop filter filters out the pulses and generates DC to control the frequency of UHF–VCO.
PAMS NSE–6 Technical Documentation System Module Receiver Receiver is a dual conversion linear receiver. Received RF–signal from the antenna is fed via the duplex filter to LNA (low noise amplifier ) in CRFU_1a. Active parts ( RF–transistor and biasing and AGC–step circuitry ) are integrated into this chip. Input and output matching networks are external. Gain selection is done with PDATA0 control. Gain step in LNA is activated when RF–level in antenna is about –45 dBm.
NSE–6 PAMS System Module Technical Documentation Transmitter Transmitter chain consists of IQ–modulator, upconversion mixer, power amplifier and there is a power control loop. I– and Q–signals are generated by baseband also in COBBA–ASIC. After post filtering ( RC–network ) they go into IQ–modulator in SUMMA. It generates modulated TX IF–frequency, which is VHF–synthesizer output divided by two, meaning 116 MHz. There is also an AGC–amplifier in SUMMA, but it is not used in GSM.
PAMS NSE–6 System Module Technical Documentation Because dynamic range of the detector is not wide enough to control the power ( actually RF output voltage ) over the whole range, there is a control named TXP to work under detected levels. Burst is enabled and set to rise with TXP until the output level is high enough, that feedback loop works. Loop controls the output via the control pin in PA MMIC to the desired output level and burst has got the waveform of TXC–ramps.
NSE–6 PAMS System Module Technical Documentation AGC strategy AGC–amplifier is used to maintain output level of the receiver almost constant. AGC has to be set before each received burst, this is called pre–monitoring. Receiver is switched on roughly xxx us before the burst begins, DSP measures received signal level and adjusts RXC, which controls RX AGC–amplifier or it switches off the LNA with PDATA0 control line. This pre–monitoring is done in three phases and this sets the settling times for RX AGC.
PAMS NSE–6 System Module Technical Documentation AFC function AFC is used to lock the transceivers clock to frequency of the base station. AFC–voltage is generated in COBBA with 11 bit AD–converter. There is a RC–filter in AFC control line to reduce the noise from the converter. Settling time requirement for the RC–network comes from signalling, how often PSW ( pure sine wave ) slots occur. They are repeated after 10 frames , meaning that there is PSW in every 46 ms.
NSE–6 PAMS System Module Technical Documentation Transmitter Blocks TX interstage filter Parameter Min. Typ. Passband Max. Unit 890 – 915 Insertion loss MHz 3.3 dB Power amplifier module Parameter Symbol Test condition Min Operating freq. range Supply voltage Typ 880 Vcc 3.0 Gain control range ( overall dynamic range) Vpc= 0.5 ... 2.2 V 3.5 Max Unit 915 MHz 5.0 V 45 dB Synthesizer blocks VHF VCO and low pass filter Parameter Supply voltage range Min. Typ. Max. 2.7 2.
PAMS NSE–6 System Module Technical Documentation UHF VCO module Parameter Conditions Rating Supply voltage, Vcc Unit/ Notes 2.8 +/– 0.1 V Supply current, Icc Vcc = 2.8 V, Vc= 2.25 V < 10 mA Control voltage, Vc Vcc = 2.8 V 0.8... 3.7 V Oscillation frequency Vcc = 2.8 V Vc = 0.8 V Vc = 3.7 V < 1006 > 1031 MHz MHz f = 1018.5 MHz 2.25 +/– 0.25 V Tuning voltage in center frequency Tuning voltage sensitivity in operating frequency range on each spot freq. Vcc = 2.8 V f=1006...
NSE–6 PAMS System Module Signal name TX PWR From MAD Technical Documentation To CCONT Parameter VR7 in CCONT ON Logic low ”0” 0 0.8 V VR7 in CCONT OFF Voltage 1.478 1.5 1.523 V Reference voltage for SUMMA and CRFU1a 2.0 2.85 V Nominal gain in LNA Logic low ”0” 0 0.8 V Reduced gain in LNA Logic high ”1” 2.0 2.85 V PLL enable Logic low ”0” 0 0.8 V Logic high ”1” 2.0 2.85 V Logic low ”0” 0 0.8 V Logic high ”1” 2.0 2.85 V Logic low ”0” 0 0.8 V Voltage 0.
PAMS NSE–6 System Module Technical Documentation Signal name TXC RXC From COBBA COBBA Original 08/98 To SUMMA SUMMA Parameter Minimum Typical Maximum Unit Voltage Min 0.12 0.18 V Voltage Max 2.27 2.33 V Voltage Min 0.12 0.18 V Voltage Max 2.27 2.
NSE–6 PAMS System Module Technical Documentation Timings Synthesizer control timing 6.9 ms ( 1.5 x 4.6 ms ( frame ) 100 us min. 10 us min. 10 us min. 10 us min. 10 us min. 8 us RXPWR SYNTHPWR 2us min SENA SDATA/ SCLK #bits MODE VHF R VHF N/A UHF R UHF N/A 23 23 23 23 23 Synthesizer Start–up Timing / clocking MON 20 ms VXOENA SYNTHPWR RX MON RX MON 4.6 ms RX MON RX 0.5–2 sec. 6.
PAMS NSE–6 System Module Technical Documentation In case of long list of adjacent channels, there might be two monitoring– bursts/frame. Extra monitoring ”replaces” TX–burst. MON 20 ms RX MON MON RX MON MON RX MON MON RX 0.5–2 sec. 4.6 ms 6.
NSE–6 PAMS System Module Technical Documentation Transmitter power switching timing diagram 542.8 us Pout 8.3..56.7 us TXC TXP 0...56.7 us 0...58 us TXPWR 150 us 50 us Transmitter power switching timing diagram for normal bursts Synthesizer clocking Synthesizers are controlled via serial control bus, which consists of SDATA, SCLK and SENA1 signals. These lines form a synchronous data transfer line. SDATA is for the data bits, SCLK is 3.
PAMS NSE–6 System Module Technical Documentation Parts list of US8 (EDMS Issue 7.
NSE–6 PAMS System Module R268 R271 R272 R274 R275 R281 R282 R301 R302 R303 R304 R305 R310 R311 R331 R332 R333 R335 R337 R339 R341 R350 R351 R352 R401 R450 R500 R501 R502 R503 R505 R506 R507 R540 R541 R542 R543 R544 R545 R600 R601 R602 R603 R604 R605 R620 R622 1430754 1430700 1430700 1430770 1430770 1430792 1430798 1825009 1825009 1430710 1825003 1825003 1430784 1430784 1620031 1430754 1620031 1620031 1620031 1620031 1430690 1413829 1413829 1413829 1430778 1825009 1430778 1430740 1430700 1430700 1430760
PAMS NSE–6 System Module Technical Documentation R623 R624 R625 R627 R628 R629 R640 R641 R660 R661 R662 R663 R700 R703 R704 R705 R706 R707 R708 R709 R740 R742 R743 R745 R746 R748 R749 R760 R761 R762 R780 C100 C101 C102 C103 C104 C105 C106 C107 C108 C109 C110 C111 C112 C113 C117 C120 1430832 1430738 1430710 1430710 1430744 1430762 1430700 1430734 1430788 1430762 1430812 1430762 1430748 1430740 1430758 1430740 1430740 1430764 1430764 1430722 1430758 1430762 1430776 1430848 1430848 1430848 1430848 1430714
NSE–6 PAMS System Module C121 C123 C124 C125 C128 C129 C130 C131 C132 C133 C140 C141 C143 C144 C145 C148 C149 C151 C152 C200 C201 C202 C203 C212 C213 C220 C230 C240 C241 C251 C252 C254 C255 C257 C260 C261 C262 C263 C266 C268 C269 C270 C271 C272 C274 C275 C280 2320620 2320544 2320560 2320544 2312401 2312401 2610003 2610003 2312405 2610003 2312401 2320560 2312401 2312401 2312401 2312401 2312401 2320546 2320546 2320620 2320620 2320620 2320620 2312401 2320584 2320620 2320620 2320620 2320620 2320620 2312295
PAMS NSE–6 System Module Technical Documentation C281 C282 C283 C291 C292 C301 C302 C303 C304 C305 C306 C307 C308 C310 C330 C331 C332 C333 C334 C335 C336 C337 C338 C339 C340 C341 C342 C343 C344 C405 C500 C501 C502 C503 C504 C505 C506 C507 C508 C509 C510 C511 C512 C513 C514 C515 C517 2320620 2320620 2320620 2320546 2320546 2320544 2320544 2320576 2320576 2320576 2320576 2320544 2320544 2312401 2320560 2320560 2320560 2320560 2320560 2320560 2320560 2320560 2320560 2320560 2320560 2320560 2320560 2320779
NSE–6 PAMS System Module C518 C541 C542 C543 C600 C601 C602 C603 C604 C610 C620 C621 C622 C623 C624 C625 C626 C627 C640 C641 C642 C660 C661 C662 C663 C664 C700 C701 C702 C704 C705 C706 C707 C708 C709 C711 C720 C742 C743 C744 C745 C746 C760 C761 C763 C780 C781 2320524 2320560 2320752 2310784 2320546 2320544 2310181 2320554 2320546 2611677 2310248 2320560 2320584 2320544 2320546 2320540 2312401 2610023 2312401 2312401 2312401 2320620 2312401 2320584 2320540 2320584 2320524 2320107 2320620 2320546 2610023
PAMS NSE–6 Technical Documentation C782 C783 C784 L103 L104 L105 L307 L308 L500 L501 L502 L503 L504 L505 L620 L621 L660 L700 L701 L760 L761 L780 B101 B301 G600 G660 F100 Z300 Z301 Z303 Z304 Z305 Z306 Z400 Z500 Z501 Z502 Z540 Z700 V100 V116 V120 V250 V301 V320 V321 V322 2320534 2320546 2320546 3203701 3203701 3203701 3203709 3203709 3645123 3645131 3641622 3641622 3608326 3645017 3645183 3645161 3648808 3645121 3203705 3641622 3641622 3203709 4510219 5140087 4350143 4510217 5119019 3640035 3640035 364003
NSE–6 PAMS System Module Technical Documentation V323 V324 V325 V336 V343 4860005 4860005 4860005 4110089 4100278 Led Led Led Diode x 2 Diode x 2 V620 V621 V660 V700 V780 D200 D220 D230 D240 D402 N100 N101 N202 N250 N310 N500 N540 N700 N701 S100 S330 S331 S332 X303 X452 4110062 4210066 4210100 4110014 4112464 4370383 4340295 4346015 4340527 4340369 4370393 4370165 4340435 4370371 4370433 4370253 4370351 435X106 4551001 520Y015 5219005 5219005 5219005 5469081 5409073 9854297 0201225 Cap.
