User Guide

PAMS
Technical Documentation
NSE–6
Disassembly & Troubleshooting Instructions
Page 37
Original 08/98
J231 MCURDX 0
1
0
2.0
0.5
2.85
V MCU read strobe
J232 VB 3.0 5.3 V Battery voltage
J233 MCUWRX 0
1
0
2.0
0.5
2.85
V MCU write strobe
J234 ROM1SELX 0
1
0
2.0
0.5
2.85
V Flash memory select
J235 RAMSELX 0
1
0
2.0
0.5
2.85
V Sram memory select
J236 CCONCSX 0
1
0
2.0
0.8
2.85
V Chip select for CCONT from MAD2. Ac-
tive low. Pulses 1––>0 every 8 sec, if
software is running
J250 GND 0 0 V
J251 AGND 0 0 V
J252 VSIM (5V)
(3V)
4.8
2.8
5.2
3.2
V SIM supply voltage
J253 VSRM 5.2 5.5 V Supply voltage for flash programming
regulator N201 from CCONT (N100)
J254 SGND 0 0 V
J254 –
J255 FBUS_RX 0
1
0
2.0
0.8
2.85
V Data input from external device, data
from IR to MCU module, and data from
flash prommer to MCU.
J256 FBUS_TX 0
1
0
2.0
0.5
2.85
V Data output for external device, data
from MCU to IR module, and data to
flash prommer.
J257 8KHZ 0
1
0
2.15
0.5
2.85
V 8 KHz frame sync
J261 MICP 4.1 mV Internal microphone positive pole
J262 MICN 4.1 mV Internal microphone negative pole
J780 (VDDTXMIX)
VBB 2.7 2.85 V Baseband main voiltage
VXO 2.7 2.85 V VCTCXO voltage (13 MHz clock)
RFCLK 0.5 Vpp 13 Mhz clock for baseband and RF