User Guide

NSB-5
System Module PAMS Technical Documentation
Page 54 Nokia Mobile Phones Ltd. Issue 1 03/01
NOTE 1: Characteristics above are NOT valid if VBAT < 3.0V.
NOTE 2: Line regulation is 20dB for f<100kHz when battery voltage is lower than 3.1V.
NOTE 3: The 220nF can be divided into two capacitors; one as close to CCONT as possible, the other
next to the RF parts.
NOTE 4: If the output current is less than 10mA, a 1uF is required to ensure stability.
Functional Description
RF Block Diagram
Refer to |4| which is the RF block diagram in Design Architect format. The related com-
ponent number is referenced to (..), so it is easier to locate that specific component.
As can been seen from the RF block diagram, most of the functions have been integrated
into three ASICs. CRFU_2a (N600) is a wideband UHF ASIC with both receiver and trans-
mitter functions.
The receiver functions include LNA and two downconversion mixers (Gilbert cell) with LO
buffers. The transmitter functions include an upconversion mixer (image rejection) with
LO buffer. All inputs/outputs are wideband and require external matching networks for
Line regulation F v 10kHz 49 dB
Line regulation F v 100kHz 40 dB
Load regulation
T = 25
o
C
0.6 1 mV/mA
Rise time (1% to 99%),
50mA, depends on load
voltage reference/bias
already ON, VR1 - VR7
Turn-on 6 70 ms
Overshoot C = 1µF, turn on/off 3 %
Settling time (to 0.1% of
nominal), 50 mA, depends
on load, voltage refer-
ence/bias already ON
C = 1µF, turn on from
CNTVRx rise
6ms
Phase margin C = 1µF45
o
Total noise density 200 nVrms/pHz
Short-circuit current.
Note: The chip does not
tolerate continuous
short-circuit current.
output shorted to ground 250 350 mA
Supply current (each reg-
ulator)
ON mode I
out
/
60+330
I
out
/
10+540
mA
Table 17: RF regulator specifications
Characteristics Condition Min Typ Max Unit