User Guide

NSB-5
System Module PAMS Technical Documentation
Page 46 Nokia Mobile Phones Ltd. Issue 1 03/01
Memories
The MCU program code resides in an external program memory, size is 16Mbits. MCU
work (data) memory size is 1Mbits. A special block in the flash is used for storing the sys-
tem and tuning parameters, user settings and selections, a scratch pad, and a short code
memory.
Separate EEPROM memories formerly used to store non-volatile data have been removed
and replaced by dedicated, write-protected blocks in flash memory. This flash solution
gives a cost and size benefit in products where large EEPROM sizes are required.
The BusController (BUSC) section in the MAD2WD1 decodes the chip select signals for
the external memory devices and the system logic. BUSC controls internal and external
bus drivers and multiplexers connected to the MCU data bus. The MCU address space is
divided into access areas with separate chip select signals. BUSC supports a programma-
45 VBACK P backup battery backup battery input
46 CRA I crystal for 32 kHz sleep clock
47 CRB I crystal for 32 kHz sleep clock
48 SLCLK O sleep clock output
49 DATACLK I High Z MAD2WD1 bus clock
50 DATASELX I High Z MAD2WD1 bus enable
51 DATA_IN/OUT I/O High Z MAD2WD1 bus serial data
52 CCONTINT O “0” CCONT interrupt output
53 TEST I GND test pin
(ground=>normal operation)
54 PURX O “0” power up reset signal
55 VBB O 2.8V baseband regulator output
56 PWMOUT O “0” PWM out (3/0V)
57 VBAT P unregulated supply voltage (VBB,
V2V, ADC, 32kHz)
58 GROUND P (VBB, V2V, ADC, 32kHz)
59 V2V O 1.975V MAD2WD1 core regulator output
60 VCHAR I charger voltage
61 VCXOTEMP I VCXO-temperature
62 BSI I battery type input
63 BTEMP I battery temperature input
64 EAD I external accessory detection
Table 12: CCONT 3V pin assignment
Pin Symbol Type State in Reset Description