User Guide

PAMS Technical Documentation System Module
NSB-5
Issue 1 03/01 Nokia Mobile Phones Ltd. Page 17
VSIM supply voltages are specified to meet type approval requirements regardless of the
tolerances in components.
Infrared Transceiver Module
An infrared transceiver module is designed as a substitute for hardwired connections
between the phone and a PC. The infrared transceiver module is a stand alone compo-
nent. In DCT3 the module is located inside and at the top of the phone.
The Rx and Tx is connected to the FBUS via a dual bus buffer. The module and buffer is
activated from the MAD2 with a pull up on IRON. The Accif in MAD2 performs pulse
encoding and shaping for transmitted data pulses and detection and decoding for
received data pulses.
The data is transferred over the IR link using serial FBUS data at speeds 9.6, 19.2, 38.4,
57.6 or 115.2 kbits/s, which leads to maximum throughput of 92.160 kbits/s. The used IR
module complies with the IrDA SIR specification (Infra Red Data Association), which is
based on the HP SIR (Hewlett–Packard‘s Serial Infra Red) concept.
2 VSIM 5V SIM Card
3V SIM Card
4.8
2.8
5.0
3.0
5.2
3.2
V Supply voltage
3DATA5V Vin/Vout
3V Vin/Vout
4.0
0
2.8
0
“1”
“0”
“1”
“0”
VSIM
0.5
VSIM
0.5
V SIM data
Trise/Tfall max 1 us
4 SIMRST 5V SIM Card
3V SIM Card
4.0
2.8
“1”
“1”
VSIM
VSIM
V SIM reset
5SIMCLK Frequency
Trise/Tfall
3.25
25
MHz
ns
SIM clock
6 VPP 5V SIM Card
3V SIM Card
4.8
2.8
5.0
3.0
5.2
3.2
V Programming voltage
pin6 and pin2 tied
together
Table 4: SIM Connector Electrical Specifications
Pin Name Parameter Min Typ Max Unit Notes