User Guide

PAMS Technical Documentation
3. System Module
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Signal
Name
DAMPS/
GSM1900
Connected
from-- to
I/O
Signal Properties
A/D--Levels---Freq./
Timing resolution
Description / Notes
MEMADDA(23:0) External Memory Addr/Data Bus
0-
15
EXTADD
A 0:15
Memory UPP
In/Ou
Dig 0/1.8 V 25 / 150 ns Burst Flash Address (0:15) & Data (0:15)
Direct Mode Address (0:7)
16-
23
EXTAD
16:23
Memory UPP
In
Dig 0/1.8 V 25 / 150 ns Burst Flash Address (16:23)
Direct Mode Data (8:15)
MEMCONT(8:0) External Memory Control Bus
0 ExtWrX Memory
_WE
UPP In Write Strobe
1 ExtRdX Memory
_OE
UPP In Read Strobe
2
3
(FlsBAAX)
VPPCTRL
Memory
(VPP)
UPP In VPP=1.8V ,=> VIO used internally for VPP
VPP=5/12V, VPP used
4FlsPS
Memory
PS
UPP
In/
Out
25 ns
Burst Mode Flash Data Invert
Direct Mode Address (17)
5 FlsAVDX Memory
_AVD
UPP In Flash Addr Data Valid/ Latch Burst Addr
Direct Mode Address (18)
6 FlsCLK Memory
CLK
UPP In
50 MHz
Burst Mode Flash Clock
Direct Mode Address (19)
7FlsCSX
Memory
_CE
UPP In Flash Chip Select
8 FlsRDY Memory
RDY
UPP Out Ready Signal for Flash
9 FlsRSTX Memory
_RP
UPP Out
Dig 0/1.8 V
Flash reset, 0 active, (FLSRPX)
GENIO(28:0) General I/O Pin used for extra control
23
FLSWRPX
Memory
_WP
UPP Out Dig 0/1.8 V
O
Write Protect, 0-active protected
Globals Power supplies and production test pad
VIO UEM FLASH In
PWR
1.8 V FLASH power supply
VPP
Prod TP 6
FLASH In
Vpp
0/(1.8)
/5/12V
FLASH Programming/erasing
voltage/control. 5 or 12 V external voltage
for high speed programming
GND Global GND