User Guide

PAMS Technical Documentation System Module
NPE-3
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Table 2. AC and DC Characteristics of RF/BB signal
10
kΩ
Load DC resistance to GND (Accessory) pin #14
16 1500
Ohm
Load DC resistance to GND (Headset) pin #14
2.8 V DC voltage (47k pull-up to VBB)
HEAR 0 14 220
mV
Earphone signal
Connected to COBBA_GJP HF output
11 MBUS 0
2.0
0.8
2.8
V Serial bidirectional control bus.
Baud rate 9600 Bit/s
Phone has 4.7kΩ pull up resistor
12 FBUS_RX 0
2.0
0.8
2.8
V Fbus receive. Serial Data
Baud rate 9.6k-230.4kBit/s
Phone has 220kΩ pull down resistor
13 FBUS_TX 0.1
1.7
0.8
2.8
V Fbus transmit. Serial Data
Baud rate 9.6k-230.4kBit/s
Phone has 47kΩ pull up resistor
14 GND 0 0 V Supply ground
Signal name From
Parameter
Min
Typ Max
Unit Function
1. VBAT-TRF BATTERY
Voltage
3.0
3.6 5.0/
6.0
V Supply volt-
age for RF PA
Current 2500
mA PA current
2. VREF CCONT
Voltage
1.478
1.5 1.523
VUsed in
HAGAR for
the 1.35V ref-
erence.
Current 100
uA
Source resis-
tance
10
ohm
3. SLE MAD2WD1
SynthEna
Logic high ”1”
2.0
2.8
V Serial enable,
prog HAGAR
PCN/GSM
TX/RX and
synth.