PAMS Technical Documentation NSE–3 Series Transceivers Chapter 3 System Module Original 11/97
NSE–3 System Module PAMS Technical Documentation CONTENTS Transceiver NSE–3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Interconnection Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . System Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAMS Technical Documentation Audio control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . External Audio Connections . . . . . . . . . . . . . . . . . . . . . . . Analog Audio Accessory Detection . . . . . . . . . . . . . . . . . Headset Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internal Audio Connections . . . . . . . . . . . . . . . . . . . . . . . . 4–wire PCM Serial Interface . . . . . . . . . . . . . . . . . . . . . . . Alert Signal Generation . .
NSE–3 System Module PAMS Technical Documentation Transmitter Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TX interstage filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power amplifier MMIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Synthesizer blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VHF VCO and low pass filter . . . . . . . . . . . . . . . . . . . . . . . . UHF PLL . . . . . . . . . . . . . . . . . . .
PAMS NSE–3 Technical Documentation System Module Transceiver NSE–3 Introduction The NSE–3 is a radio transceiver unit designed for the GSM network. It is a GSM phase 2 power class 4 transceiver providing 15 power levels with a maximum output power of 2 W. The transceiver is a true 3 V transceiver. The transceiver consists of System/RF module (UP8T), User interface module (UE4) and assembly parts. The transceiver has full graphic display and two soft key based user interface.
NSE–3 PAMS System Module Technical Documentation Interconnection Diagram Keypad 10 9 User Interface Module UE4 Display 2 Earpiece 28 SIM Antenna 6 4 System/RF Module UP8 1 2 6 Mic 3+3 2 2 System Connector Charger RF Connector Page 3 – 6 Battery IR Link Original 11/97
PAMS NSE–3 System Module Technical Documentation System Module External and Internal Connectors Rubber boot Microphone Solderable element, 2 pcs Contact 1 DC–jack Contact 2 Microphone port Original 11/97 Contacts 3...
NSE–3 PAMS System Module Technical Documentation System Connector Contacts Contact Line Symbol Parameter Minimum 1 VIN Charger input volt- 7.1 age 720 Charger input cur- 7.24 rent 320 DC– JACK L_GND Charger ground input DC– JACK VIN Charger input volt- 7.1 age 720 Charger input cur- 7.24 rent 320 DC– JACK CHRG CTRL Output high voltage PWM frequency output low voltage 2 CHRG CTRL Mic ports 0 Typical / Nominal Maximum Unit / Notes 8.4 800 7.6 370 9.3 850 16.
PAMS NSE–3 System Module Technical Documentation RF Connector Contacts Contact 1 2 Line Symbol Parameter Minimum Typical / Nominal EXT_ANT Impedance Im edance GND 50ohm Maximum Unit / Notes External antenna connector tor, 0 V DC Supply Voltages and Power Consumtion Connector Line Symbol Minimum Typical / Nominal Maximum/ Peak Unit / Notes Charging VIN 7.1 8.4 9.3 V/ Travel charger, ACP–9 Charging VIN 7.25 7.6 16.0 V/ Travel charger.
NSE–3 PAMS System Module Technical Documentation Baseband Module Block Diagram TX/RX SIGNALS RF SUPPLIES PA SUPPLY 13MHz SYSTEM CLOCK CLK COBBA SUPPLY CCONT COBBA SIM BB SUPPLY 32kHz CLK SLEEP CLOCK UI MAD + VBAT MEMORIES IR BATTERY CHAPS AUDIOLINES BASEBAND SYSCON Technical Summary The baseband module consists of four asics, CHAPS, CCONT, COBBA– GJ and MAD2, which take care of the baseband functions of NSE–3. The baseband is running from a 2.
PAMS NSE–3 Technical Documentation System Module The interface between the baseband and the RF section is handled by a specific asic. The COBBA asic provides A/D and D/A conversion of the in–phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals to and from the UI section.
NSE–3 PAMS System Module Technical Documentation Bottom Connector External Contacts Contact Line Symbol Function 1 VIN Charger input voltage DC–jack side contact (DC–plug ring) L_GND Charger ground DC–jack center pin VIN Charger input voltage DC–jack side contact (DC–plug jacket) CHRG_CTRL Charger control output (from phone) 2 CHRG_CTRL Charger control output (from phone) Microphone acoustic ports Acoustic signal (to phone) 3 XMIC Accessory microphone signal input (to phone) 4 SG
PAMS NSE–3 System Module Technical Documentation Pin Name Min 8 XMIC 2.0 Typ Max Unit 2.2 kΩ Input AC impedance 1 Vpp Maximum signal level 1.47 1.55 V Mute (output DC level) 2.5 2.85 V Unmute (output DC level) 100 600 µA Bias current 490 mV Maximum signal level 29.3 mV Microphone signal 58 HMIC 0 3.2 Notes Connected to COBBA MIC3P input 9 10 SGND XEAR 47 Ω Output AC impedance (ref.
NSE–3 PAMS System Module Technical Documentation Battery Connector Pin Name Min Typ Max Unit Notes 1 BVOLT 3.0 3.6 4.5 V Battery voltage 2 BSI 0 50 5.0 Maximum voltage in call state with charger 5.3 Maximum voltage in idle state with charger 2.85 V Battery size indication Phone has 100kohm pull up resistor. SIM Card removal detection (Treshold is 2.4V@VBB=2.8V) 2.
PAMS NSE–3 System Module Technical Documentation SIM Card Connector Pin Name Parameter Min 4 GND GND 0 3, 5 VSIM 5V SIM Card 4.8 3V SIM Card 5V Vin/Vout 6 DATA Max Unit Notes 0 V Ground 5.0 5.2 V Supply voltage 2.8 3.0 3.2 4.0 ”1” VSIM V SIM data 0 ”0” 0.5 2.8 ”1” VSIM 0 ”0” 0.5 5V SIM Card 4.0 ”1” VSIM 3V SIM Card 2.8 ”1” VSIM 3V Vin/Vout 2 1 SIMRST SIMCLK Typ Frequency Trise/Tfall max 1us 3.
NSE–3 PAMS System Module Technical Documentation RTC Backup Battery The RTC block in CCONT needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable polyacene battery that can keep the clock running minimum of 10 minutes. The backup battery is charged from the main battery through CHAPS. Signal VBACK VBACK Parameter Min Typ Max Unit Notes Backup battery charging from CHAPS 3.02 3.15 3.
PAMS NSE–3 System Module Technical Documentation Functional Description Power Distribution In normal operation the baseband is powered from the phone‘s battery. The battery consists of one Lithium–Ion cell. There is also a possibility to use batteries consisting of three Nickel Metal Hydride cells. An external charger can be used for recharging the battery and supplying power to the phone.
NSE–3 PAMS System Module Technical Documentation Battery charging The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the charger input. At phone end there is no difference between a plug–in charger or a desktop charger. The DC–jack pins and bottom connector charging pads are connected together inside the phone.
PAMS NSE–3 System Module Technical Documentation Battery Overvoltage Protection Output overvoltage protection is used to protect phone from damage. This function is also used to define the protection cutoff voltage for different battery types (Li or Ni). The power switch is immediately turned OFF if the voltage in VOUT rises above the selected limit VLIM1 or VLIM2. Parameter Symbol LIM input Min Typ Max Unit Output voltage cutoff limit (during transmission or Li– battery) VLIM1 LOW 4.4 4.6 4.
NSE–3 PAMS System Module Technical Documentation Battery Removal During Charging Output overvoltage protection is also needed in case the main battery is removed when charger connected or charger is connected before the battery is connected to the phone. With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS turns switch OFF until the charger input has sunken below Vpor (nominal 3.0V, maximum 3.4V).
PAMS NSE–3 System Module Technical Documentation Different PWM Frequencies ( 1Hz and 32 Hz) When a travel charger (2– wire charger) is used, the power switch is turned ON and OFF by the PWM input when the PWM rate is 1Hz. When PWM is HIGH, the switch is ON and the output current Iout = charger current – CHAPS supply current. When PWM is LOW, the switch is OFF and the output current Iout = 0. To prevent the switching transients inducing noise in audio circuitry of the phone soft switching is used.
NSE–3 PAMS System Module Technical Documentation Battery Identification Different battery types are identified by a pulldown resistor inside the battery pack. The BSI line inside transceiver has a 100k pullup to VBB. The MCU can identify the battery by reading the BSI line DC–voltage level with a CCONT (N100) A/D–converter. BVOLT BATTERY BTEMP 2.8V TRANSCEIVER 100k BSI Rs 10k CCONT BSI 10n BGND SIMCardDetX MAD The battery identification line is used also for battery removal detection.
PAMS NSE–3 System Module Technical Documentation Battery Temperature The battery temperature is measured with a NTC inside the battery pack. The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU can calculate the battery temperature by reading the BTEMP line DC– voltage level with a CCONT (N100) A/D–converter.
NSE–3 PAMS System Module Technical Documentation The RTC backup is rechargable polyacene battery, which has a capacity of 50uAh (@3V/2V) The battery is charged from the main battery voltage by the CHAPS when the main battery voltage is over 3.2V. The charging current is 200uA (nominal).
PAMS NSE–3 System Module Technical Documentation Switched Mode Supply VSIM There is a switched mode supply for SIM–interface. SIM voltage is selected via serial IO. The 5V SMR can be switched on independently of the SIM voltage selection, but can’t be switched off when VSIM voltage value is set to 5V. NOTE: VSIM and V5V can give together a total of 30mA. In the next figure the principle of the SMR / VSIM–functions is shown.
NSE–3 PAMS System Module Technical Documentation Power up with a charger When the charger is connected CCONT will switch on the CCONT digital voltage as soon as the battery voltage exeeds 3.0V. The reset for CCONT’s digital parts is released when the operating voltage is stabilized ( 50 us from switching on the voltages). Operating voltage for VCXO is also switched on. The counter in CCONT digital section will keep MAD in reset for 62 ms (PURX) to make sure that the clock provided by VCXO is stable.
PAMS NSE–3 Technical Documentation System Module Power Up by RTC RTC ( internal in CCONT) can power the phone up by changing RTCPwr to logical ”1”. RTCPwr is an internal signal from the CCONT digital section. Power Up by IBI IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr is an internal signal from the CCONT digital section. Acting Dead If the phone is off when the charger is connected, the phone is powered on but enters a state called ”acting dead”.
NSE–3 PAMS System Module Technical Documentation dicated by a resistor inside the battery pack. The resistor value corresponds to a specific battery capacity. This capacity value is related to the battery technology as different capacity values are achieved by using different battery technology. The battery voltage, temperature, size and current are measured by the CCONT controlled by the charging software running in the MAD.
PAMS NSE–3 System Module Technical Documentation Audio control The audio control and processing is taken care by the COBBA–GJ, which contains the audio and RF codecs, and the MAD2, which contains the MCU, ASIC and DSP blocks handling and processing the audio signals. A detailed audio specification can be found from document MAD COBBA Bias + EMC Preamp Premult. DSP MIC2 MICP/N Pre & LP System Connector MIC1 EMC + Acc. Interf. MCU Multipl.
NSE–3 PAMS System Module Technical Documentation External Audio Connections The external audio connections are presented in figure 16. A headset can be connected directly to the system connector. The headset microphone bias is supplied from COBBA AUXOUT output and fed to microphone through XMIC line. The 330ohm resistor from SGND line to AGND provides a return path for the bias current. 2.8 V Baseband 47k 22k HookDet MAD 22k HeadDet 1u CCONT EAD 1u 2.
PAMS NSE–3 System Module Technical Documentation Analog Audio Accessory Detection In XEAR signal there is a 47 kW pullup in the transceiver and 6.8 kW pull–down to SGND in accessory. The XEAR is pulled down when an accessory is connected, and pulled up when disconnected. The XEAR is connected to the HookDet line (in MAD), an interrupt is given due to both connection and disconnection. There is filtering between XEAR and HookDet to prevent audio signal giving unwanted interrupts.
NSE–3 PAMS System Module Technical Documentation Internal Audio Connections The speech coding functions are performed by the DSP in the MAD2 and the coded speech blocks are transferred to the COBBA–GJ for digital to analog conversion, down link direction. In the up link direction the PCM coded speech blocks are read from the COBBA–GJ by the DSP. There are two separate interfaces between MAD2 and COBBA–GJ: a parallel bus and a serial bus.
PAMS NSE–3 Technical Documentation System Module Alert Signal Generation A buzzer is used for giving alerting tones and/or melodies as a signal of an incoming call. Also keypress and user function response beeps are generated with the buzzer. The buzzer is controlled with a BuzzerPWM output signal from the MAD. A dynamic type of buzzer must be used since the supply voltage available can not produce the required sound pressure for a piezo type buzzer.
NSE–3 PAMS System Module Technical Documentation – CODER (Block encoding/decoding and A51&A52 ciphering) – AccIF(Accessory Interface) – SCU (Synthesizer Control Unit for controlling 2 separate synthesizer) – UIF (Keyboard interface, serial control interface for COBBA PCM Codec, LCD Driver and CCONT) – SIMI (SimCard interface with enhanched features) – PUP (Parallel IO, USART and PWM control unit for vibra and buzzer) The MAD2 operates from a 13 MHz system clock, which is generated from the 13Mhz VCXO fr
PAMS NSE–3 System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSE–3 PAMS System Module Technical Documentation Pin N:o Pin Name Pin Type 24 JTDO O 25 GND 26 JTRst I Input, pulldown pulldown PD0201 JTAG reset 27 JTClk I Input pulldown PD0201 JTAG Clock 28 JTDI I Input, pullup pullup PR0201 JTAG data in 29 JTMS I Input, pullup pullup PR0201 JTAG mode select 30 VCC IO VCC in 3325c10 Power 31 CoEmu0 I/O 2 Input, pullup pullup PR0201 DSP/MCU emulation port 0 32 CoEmu1 I/O 2 Input, pullup pullup PR0201 DSP/MCU emulation p
PAMS NSE–3 System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSE–3 PAMS System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
PAMS NSE–3 System Module Technical Documentation Pin N:o Pin Name 92 SCVCC 93 RFClk 94 RFClkGnd 95 SIMCardDetX 96 SCGND 97 BuzzPWM 98 LEADVCC 99 VibraPWM 100 GND 101 MCUGenIO3 I/O EEPROM 2 Input, pullup pullup PR1001 General purpose I/O port 102 MCUGenIO2 I/O EEPROM 2 Input, pullup pullup PR1001 WP SCL 103 EEPROMSelX O MCU EEPROM 2 1 104 AccTxData I/O 4 Tri– State 105 VCC 106 GenDet I Input General purpose interrupt 107 HookDet I Input Non–MBUS ac
NSE–3 PAMS System Module Technical Documentation Pin N:o Pin Name Pin Type 112 MBUS I/O 113 VCXOPwr O 114 SynthPwr O 115 VCC 116 GenCCONTCSX 117 LEADGND 118 GenSDIO I/O CCONT, UIF 2 Input, external pullup/ down 119 GenSClk O CCONT, UIF 2 0 Serial clock 120 SIMCardData I/O CCONT 2 0 SIM data 121 GND 122 PURX I CCONT Input Power Up Reset 123 CCONTInt I CCONT Input CCONT interrupt 124 Clk32k I CCONT Input Sleep clock oscillator input 125 VCC 126
PAMS NSE–3 System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
NSE–3 PAMS System Module Technical Documentation Pin N:o Pin Name Pin Type Connected to/from Drive req.
PAMS NSE–3 Technical Documentation System Module Memories The MCU program code resides in an external flash program memory, which size is 8 Mbits (512kx16bit). The MCU work (data) memory size is 512kbits (64kx8bit). A serial EEPROM is used for storing the system and tuning parameters, user settings and selections, a scratch pad and a short code memory. The EEPROM size is 64kbits (8kx8bit).
NSE–3 PAMS System Module Technical Documentation MCU Memory Map MAD2 supports maximum of 4GB internal and 4MB external address space. External memories use address lines MCUAd0 to MCUAd21 and 16–bit databus. The BUSC bus controller supports 8– and 16–bit access for byte, double byte, word and double word data. Access wait state 2 and used databus width can be selected separately for each memory block.
PAMS NSE–3 System Module Technical Documentation Infrared Transceiver Module The module is activated with an IRON signal by the MAD, which supplies power to the module. The IR datalines are connected to the MAD accessory interface AccIf via FBUS. The RX and TX lines are separated from FBUS by three–state buffers, when the IR–module is switched off. The AccIf in MAD performs pulse encoding and shaping for transmitted data and detection and decoding for received data pulses.
NSE–3 PAMS System Module Technical Documentation RTC backup battery charging CHAPS has a current limited voltage regulator for charging a backup battery. The regulator derives its power from VOUT so that charging can take place without the need to connect a charger.
PAMS NSE–3 System Module Technical Documentation IBI Accessories All accessories which can be connected between the transceiver and the battery or which itself contain the battery, are called IBI accessories. Either the phone or the IBI accessory can turn the other on, but both possibilities are not allowed in the same accessory. Phone Power–on by IBI IBI accessory can power the phone on by pulling the BTEMP line up to 3 V.
NSE–3 PAMS System Module Technical Documentation RF Module Maximum Ratings Parameter Rating Battery voltage, idle mode 6.0 V Battery voltage during call, highest power level 5.0 V Regulated supply voltage 2.8 +/– 3% V Voltage reference 1.5 +/– 1.5% V Operating temperature range –10...+55 deg.
1.35 A PA TXP VXOENA PAMS VBATT Technical Documentation BATTERY Power Distribution Diagram Original 11/97 3.6 V SYNPWR RXPWR TXPWR VR 1 VR 2 VR 3 VR 4 VR 5 VR 6 VR 7 VREF V5V 90 mA 2.3 mA 18 mA VCTCXO BUFFER 0.1 mA VXO VSYN_2 51 mA VTX VCOs BUFFERS VSYN_1 COBBA ANAL. 1 mA CHARGE PUMPs VCP NSE–3 Page 3 – 49 CRFU, PLUSSA VRX 19.
NSE–3 PAMS System Module Technical Documentation DC Characteristics Regulators Transceiver has got a multi function power management IC, which contains among other functions, also 7 pcs of 2.8 V regulators. All regulators can be controlled individually with 2.8 V logic directly or through control register. In GSM direct controls are used to get fast switching, because regulators are used to enable RF–functions. Use of the regulators can be seen in the power distribution diagram. CCONT also provides 1.
PAMS NSE–3 System Module Technical Documentation UHF PLL is located into PLUSSA. There is 64/65 (P/P+1) prescaler, N– and A–divider, reference divider, phase detector and charge pump for the external loop filter. UHF local signal is generated by a VCO–module (VCO = voltage controlled oscillator ) and sample of frequency of VCO is fed to prescaler. Prescaler is a dual modulus divider. Output of the prescaler is fed to N– and A–divider, which produce the input to phase detector.
NSE–3 PAMS System Module Technical Documentation Receiver Receiver is a dual conversion linear receiver. Received RF–signal from the antenna is fed via the duplex filter to LNA (low noise amplifier ) in CRFU_1a. Active parts ( RF–transistor and biasing and AGC–step circuitry ) are integrated into this chip. Input and output matching networks are external. Gain selection is done with PDATA0 control. Gain step in LNA is activated when RF–level in antenna is about –45 dBm.
PAMS NSE–3 Technical Documentation System Module Transmitter Transmitter chain consists of IQ–modulator, upconversion mixer, power amplifier and there is a power control loop. I– and Q–signals are generated by baseband also in COBBA–ASIC. After post filtering ( RC–network ) they go into IQ–modulator in PLUSSA. It generates modulated TX IF–frequency, which is VHF–synthesizer output divided by two, meaning 116 MHz. There is also an AGC–amplifier in PLUSSA, but it is not used in GSM.
NSE–3 PAMS System Module Technical Documentation This detected voltage is compared in the error–amplifier in PLUSSA to TXC–voltage, which is generated by DA–converter in COBBA. Because also gain control characteristics in PA are linear in absolute scale, control loop defines a voltage loop, when closed. Closed loop tracks the TXC– voltage quite linearilly. TXC has got a raised cosine form ( cos4 – function ), which reduces switching transients, when pulsing power up and down.
PAMS NSE–3 Technical Documentation System Module AGC strategy AGC–amplifier is used to maintain output level of the receiver almost constant. AGC has to be set before each received burst, this is called pre–monitoring. Receiver is switched on roughly 150 ms before the burst begins, DSP measures received signal level and adjusts RXC, which controls RX AGC–amplifier or it switches off the LNA with PDATA0 control line. This pre–monitoring is done in three phases and this sets the settling times for RX AGC.
NSE–3 PAMS System Module Technical Documentation AFC function AFC is used to lock the transceivers clock to frequency of the base station. AFC–voltage is generated in COBBA with 11 bit AD–converter. There is a RC–filter in AFC control line to reduce the noise from the converter. Settling time requirement for the RC–network comes from signalling, how often PSW ( pure sine wave ) slots occur. They are repeated after 10 frames , meaning that there is PSW in every 46 ms.
PAMS NSE–3 System Module Technical Documentation Transmitter Blocks TX interstage filter Parameter Min. Typ. Passband Max. Unit 890 – 915 Insertion loss MHz 3.8 dB Power amplifier MMIC Parameter Symbol Test condition Min Operating freq. range Supply voltage Typ 880 Vcc 3.1 Gain control range ( overall dynamic range) Vpc= 0.5 ... 2.2 V 3.5 Max Unit 915 MHz 5.0 V 45 dB Synthesizer blocks VHF VCO and low pass filter Parameter Supply voltage range Min. Typ. Max. 2.7 2.8 2.
NSE–3 PAMS System Module Technical Documentation UHF VCO module Parameter Conditions Rating Supply voltage, Vcc Unit/ Notes 2.8 +/– 0.1 V Supply current, Icc Vcc = 2.8 V, Vc= 2.25 V < 10 mA Control voltage, Vc Vcc = 2.8 V 0.8... 3.7 V Oscillation frequency Vcc = 2.8 V Vc = 0.8 V Vc = 3.7 V < 1006 > 1031 MHz MHz f = 1018.5 MHz 2.25 +/– 0.25 V Tuning voltage in center frequency Tuning voltage sensitivity in operating frequency range on each spot freq. Vcc = 2.8 V f=1006...
PAMS NSE–3 System Module Technical Documentation Signal name SYNP WR RXPW R TXPW R From MAD MAD MAD To CCONT CCONT CCONT Parameter Minimum Typical Maximum Unit Function Logic high ”1” 2.0 2.85 V VR3, VR4 in CCONT ON Logic low ”0” 0 0.8 V VR3,VR4 in CCONT OFF Logic high ”1” 2.0 2.85 V VR2, VR5 in CCONT ON Logic low ”0” 0 0.8 V VR2, VR5 in CCONT OFF Logic high ”1” 2.0 2.85 V VR7 in CCONT ON Logic low ”0” 0 0.8 V VR7 in CCONT OFF VREF CCON T PLUSSA Voltage 1.
NSE–3 PAMS System Module Signal name TXP From MAD Technical Documentation To Parameter PLUSSA Logic high ”1” Logic low ”0” TXC RXC COBBA COBBA Page 3 – 60 Minimum Typical Maximum Unit 2.0 2.85 V 0 0.8 V PLUSSA Voltage Min 0.12 0.18 V Voltage Max 2.27 2.33 V PLUSSA Voltage Min 0.12 0.18 V Voltage Max 2.27 2.
PAMS NSE–3 System Module Technical Documentation Timings Synthesizer control timing 6.9 ms ( 1.5 x 4.6 ms ( frame ) 100 us min. 10 us min. 10 us min. 10 us min. 10 us min. 8 us RXPWR SYNTHPWR 2us min SENA SDATA/ SCLK #bits MODE VHF R VHF N/A UHF R UHF N/A 23 23 23 23 23 Synthesizer Start–up Timing / clocking MON 20 ms VXOENA SYNTHPWR RX MON RX MON 4.6 ms RX MON RX 0.5–2 sec. 6.
NSE–3 PAMS System Module Technical Documentation In case of long list of adjacent channels, there might be two monitoring– bursts/frame. Extra monitoring ”replaces” TX–burst. MON 20 ms VXOENA SYNTHPWR RX MON MON RX MON MON RX MON MON RX 0.5–2 sec. 4.6 ms 6.
PAMS NSE–3 System Module Technical Documentation Transmitter power switching timing diagram 542.8 us Pout 8.3..56.7 us TXC TXP 0...56.7 us 0...58 us TXPWR 150 us 50 us Synthesizer clocking Synthesizers are controlled via serial control bus, which consists of SDATA, SCLK and SENA1 signals. These lines form a synchronous data transfer line. SDATA is for the data bits, SCLK is 3.25 MHz clock and SENA1 is latch enable, which stores the data into counters or registers.
NSE–3 PAMS System Module Technical Documentation Block Diagram of Baseband Blocks BB RF REGULATORS REGULATORS CHARGER CHAPS N101 32 kHz CRYSTAL CCONT N100 CHR_CONTR SO16 VBATT SIM READER X302 SIMCARD 3...0 A/D CONV. BACK UP BATTERY UI BOARD SQFP64 PwrOnX SIMIF 4...0 CNTVR 4...0 G100 X300 DISPLAY GenSIO,LCDEn,CCONTCSX 32 kHz BUZZER EEPROM KBLIGHTS 2k*8 / 8k*8 SIO D230/240 SO8 MAD2 KEYBOARD D200 FLASH RF UNIT ROW 5...0 MCUDa 15...0 512k*16 1024k*16 COL 4...
PAMS NSE–3 System Module Technical Documentation Parts list of UP8T (EDMS Issue 11.
NSE–3 PAMS System Module R307 R308 R309 R401 R402 R403 R404 R405 R406 R500 R501 R502 R504 R507 R530 R531 R533 R550 R551 R552 R553 R554 R555 R580 R581 R582 R584 R585 R586 R588 R589 R600 R620 R621 R622 R623 R624 R625 R626 R627 R628 R629 R630 R631 R632 R634 R635 1620031 1430754 1620031 1430778 1430754 1430693 1430693 1430693 1430693 1430700 1430700 1430764 1620019 1430740 1430700 1430762 1430796 1430752 1430740 1430740 1430774 1430770 1430726 1430706 1430832 1430762 1430780 1430774 1430738 1430744 1430710
PAMS NSE–3 System Module Technical Documentation R636 R638 R640 R641 R660 R662 R664 R666 R668 R670 R706 R708 R710 C100 C101 C102 C103 C104 C105 C106 C107 C108 C109 C110 C112 C113 C114 C115 C116 C117 C118 C119 C120 C121 C122 C127 C128 C129 C130 C131 C132 C133 C140 C141 C142 C143 C160 1430848 1430848 1430734 1820031 1430726 1430714 1430764 1430770 1430732 1430726 1430812 1430762 1430762 2610003 2320548 2320538 2604127 2320131 2610003 2312401 2312401 2312401 2320544 2320544 2320544 2320508 2320546 2320620
NSE–3 PAMS System Module C161 C201 C202 C203 C204 C205 C206 C207 C208 C209 C211 C212 C213 C221 C231 C247 C248 C249 C251 C252 C253 C254 C255 C256 C257 C258 C260 C261 C262 C263 C266 C268 C269 C271 C272 C301 C302 C303 C304 C305 C306 C307 C308 C309 C310 C311 C312 2320546 2320620 2320620 2320620 2320620 2320620 2320620 2320620 2320620 2320620 2320620 2312401 2320584 2320620 2320620 2320620 2320620 2320620 2320620 2312296 2320131 2312401 2312401 2312296 2320131 2320131 2312401 2310784 2320131 2320131 2610003
PAMS NSE–3 System Module Technical Documentation C313 C400 C401 C402 C403 C404 C405 C500 C501 C502 C504 C505 C506 C507 C511 C512 C513 C514 C515 C516 C518 C520 C530 C531 C532 C535 C540 C550 C553 C554 C555 C559 C562 C563 C564 C565 C566 C567 C568 C570 C571 C572 C574 C575 C576 C582 C583 2320546 2312401 2312401 2320544 2320544 2320544 2310784 2320530 2320546 2320620 2320534 2320550 2320544 2320550 2320546 2320560 2312401 2320540 2320560 2320530 2320532 2320602 2312401 2320546 2320554 2310181 2312401 2320546
NSE–3 PAMS System Module C585 C586 C587 C588 C590 C592 C600 C601 C602 C603 C604 C610 C611 C612 C613 C614 C621 C622 C623 C624 C627 C630 C632 C633 C635 C636 C638 C639 C640 C641 C642 C643 C644 C649 C652 C653 C655 C656 C660 C662 C695 C700 L103 L104 L105 L106 L107 2320560 2320540 2310248 2320546 2312401 2610003 2312401 2320584 2320620 2320584 2312401 2610013 2610013 2610013 2320538 2320526 2320534 2320514 2320534 2320546 2320738 2320546 2320530 2320532 2320560 2312401 2320552 2320592 2310784 2310784 2320552
PAMS NSE–3 Technical Documentation L108 L400 L500 L501 L550 L552 L554 L580 L581 L600 3640035 3640035 3643039 3643039 3640069 3645157 3645157 3645161 3643025 3641206 Filt z>450r/100m 0r7max 0.2a 0603 Filt z>450r/100m 0r7max 0.
NSE–3 PAMS System Module N620 S301 S302 X100 X101 X102 X300 X302 X540 A500 A510 4370273 5219005 5219005 5469061 5469069 5469069 5460021 5400085 5429007 9517012 9517013 9380753 9850051 9850051 Page 3 – 72 Technical Documentation Plussa txmod+rxif+2pll tqfp64 TQFP64 IC, SWsp–no 30vdc 50ma smSW TACT SMD IC, SWsp–no 30vdc 50ma smSW TACT SMD SM, system conn 6af+3dc+mic+jack SM, batt conn 2pol spr p3.5 100v 100V2A SM, batt conn 2pol spr p3.5 100v 100V2A SM, conn 2x14m spring p1.
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