Programmes After Market Services NME–3 Series Transceivers Technical Information Issue 1 10/99
NME–3 Technical Information PAMS Technical Documentation CONTENTS Page No Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Powerdown Mode: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Idle Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . normal mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NME–3 PAMS Technical Documentation Technical Information Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Receiver Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Receiver Module Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transmitter Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sub Block Description/Tables . . . . . . . . . . . . . . . . . . . .
NME–3 Technical Information PAMS Technical Documentation A3 Schematics/Layouts Radio Unit GM8B_06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A–1 – A20 Handset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A–21– A28 Radio Unit GM8B_07 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NME–3 PAMS Technical Documentation Technical Information Introduction The CD949 has 3 Basic Operating Modes, divided into submodes: Powerdown Mode: In powerdown mode the complete system is switched off, it is not in service and consumes a minimum of current. Idle Mode normal mode In idle mode the phone is switched on and in service (if inside network coverage). timer mode When Ignition is switched off the phone goes in to timermode.
PAMS NME–3 Technical Information Technical Documentation Power Distribution Power is supplied to the system via the System–Cable or SCM5 (longer one). The Figure below shows an overview of Power Supply and Protection Circuits Si Switch Carbat+ Carbat– 12V Supply Aux Protect LineFilter TVS PowerOn 8V Regulator 8V Supply Post–Regulator / LoPower Bypass 3.8V Supply & Supply Monitor LoPower Regulator Feedback _OVERVOLTAGE _POWERFAIL _POWERCRITICAL Figure 1. Power Supply Block Diagram Table 1.
NME–3 PAMS Technical Documentation Technical Information Table 2. External Signals Pin / Conn. Line Symbol Minimum Typical / Nominal Maximum Unit / Notes 11/System Ignition 9 0 13.5 16 0.6 V / ON V / OFF 3/System Backlightdimming 9 13% 60 13.5 16 100% 100 V / High voltage % / Duty Cycle Hz / Frequency 4/System Antenna motor control V–BATT–1 VBATT 0.3 100 V / ON V / OFF mA/ Current 20/System Car radio mute 0.
PAMS NME–3 Technical Information Technical Documentation Table 2. External Signals (continued) Pin / Conn. Line Symbol Minimum Typical / Nominal Maximum Unit / Notes 7/Data RTS +/– 3.3 +/– 15 V / inactive V/ active 8/Data CTS +/– 3.3 +/– 15 V / inactive V/ active 9/Data RI +/– 3.3 +/– 15 V / inactive V/ active Protection Circuits Power is first filtered and protected agains Voltages>30V and Reverse Voltage.
NME–3 PAMS Technical Documentation Technical Information Power Supply – Handset Power is supplied to the HS via cable from RU. The Figure below shows an overview of Power Supply and Reset Circuits. 8V Backlightdiming 8V LineFilter GND 5V Audio FILTER 5V Digital 5V Regulator RESET Generator Supply Monitor 3V Regulator _RESOUT 3V SUPPLOWINT Figure 2.
PAMS NME–3 Technical Information Technical Documentation External Signals and Connections CD949 has three external connectors: – System Connector – Data Connector – RF Connector System Connector Table 3. External Signals Pin / Conn. Line Symbol Minimum Typical / Nominal Maximum Unit / Notes 19/System Ignition 9 0 13.5 16 0 V / ON V / OFF 3/System Backlightdimming 9 13% 60 13.5 16 100% 100 V / High voltage % / Duty Cycle Hz / Frequency 4/System Antenna motor con- 9 trol VBATT 0.
NME–3 PAMS Technical Documentation Technical Information Data Connector The CD949 transceiver unit GM8B has 3 digital interfaces between the MAD and external devices. These are the data or RS232 interface, to use the transceiver as modem. The handset interface used for communication between the radiounit and the handset, and the Test and Flash interface, needed for production and after sales purposes. All of these interfaces are implemented using the M– and F–Bus coming from the MAD. Table 4.
PAMS NME–3 Technical Information Technical Documentation SIM Connector RU Table 5. SIM–Card interface Pin Line Symbol Minimum 1 VCC 2 Reset Typical / Nominal Maximum Unit / Notes 4.5 2.7 5.5 3.3 10 6 V / supply voltage for 5V cards V / supply voltage for 3V cards mA / supply current for 5V cards mA / supply current for 3V cards 0 4.3 0.6 VCC 400 0.6 3 400 0 2.4 3 CLK 0 3.5 0 2.1 45 1 3.25 0.5 5 0.
NME–3 PAMS Technical Documentation Technical Information Table 5. SIM–Card interface (continued) Pin Line Symbol Minimum 6 VPP 4.5 5.5 2.7 3.3 –0.3 3.5 0 3.8 –0.3 2.1 0 2.1 0.8 5.3 0.4 5 0.6 3.3 0.4 3 1 1 7 I/O 8 N.
PAMS NME–3 Technical Information Technical Documentation SIM Connector HS Table 6. SIM–Card interface Pin Line Symbol Minimum Typical / Nominal 1 VCC 4.5 2.7 5.5 3.3 10 6 V / supply voltage for 5V cards V / supply voltage for 3V cards mA / supply current for 5V cards mA / supply current for 3V cards 2 Reset 0 4.3 0.6 VCC 400 0.
NME–3 PAMS Technical Documentation Technical Information Internal Signals and Connections LAPTOP Transceiver SIM Reader RS 232 Driver DCT 3 Audio circuits Engine RFPART Power supply HSIF VDA signals Antenna Battery Car Data IF Ignition CRM AMC BackLD HF Microphone Audio Power supply HF Loudspeaker SIM Reader Cradle MCU Carradio Lineout Key board Display Figure 3.
PAMS NME–3 Technical Information Technical Documentation Transceiver DSUB 9 Antenna RF–part RS 232 Levelshifter F–Bus LNA GenIO Flash RAM EEPROM Rx Tx Duplexfilter PA MAD2 CRFU 1A SIM Reader UHF VCO CCONT VHF VCO VDA signals Powersupply Synth IQ VCTCXO M–Bus CRM A COBBA Handset audio interface Backld Ignition Car bat M C HF preamplifier Line Drive r Test– Flash IF HFMicrophone Loudspeaker Lineout Cradle Handset Power supply Earpiece amp Mic–amp PA Display SIM Reader MCU Il
NME–3 PAMS Technical Documentation Technical Information Row 0..4 RS232 Level shifter Col 0..4 Data connector MAD F–Bus Rx & System connector F–Bus Tx M–Bus Flash/Test equipment Handset Figure 5. Digital interface in GM8B SYS Conn Block Conections Audio Block Connections The Cobba has to functions AD/DA converters for the RF–BB interface. Codecs for the Audio interface. The RF–BB interface is used implemented in the same way it is implemented in HD940.
PAMS NME–3 Technical Information Technical Documentation Table 7. Audio levels for HS Signal name Nominal value Maximum value Notes HS EARP/EARN 17,5 mVRMS 501 mVRMS This is the balanced signal level at the HS HS MICP/MICN 87 mVRMS 790 mVRMS This is the balanced signal level at the HS/ RU Cobba Handset Radio Unit Figure 6.
NME–3 PAMS Technical Documentation Technical Information Handsfree Audio Path Sending (SLR=8dB) Networklevel after DSP correction: nom: –16dBm0 max: +3,14dBm0 DSP 0dB @ 1kHz Serial Interface 13 bit ADC 6,14 dBm0 @ 0dBV 8kHz // 13 bit parallel nom: –16dBm0 max: +3,14dBm0 nom: 78mV max: 707mV Phone Unit –11,3dBm0/Pa @ 1kHz from MRP to Network 0–22,5 dB in 1,5dB steps 2nd order 300Hz highpass filter 0dB @ 1KHz 5th order 3kHz elyptic lowpass filter 0dB @ 1kHz 15dB anti–aliasing prefilter 0dB Mic
PAMS NME–3 Technical Information Technical Documentation Handset Audio Path Sending (SLR=8dB) Phone Unit Networklevel after DSP correction: nom: –16dBm0 max: +3,14dBm0 DSP 0dB @ 1kHz –11,3dBm0/Pa @ 1kHz from MRP to Network 20–42,5 dB in 1,5dB steps Serial Interface 13 bit ADC 6,14 dBm0 @ 0dBV 8kHz // 13 bit parallel nom: –16dBm0 max: +3,14dBm0 nom: 78mV max: 707mV 2nd order 300Hz highpass filter 0dB @ 1KHz 5th order 3kHz elyptic lowpass filter 0dB @ 1kHz 29dB Fix20dB+ VAR9dB anti–aliasing pr
NME–3 PAMS Technical Documentation Technical Information Handsfree Loudspeaker According to VDA at has to be suitable to drive 4W Loudspeakers with a maximumpower of 5W. When checking the offical requirements for the response of the loudspeakerpart, we see that we need to have at 1,5W Audiopower , if the sensitivity is as specified in CD949 acoustical components. We are using a bridged Audio Amp. The requirements for the Loudspeaker are shown below: Table 8.
PAMS NME–3 Technical Information Technical Documentation Table 9. Specification for Microphone interface Parameter Value Notes Bias voltage 8V +– 10% <10 mV ripple max Bias source impedance >300 W Load resistance >10 kW AF level 190 mVpp at 1khz P=74 dB >1% distortion 15 dB dynamic range The specifications for the line out is that it will be a balanced driver with the capability of driving high capacitance loads, which are results of long cables and EMC filtering.
NME–3 PAMS Technical Documentation Technical Information Table 11. AC and DC Characteristics of RF baseband signals (continued) Signal name VXO VSYN VVCO VCP V8PA From CCONT ((VR1)) To Parameter Minimum VCTCXO Voltage ((2mA), ), Buffer Current (5mA) 2.7 Voltage 2.7 PLUSSA (19mA) CCONT (VR4) UHFVCO Voltage (10mA), VHFVCO ((5mA), ), CRFU1a Current (7mA), buffer (10mA) 2.7 4.8 Current PLUSSA Charge Pumps Voltage VBBDIG Logic circuits PA Voltage VXOPW R SYNPW R Current 2.85 2.
PAMS NME–3 Technical Information Technical Documentation Table 11. AC and DC Characteristics of RF baseband signals (continued) Signal name PDATA0 From MAD To LNA Parameter Minimum Typical SDATA MAD MAD PLUSSA PLUSSA MAD PLUSSA 2.85 V Nominal gain in LNA Logic low ”0” 0 0.8 V Reduced gain in LNA 0.1 mA Logic high ”1” 2.0 2.85 V Logic low ”0” 0 0.8 V Current 50 uA Load capacitance 10 pF Logic high ”1” 2.0 2.85 V Logic low ”0” 0 0.
NME–3 PAMS Technical Documentation Technical Information Table 11. AC and DC Characteristics of RF baseband signals (continued) Signal name TXIP/ TXIN From COBBA To Parameter Minimum PLUSSA Differential voltage swing 1.022 1.1 1.18 Vpp DC level 0.784 0.8 0.816 V Differential offset voltage (corrected) +/– 2.0 mV Diff. offset voltage temp. dependence +/– 1.
PAMS NME–3 Technical Information Technical Documentation Table 11. AC and DC Characteristics of RF baseband signals (continued) Signal name TXC From COBBA To PLUSSA Parameter Minimum 0.18 V Voltage Max 2.27 2.33 V Vout temperature dependence 10 LSB Source impedance active state 200 ohm high Z 10 pF Settling time 10 us Noise level 500 uVrms 10 +/–0.9 LSB INL +/– 4 LSB Timing inaccuracy 1 us Voltage Min 0.12 0.18 V Voltage Max 2.27 2.
NME–3 PAMS Technical Documentation Technical Information Transceiver (NME–3) Baseband This chapter of the document describes the baseband module of the DCT3 engine used in CD949. The Baseband architecture is basically similar to DCT2 GSM phones. The DCT3 differs from DCT2 in the integration level of the baseband. In DCT3 the MCU, the system specific ASIC and the DSP are integrated in one ASIC called MAD. This chip takes care of all the signal processing and operation controlling tasks of the phone.
PAMS NME–3 Technical Information Technical Documentation – DSP memory – BUSC (Bus Controller for controlling accesses from ARM to API, System logic and MCU externel Memory, both 8– and 16 bit memories) – System Logic – CTSI (Clock, Timing, Sleep and Interrpt control) RFIClk RFIWrX t WSLH t WSHL RFIAD(3:0) t WASU t WAHD t WDSU t WDHD RFIDA(11:0) Figure 9. Write cycle timing. Table 12.
NME–3 PAMS Technical Documentation Operating mode Vref Technical Information RF REG Power off Off Off VCOBBA Off VBB VSIM SIMIF Power on On On/Off On On On On/Off Reset On Off VR1 On On On Off Pull down Sleep On Off Off On On On/Off Off Off Pull down Note: COBBA regulator is off in SLEEP mode. Its output pin may be fed from VBB in SLEEP mode by setting bit RFReg(5) to ’1’ (default). CCONT includes also five additional 2.8V regulators providing power to the RF section.
PAMS NME–3 Technical Information Characteristics Technical Documentation Condition Min Typ Max Unit Output current VR1–VR6 Vout@2.8V 100 mA Output current VR7 Vout@2.8V Depends on external BJT 150 mA Output current VR7BASE Base current limit Vout@2.8V –10 mA Output current VBB On Current limit 250mA Output current VBB Sleep Current limit 5mA Vout@2.8V 125 mA Vout@2.8V 1 mA Output voltage VR1–VR7 over full temperature, input voltage and load range 2.7 2.8 2.
NME–3 PAMS Technical Documentation Technical Information Switching SIM power supply There is a switched mode supply for the SIM–interface. SIM voltage is selected via serial IO. The 5V SMR can be switched on independently of the SIM voltage selection, but can’t be switched off when VSIM voltage value is set to 5V. Characteristics Condition Min Typ Max Unit Output current VR1–VR6 Vout@2.8V 100 mA Output current VR7 Vout@2.
NME–3 Technical Information PAMS Technical Documentation 1. Ignition gets High 2. The Powerbuttom is pressed 3. The Supplyvoltage comes up from below 3.8V 4. PURX gets low caused by softwarecrash Handset interface The handset interface is implemented using the M–Bus. M–Bus is used for Test puposes as well, but since M–Bus is a multipointbus there is no problem in using M–Bus for multiple purposes. For Test and Flash purposes F– and M–Bus are directly connected from the MAD to the systemconnector.
NME–3 PAMS Technical Documentation Technical Information Description of gm8b Powerup/Powerdown behaviour In a carphone there are 2 sources that wakeup the system in a normal situation: 1. Ignition is turned on 2. The User presses the Powerbutton In both situations the phone has to stay in Power On status as long as the Userpresses the Powerbutton again or Ignition is turned OFF.
PAMS NME–3 Technical Information Technical Documentation Wakeupevent (IGNS/Powerbutton) PowerOnX 200mS 200us PURX 50mS Powerdown Figure 11. unvalid wakeup (ignored) PURX 50mS PowerOnX 200mS 200us Powerdown Figure 12.
NME–3 PAMS Technical Documentation Technical Information PURX PowerOnX Powerdown Figure 13. regular Shutdown Description of the Brownout circuit The CD949 transceiver is permanently connected to the Car battery which has a nominal level of 13.5 V. Since there are some systems in a car like ignition or electirical motors, it happens frequently that the voltage drops below 4V or even down to 0V, for times up to several seconds.
NME–3 Technical Information PAMS Technical Documentation VBAT VBCCONT VBB Powercritical PowerOnX Brownoutdet Brownoutreset EEPROMACCESS Figure 14. Brownout procedure total powerdrop VDA Car Signals Ignition sense For GM8B, Ignition sense is an Input. This signal is turned high when the cars ignition is turned on, and low when the ignition is turned off again.
NME–3 PAMS Technical Documentation Technical Information Table 13. Ignition sense Parameter max typ 13,5 V min active voltage Ignition ON 16 V inactive voltage Ignition OFF 0,3 V 0V Current taken from this signal 1 mA 10mA Notes 9V Maximum voltage in Fault condi- 28 V tion 80V for up to 60s for 500mS Implementation The Ignition sense Input is limited to 2.8V via an Resistor/ Z–Diode combination.
PAMS NME–3 Technical Information Technical Documentation Backlight Dimming The Backlight dimming is used to synchronise the dimming of all backlights inside the cars cockpit. The Backlightdimming signal is a PWM modulated signal that is delivered from the car to the GM8B. Table 16.
NME–3 PAMS Technical Documentation Technical Information RF Table 17. Main RF characteristics Item Values Receive frequency range 935 ... 960 MHz Transmit frequency range 890 ... 915 MHz Duplex spacing 45 MHz Channel spacing 200 kHz Number of RF channels 124 (+50) Power class 2 (39 dBm) Number of power levels 18 Maximum Ratings Nominal PA voltage: Lower extreme supply PA voltage: Higher extreme supply PA voltage: 13.5V 10.5V 16.
PAMS NME–3 Technical Information Technical Documentation 12 V BATTERY VBATT 3,15 A PA TXP V8PA VBBDIG VXOENA SYNPWR RXPWR TXPWR VR 1 VR 3 VR 4 VR 5 VR 6 7mA VCTCXO VXO 10 mA 30 mA LO Buffer TX Buffer VR 2 PA control circuits VR 7 19mA 0mA PLUSSA PLLs RX VSYN (VRX) 72mA 32mA COBBA CRFU RX VCOs ANAL. VVCO VCOBBA VRX VREF V5V 0,1mA PLUSSA CRFU VREF 72mA 4mA PLUSSA CHARGE CRFU TX PUMPs VTX VCP Figure 15. Power distribution diagram Control Signals Table 18.
NME–3 PAMS Technical Documentation Technical Information Table 19. List of supply voltages (continued) Regulator in CCONT Name of supply Load Current consumption VR 4 VVCO UHFVCO VHFVCO CRFU 1a 10 mA 5 mA 7 mA VR 5 VRX2 Plussa RX path max.
PAMS NME–3 Technical Information Technical Documentation PDATA0 LNA Int ers tag e Fil ter LNA Mixer 23 10 IF A M P 7 mA 82 mA 19 mA 32 mA 0 mA VCP 13MHz VTX 72 mA VREF V8PA VPA 9 Mixer 25 VXO VRX VSYN VVCO (VRX) 8 71MHz 7 21, 22 24, 27 Analog RX AGC RF V C O Bu ffe r :2 58Mhz te m p co m p :4 116MHz Out 232MHz 935–960MHz Out In C ha rg eP u m p C ha rg eP u m p IN 1006–1031 VHF Prescaler 890–915MHz UHF Prescaler VR1 VR2 VR3 VR4 VR5 V5V VR7 4 mA VREF 100 uA VXOENA SYNPW
NME–3 PAMS Technical Documentation Technical Information Receiver The transceiver uses a dual conversion linear receiver. The received signal from the antenna is fed via the duplex filter to a discrete LNA ( low noise amplifier ) which uses a BFP420 transistor. The LNA can be switched between two gain settings in order to increase the dynamic range of the receiver. Switching of the LNA is controlled using the PDATA0 line from MAD using a discrete transistor network.
NME–3 Technical Information PAMS Technical Documentation Transmitter The transmitter chain contains an IQ–modulator, an upconversion mixer, a power amplifier and a power control loop. The I and Q signals are generated by the DACs in COBBA in the BB section, post filtered (RC–network) and fed into the PLUSSA IQ modulator. The modulated IF signal from this modulator is centered at 116MHz (this is the VHF synthesizer frequency divided by two (232MHz)).
NME–3 PAMS Technical Documentation Technical Information The phase detector compares this signal with the reference signal divided by the reference divider from the VCTCXO. The error signal generated by the phase detector drives the charge pumps. The current pulses generated by the charge pumps are integrated by the loop filter to produce a control voltage for the UHF VCO. The settling time of the synthesizer is defined by the loop filter component values.
PAMS NME–3 Technical Information Technical Documentation Table 20. Receiver characteristics (continued) Item Values Typical AGC step in LNA approx. 45 dB Usable input dynamic range –104 ... –10 dBm RSSI dynamic range –112 ... –48 dBm AGC relative accuracy on channel ( accurate range ) +/– 0.8 dB Compensated gain variation in receiving band +/– 1.0 dB Receiver Module Specification Duplex filter Table 21.
NME–3 PAMS Technical Documentation Technical Information Pre–amplifier Specifications The LNA is a discrete solution using a BFP420 as active component. Table 22. LNA requirements Parameter Min. Typ. Frequency band Max. Unit/Notes 935 – 960 Supply voltage 2.7 2.8 2.855 V 25 mA 20 21 dB 1.8 2.
PAMS NME–3 Technical Information Technical Documentation Diode Mixer Specification The 1st mixer will be a passive quad diode hybrid as it was used in CD745. Table 24. Mixer requirements Parameter Min. RX frequency range LO frequency range LO drive level Typ./ Nom. Max.
NME–3 PAMS Technical Documentation Technical Information Table 26. (continued) Electrical characteristics Parameter min. Bandwidth relative to 71 MHz 1 dB bandwidth 3 dB bandwidth 5 dB bandwidth 22 dB bandwidth 30 dB bandwidth 40 dB bandwidth typ. max.
PAMS NME–3 Technical Information Technical Documentation Table 28. 2nd IF–filter connected to PLUSSA Parameter min. Center frequency, fo typ. max. unit 13 1 dB bandwidth, 1 dBBW ( relative to 13 MHz ) MHz +/– 90 kHz Insertion loss 8.0 dB Amplitude ripple at 1 dBBW 1.0 dB Group delay ripple at 1 dB BW, peak to peak 1.5 us Attenuations, relative to 13 MHz fo +/– 400 kHz fo +/– 600 kHz fo +/– 800 kHz dB 25 35 35 Transmitter Characteristics RF Characteristics, Transmitter Table 29.
NME–3 PAMS Technical Documentation Technical Information Sub Block Description/Tables Electrical Specifications, CRFRT TX Section In the CD949 rf module the modulator is integrated into the DCT3 ASIC Plussa. Table 31. Requirements for IQ–modulator Parameter Min. Typ. Max. Unit 2.7 2.8 2.85 V 28 tbd. mA Typical / Nominal Maximum Unit / Notes Supply voltage Current consumption (VTX) Modulator Inputs (I/Q) Minimum Input bias current (balanced) 100 Input common mode voltage nA 0.
PAMS NME–3 Technical Information Technical Documentation Table 32. 116 MHz LC IF–filter, requirements Parameter Min. Typ. (continued) Max. Unit Relative attenuation @ +/– 20 MHz offset 8 dB Relative attenuation @ 232 MHz 15 dB Relative attenuation @ 348 MHz 20 dB Relative attenuation @ 464–1000 MHz 25 dB Input impedance, balanced 100 ohm Output impedance, balanced 200 ohm Mixer Specification Table 33.
NME–3 PAMS Technical Documentation Technical Information TX Filter Specifications Table 34. Specification TX interstage filter Parameter Min. Passband Typ. Max. Unit 890 – 915 MHz Insertion loss 3.5 dB Ripple in passband 1.5 dB Attenuation DC...813 MHz 30 dB Attenuation 925...935 MHz 4.5* dB Attenuation 935...960 MHz 5** dB Attenuation 1006...1031 MHz 40 dB Attenuation 1122...1147 MHz 30 dB Attenuation 1780...1830 MHz 10 dB Attenuation 2670...
PAMS NME–3 Technical Information Technical Documentation Table 35. Specification MosFet power amplifier Parameter Symbol (continued) Tamb = +25 deg. C, 50 ohms Test condition Min Typ Input matching Mag(S11) Max –9.5 Unit –6.0 dB Operating case temperature –30 +110 _C storage temperature –40 +110 _C 0 8 V APC voltage Vapc Duty cycle Pout=41.5dBm, VDD=10.5V Pin= 3 dBm, Tc=+25 deg.C 50 % Stability Load mismatch stress Pin= 3 dBm, VDD=12.
NME–3 PAMS Technical Documentation Technical Information Table 38. Dual range power control loop characteristics Parameter High power loop Low power loop Power level 2 ... 10 11 ... 19 DET voltage 200mV ... 1250mV 250mV ... 1580mV LOOP amplification factor 0.5 5 Bias voltage for PA 2V ... 7V 1.7V ... 2V Table 39. Dual range power control loop characteristics Parameter High power loop Low power loop Power level 2 ... 10 11 ... 19 DET voltage 200mV ... 1250mV 250mV ...
PAMS NME–3 Technical Information Technical Documentation Synthesizer VCTCXO Table 42. Electrical specifications Parameter Supply voltage, Vcc Min. Typ. Max 2.70 2.80 2.90 V 1.5 mA Current consumption, Icc Operating temperature range –30 Nominal frequency +85 13 Output voltage swing ( swing of 13 MHz component, selective measurement from the spectrum ) deg. C MHz 800 Load, resistance capacitance Unit/.Notes mVpp 2 10 kohm pF Frequency tolerance @+25 deg. C – 1.0 + 1.
NME–3 PAMS Technical Documentation Technical Information VHF VCO + Filter Table 43. VHF VCO requirements Parameter Supply voltage range Min. Typ. Max. 2.7 2.8 2.9 V 7 mA 4.0 V Current consumption Control voltage 0.5 Operation frequency Output level –13 Unit/Notes 232 MHz –10 dBm ( output after low pass filter ) Harmonics –30 dBc, ( filtered ) Phase noise, fo +/– 600 kHz fo +/– 1600 kHz fo +/– 3000 kHz –123 –133 –143 dBc/Hz 16.
PAMS NME–3 Technical Information Table 45. Technical Documentation (continued) UHF VCO module, Electrical specifications, Zo=50 ohm Parameter Conditions Tuning voltage in center frequency Rating f = 1013.5 MHz Unit/ Notes 2.25 +/– 0.25 V Tuning voltage sensitivity in operating frequency range on each spot freq. Vcc = 2.8 V f=1006...1031 MHz 16+/– 2 MHz/V Output power level Vcc=2.7 V f=1006...1031 MHz –6.0 min. dBm Output impedance and VSWR f=1006...
NME–3 PAMS Technical Documentation Table 47. Parameter Technical Information UHF local signal input in CRFU_1a Min. Typ. Max. Unit/Notes Input frequency range 990 1040 MHz Input level 200 700 mVpp Input resistance 100 Input capacitance ohm 1.5 pF PLL Circuit Table 48. UHF PLL block in PLUSSA, requirements Parameter Min. Input frequency range 650 Input signal level (f<1.5 GHz) 200 Input resistance 600 Typ. Max. 1700 Unit/notes MHz mVpp 700 Ohm Input capacitance 1.
NME–3 Technical Information PAMS Technical Documentation Handset (RTE–2HJ) Power up/Power down procedure HS This task is divided up between hard– and software to protect accidential power down of SIM. As long, ”+5V” is below 4.63V, Reset is active (active LOW, Net: _RESOUT), and min. 20msec after 4.63V was reached. After _RESET is high, software has to wait in a loop until Net: ”SUPPLYOK” goes high. This is at the point, where the Voltage supplied via Cable is over 7 Volt.
NME–3 PAMS Technical Documentation Technical Information 8V BLD 8V Power Supply 5V MCU 3V Memory Audio Keyboard SIM LCD Figure 19. Power distribution diagram Reset strategy is divided up between hard– and software to protect accidential power down of SIM. As long, ”+5V” is below 4.63V, Reset is active (active LOW, Net: _RESOUT), and min. 20msec after 4.63V was reached. After _RESET is high, software has to wait in a loop until Net: ”SUPPLYOK” goes high.
PAMS NME–3 Technical Information Technical Documentation External Signals and Connections The handset is connected via curly cord to the system cable and then to the RU. The curly cord uses an 10 pol western plug which will be connected to the system cable. HS Module Connector Table 49. Handset connector Pin Line Symbol 1 N.C. 2 MBUS Minimum Typical / Nominal Maximum Unit / Notes not connected / HS side =GND 0 2.0 0.8 2.
NME–3 PAMS Technical Documentation Technical Information LCD Module As display a passive, full dot matrix (48*84) Liquid Crystal Display module in foil compensated super twisted nematic technology with integrated driver from Phillips will be used. Size of the display is 39.5*34*3.5 mm. The LCD display is working with 3V instead of 5V for the MCU and therefore a level–shifter is needed between MCU and LCD display.
NME–3 Technical Information PAMS Technical Documentation Memory The HS has no external FLASH or MASK ROM memory on board so the ROM is limited to the 128k*8 of the MCU. External RAM (32k*8) is connected to the MCU.
NME–3 PAMS Technical Documentation Technical Information Cradle (CRD–8)) System Description The cradle can be used for left and right hand cars and will fit physically into the cars of MB, Audi and Ford. It will be used together with the Minna Handset and with the Dude Handset, both handsets having the same mechanical interface. The Minna HS has an emergency button; the Dude HS has no emergency button. Otherwise the HS’s are equal from the mechanical point of view.
PAMS NME–3 Technical Information No. Acc.
