User Guide

PAMS
Technical Documentation
NSE–8/9
System Module
Page 2– 61
Issue 1 07/99
Table 32. Flash programming, Vpp, properties
Parameter signal min typ max Unit Comment
Normal phone operation
Vpp 0 1.0 V HW protected against
programming
Ipp
leak
0.2 mA Max allowed leakage
current from Vpp pin
on flash for safe write
protection. Phone has
4k7 pull down resistor.
Aftersales programming
TDS–7 & MJS–13
Vpp 1.65 3.6 V Valid range to tell
FLASH to use Vbb as
programming supply
Ipp 0.05 0.1 mA Programming current
drawn from Vpp
Ibb 18 55 mA Programming current
drawn from Vbb
Production programming
Vpp 11.4 12.6 V
Programming current
dfV
”f
ast
pr
og
r
a
mmin
g
”
Ipp 8 22 mA
drawn
f
rom Vpp
fast
rogramming
Ibb 8 15 mA Programming current
drawn from Vbb
A 2.8V programming voltage is supplied from the Vbb, provided that Vpp
is in range. Otherwise the fast programming voltage must be supplied to
the pad, J105, in the service interface.
CCONT
CCONTMAD2PR1
SIM
GenSDIO
GenSClk
GenCCONTCSX
GenSIO_1
Data_in/out
GenSIO_0 Data_clk
CCONTCSX DataSELX
SIMCardIOC
SIMCardRstX
SIMIF_1
SIM_I/O_C
SIMIF_2 SIMRST_A
SIMIF_3 SIMclkSIMCardClk
SIMCardPwr
SIMIF_0
SIM_PWR
SIMIF_4 Data_ASIMCardData
PURX
VCXOPwr
PURX PURX
VCXOPWR SLEEPX
Clk32K SLEEPCLK SLClk
CCONTInt CCONTINT CCINTINT
SIMRST_O
SIMCLK_O
DATA_O
VSIM
TxPa TXP TXPWR
Figure 17. Digital Interface – CCONT and MAD2PR1